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    MOS TECHNOLOGY Search Results

    MOS TECHNOLOGY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
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    MOS TECHNOLOGY Price and Stock

    Microchip Technology Inc MO-9200AE-D3E-HE87M3515420

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MO-9200AE-D3E-HE87M3515420
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    Nexperia PSMN6R1-30YLDX

    MOSFETs N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOStechnology
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PSMN6R1-30YLDX Reel 4,500
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    • 10000 $0.17
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    Nexperia PSMN021-100YLX

    MOSFETs N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOStechnology
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    TTI PSMN021-100YLX Reel 3,000
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    • 10000 $0.343
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    Nexperia PSMN013-40VLDX

    MOSFETs N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOStechnology
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PSMN013-40VLDX Reel 3,000
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    • 10000 $0.353
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    Nexperia PSMN013-60HLX

    MOSFETs N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOStechnology
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PSMN013-60HLX Reel 1,500
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    MOS TECHNOLOGY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pa1556ah

    Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
    Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET


    Original     		O-251/-252, O-220/-262 SC-96 SC-95 SC-96 OT-23) D10702EJAV0PF00 pa1556ah PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326 PDF

    101490

    Abstract: P22n HM50464P-12 50464 ram
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY


    OCR Scan     		ADE-40 101490 P22n HM50464P-12 50464 ram PDF

    rca thyristor manual

    Abstract: HN623258 101490
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j


    OCR Scan     		PDF

    NE5500434

    Abstract: nec RF package SOT89 nec 2501
    Text: DATA SHEET SILICON POWER MOS FET NE5500434 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our MOS technology our 0.6 m WSi gate lateral MOS


    Original     		NE5500434 NE5500434 OT-89 nec RF package SOT89 nec 2501 PDF

    Untitled

    Abstract: No abstract text available
    Text: POWER MOS FET New-Product Lineup New-Product Series Our original technology has improved the performance of the conventional 7^MOS series. L2-;r-MOS IV, V Low-voltage Series •••Low-voltage drive (4V), ultralow on-resistance tt-MOS II*5, III'5, IV (High-voltage Series)*"Low on-resistance, large current, high voltage


    OCR Scan     		AC100V 5K1120 2SK1359 PDF

    power bjt advantages and disadvantages

    Abstract: advantages and disadvantages of cmos BJT Gate Drive circuit bjt advantages and disadvantages amplifier advantages and disadvantages linear cmos logic advantages of a bjt amplifier polysilicon resistor fabrication BJT amplifiers Cmos not gate high frequency
    Text: Silicon Gate CMOS Linear Technology Introduction Historically, MOS technology has been the domain of the digital designer. Analog designers might use MOS transistors for the input stage of a high input impedance operational amplifier or use discrete MOS transistors in


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet R2J20658BNP R07DS0550EJ0101 Previous No.: R07DS0542EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20658BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver


    Original     		R2J20658BNP R07DS0550EJ0101 R07DS0542EJ0100) R2J20658BNP PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet R2J20658BNP R07DS0550EJ0101 Previous No.: R07DS0542EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20658BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver


    Original     		R2J20658BNP R07DS0550EJ0101 R07DS0542EJ0100) R2J20658BNP PDF

    Untitled

    Abstract: No abstract text available
    Text: APT6015LVFR 600V POWER MOS V 38A 0.150W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6015LVFR O-264 O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT6011LVFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6011LVFR O-264 O-264 PDF

    Untitled

    Abstract: No abstract text available
    Text: NJU7043 Input/Output Full-Swing High Output Current Dual C-MOS Operational Amplifier •GNERAL DESCRIPTION The NJU7043 is a dual C-MOS operational amplifier permitting a full-swing input and output in under high load. Based on C-MOS technology, there are excellent features


    Original     		NJU7043 NJU7043 NJU7043D NJU7043M Isourse40mA Isink-40mA 10kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: NJU7043SCC Input/Output Full-Swing High Output Current Dual C-MOS Operational Amplifier •GENERAL DESCRIPTION The NJU7043 is a dual C-MOS operational amplifier permitting a full-swing input and output in under high load. Based on C-MOS technology, there are excellent features


    Original     		NJU7043SCC NJU7043 PCSP20â 10kHz PDF

    APT6015JVFR

    Abstract: No abstract text available
    Text: APT6015JVFR 600V POWER MOS V 35A 0.150W FREDFET S S ® Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS


    Original     		APT6015JVFR E145592 OT-227 APT6015JVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet R2J20655BNP R07DS0548EJ0101 Previous No.: R07DS0540EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver


    Original     		R2J20655BNP R07DS0548EJ0101 R07DS0540EJ0100) R2J20655BNP PDF

    APT10050LVR

    Abstract: No abstract text available
    Text: APT10050LVR 21A 0.500Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10050LVR O-264 O-264 APT10050LVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT1201R5BVR 1200V 10A 1.500Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1201R5BVR O-247 O-247 30TO-SOURCE PDF

    APT10086BVR

    Abstract: No abstract text available
    Text: APT10086BVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086BVR O-247 O-247 APT10086BVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT6025SVR 600V 25A 0.250W POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6025SVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT12045L2VFR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12045L2VFR O-264 O-264 PDF

    APT12080LVR

    Abstract: 1200v diode
    Text: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12080LVR O-264 O-264 APT12080LVR 1200v diode PDF

    APT1001RSVR

    Abstract: No abstract text available
    Text: APT1001RSVR 11A 1.000Ω 1000V POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		APT1001RSVR APT1001RSVR PDF

    fet series

    Abstract: fet book
    Text:  MOS FET Series .04'&5 1BOBTPOJD4FNJDPOEVDUPS%JTDSFUF%FWJDFT$P -UE 1BOBTPOJD.04'&5 Panasonic’s MOS FET Series open the new dimension of applications. Panasonic MOS FET series facilitate the industry-top-level process technology. Panasonic adds to a rich MOS FET portfolio which includes composite and high tolerance in smaller package types.


    Original     		A02006BE fet series fet book PDF

    Untitled

    Abstract: No abstract text available
    Text: APT6011B2VFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6011B2VFR MIL-STD-750 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10086SVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086SVR PDF