Pch MOS FET
Abstract: SSM6L05FU
Text: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance • Low gate threshold voltage Q1: Ron = 0.8 Ω max (@VGS = 4 V) Q2: Ron = 3.3 Ω (max) (@VGS = −4 V)
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SSM6L05FU
Pch MOS FET
SSM6L05FU
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mos fet marking k4
Abstract: Pch MOS FET SSM6L05FU
Text: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package · Low on resistance · Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω max (@VGS = 4 V) Q2: Ron = 3.3 Ω (max) (@VGS = −4 V)
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SSM6L05FU
mos fet marking k4
Pch MOS FET
SSM6L05FU
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Untitled
Abstract: No abstract text available
Text: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance • Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω max (@VGS = 4 V)
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SSM6L05FU
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PDF
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Untitled
Abstract: No abstract text available
Text: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance • Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω max (@VGS = 4 V)
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SSM6L05FU
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PDF
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Untitled
Abstract: No abstract text available
Text: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance • Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω max (@VGS = 4 V)
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SSM6L05FU
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SSM6L05FU
Abstract: k415
Text: SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications • Small package • Low on resistance • Low gate threshold voltage Unit: mm Q1: Ron = 0.8 Ω max (@VGS = 4 V)
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SSM6L05FU
SSM6L05FU
k415
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B0911
Abstract: DN2470
Text: DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features ► ► ► ► ► ► General Description The DN2470 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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DN2470
DSFP-DN2470
B091108
B0911
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Untitled
Abstract: No abstract text available
Text: Supertex inc. DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage The DN2470 is a low threshold depletion-mode normally-on
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DN2470
DN2470
DSFP-DN2470
B041311
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mos fet marking k4
Abstract: DN2470 125OC DN2470K4-G transistor MARKING K4 DMOS
Text: DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features ► ► ► ► ► ► General Description The DN2470 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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DN2470
DN2470
DSFP-DN2470
B103108
mos fet marking k4
125OC
DN2470K4-G
transistor MARKING K4
DMOS
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125OC
Abstract: DN2470 DN2470K4-G
Text: Supertex inc. DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
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DN2470
DN2470
DSFP-DN2470
B041311
125OC
DN2470K4-G
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Untitled
Abstract: No abstract text available
Text: Supertex inc. DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
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DN2470
DN2470
DSFP-DN2470
C062513
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2sk4075
Abstract: TRANSISTOR K4075 k4075 2sK4075 TRANSISTOR 2SK4075-ZK k407
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4075-ZK-E1-AY Pure Sn Tin
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2SK4075
2SK4075
2SK4075-ZK-E1-AY
2SK4075-ZK-E2-AY
O-252
O-252)
TRANSISTOR K4075
k4075
2sK4075 TRANSISTOR
2SK4075-ZK
k407
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K4076
Abstract: 2SK4076 LOT CODE NEC 2SK407 2SK4076-ZK
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4076 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4076 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4076-ZK-E1-AY Pure Sn Tin
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2SK4076
2SK4076
2SK4076-ZK-E1-AY
O-252
2SK4076-ZK-E2-AY
O-252)
K4076
LOT CODE NEC
2SK407
2SK4076-ZK
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k4075
Abstract: 2SK4075 TRANSISTOR K4075 2sK4075 TRANSISTOR 2sk*4075 2SK4075-ZK-E1-AY 2SK4075-ZK-E2-AY 2SK4075-ZK NEC Date code Marking 2SK40
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING 2SK4075-ZK-E1-AY Pure Sn Tin 2SK4075-ZK-E2-AY
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2SK4075
2SK4075
2SK4075-ZK-E1-AY
O-252
2SK4075-ZK-E2-AY
O-252)
k4075
TRANSISTOR K4075
2sK4075 TRANSISTOR
2sk*4075
2SK4075-ZK-E1-AY
2SK4075-ZK-E2-AY
2SK4075-ZK
NEC Date code Marking
2SK40
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mos fet marking k4
Abstract: VP5225 VP5225K4 l5 transistor
Text: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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VP5225
O-252,
DSFP-VP5225
NR053008
mos fet marking k4
VP5225
VP5225K4
l5 transistor
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Untitled
Abstract: No abstract text available
Text: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold -2.4V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications
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VP5225
O-252,
DSFP-VP5225
NR053008
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Untitled
Abstract: No abstract text available
Text: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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VP5225
O-252,
DSFP-VP5225
NR122107
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Untitled
Abstract: No abstract text available
Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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DN3765
O-252,
DSFP-DN3765
NR111707
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Untitled
Abstract: No abstract text available
Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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DN3765
O-252,
DSFP-DN3765
NR111207
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D-PAK package
Abstract: No abstract text available
Text: VP5225 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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VP5225
O-252,
DSFP-VP5225
NR031708
D-PAK package
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Untitled
Abstract: No abstract text available
Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of
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DN3765
DSFP-DN3765
A103108
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Untitled
Abstract: No abstract text available
Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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DN3765
DSFP-DN3765
A091208
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mos fet marking k4
Abstract: dn37 DN3765 DN3765K4-G
Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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DN3765
DSFP-DN3765
A103108
mos fet marking k4
dn37
DN3765
DN3765K4-G
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PDF
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Untitled
Abstract: No abstract text available
Text: Supertex inc. DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
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DN3765
DSFP-DN3765
A070113
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