D1164
Abstract: 2SK2857 marking NX ic 451
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2857 N チャネル MOS FET スイッチング用 2SK2857 は，4V 駆動タイプの N チャネル縦型 MOS FET で，5V 電源系 IC の出力による直接駆動が可能なスイッ
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2SK2857
2SK2857
D1164
marking NX
ic 451
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2SK3054
Abstract: No abstract text available
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3054 N チャネル MOS FET スイッチング用 2SK3054 は，2.5 V 駆動タイプの N チャネル縦型 MOS FET です。低電圧駆動のためドライブ電流を考慮する必要
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2SK3054
2SK3054
SC-70
D14209JJ2V0DS00
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2SK1398
Abstract: 2SJ184 TC-7644
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK1398 N チャネル MOS FET 高速スイッチング用 2SK1398 は，N チャネル縦型 MOS FET で，ディジタル回路における高速スイッチング・デバイスとして最適です。
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2SK1398
2SK1398
2SJ184
D14772JJ2V0DS00
TC-7644
2SJ184
TC-7644
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2SK3061
Abstract: No abstract text available
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3061 N チャネル パワー MOS FET スイッチング用 工業用 2SK3061 は N チャネル縦型パワー MOS FET で，スイッチング特性が優れており，各種アクチュエータ駆動用途
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2SK3061
O-220
D13100JJ1V0DS00
2SK3061
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2SK3058
Abstract: 2SK3058-S 2SK3058-Z MP-25 MP-25Z
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3058 N チャネル パワー MOS FET スイッチング用 工業用 2SK3058 は N チャネル縦型パワー MOS FET で，スイッチング特性が優れており，各種アクチュエータ駆動用途
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2SK3058
O-262
2SK3058-Z
O-220AB
2SK3058-S
O-220SMD
D13097JJ1V0DS00
2SK3058
2SK3058-S
2SK3058-Z
MP-25
MP-25Z
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2SK2826
Abstract: 2SK2826-S 2SK2826-Z MP-25 MP-25Z
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2826 N チャネル パワー MOS FET スイッチング用 工業用 2SK2826 は N チャネル縦型パワー MOS FET で，スイッチング特性が優れており，各種アクチュエータ駆動用途
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2SK2826
O-262
2SK2826-Z
O-220AB
2SK2826-S
O-220SMD
2SK2826
2SK2826-S
2SK2826-Z
MP-25
MP-25Z
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G3VM-21GR1
Abstract: MARKING 358 SOP-8 diode 6pin SMT G3VM-61G1 G3VM-21GR G3VM-21LR G3VM-21LR1 G3VM-41GR5 g3vm-61e1 G3VM-41LR5
Text: SELECTION GUIDE – MOS FET Relays MOS FET G3VM PCB Mount G3VM SMT G3VM SOP Dimensions mm in Please refer to data sheets for all dimension information Please refer to data sheets for all dimension information Please refer to data sheets for all dimension information
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120mA
500VAC
G3VM-401EY
000VAC
G3VM-401G
G3VM-401H
G3VM-21GR1
MARKING 358 SOP-8
diode 6pin SMT
G3VM-61G1
G3VM-21GR
G3VM-21LR
G3VM-21LR1
G3VM-41GR5
g3vm-61e1
G3VM-41LR5
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Untitled
Abstract: No abstract text available
Text: TK100A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)
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TK100A10N1
O-220SIS
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Untitled
Abstract: No abstract text available
Text: TK100A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)
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TK100A10N1
O-220SIS
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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mcm2018a
Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
mcm2018a
sun hold RAS 0610
cqq 765 RT
IC HX 710B
U256D
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PDF
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2SK1757
Abstract: 2SK1756 MEI-1202 TEA-1035
Text: DATA SHEET A MOS FIELD EFFECT POWER TRANSISTORS 2SK1756/2SK1757 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1756/2SK1757 is N-channel MOS Field Effect Tran PACKAGE DIMENSIONS in m illim e te rs sistor designed for high voltage switching applications.
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2SK1756/2SK1757
2SK1756
2SK1757
IEI-1209)
MEI-1202
TEA-1035
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SP126
Abstract: lg lcd tv panel circuit diagram free SPC8106F0B SPC8108FOC 4X12 lcd SP-1108 sp1 1r4 FL400 xe p001 XCSL
Text: S-MOS S Y S T E M S A Seiko Epson Affiliate SPC8106 LCD/CRT VGA CONTROLLER Data Sheet Copyright 1997 S-MOS Systems Inc. All rights reserved. VDC This document, and any text derived, extracted or transmitted from it, is the sole property of S-MOS Systems Inc. and may not be used, copied,
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SPC8106
SP1-127
X12-SP-001-07
Q0G57b3
SP126
lg lcd tv panel circuit diagram free
SPC8106F0B
SPC8108FOC
4X12 lcd
SP-1108
sp1 1r4
FL400
xe p001
XCSL
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L0565
Abstract: L0988 2SJ178 IR TK 19 544 ScansUX882
Text: NEC i i f / V 7 s— ? • S/— h mos 7 T MOS Field E ffe c t T r a n s is to r 2 S J1 7 8 MOS F E T ¡6 3 LJ$X<1V 51 2SJ178 Ü, P f t * / U f i MOS F E T T", 5 V b Ü i f ê B b 4* X ^ -y f- > y " • f " > < i - y , y i / / ^ K, # AX IC T - ’t 'o w F 7 > f7 i:ilt* to
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2SJ178
lj0897
T108-01
L0565
L0988
2SJ178
IR TK 19 544
ScansUX882
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APT5027BVR
Abstract: No abstract text available
Text: APT5027BVR r A D VA N C ED • W A P o w er M Te c h n o lo g y * soov 2oa 0.270Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT5027BVR
O-247
100Wjis)
MIL-STD-750
O-247AD
APT5027BVR
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SGS-ATES l120
Abstract: National Semiconductor 4045 transistor bf 175 TAA611
Text: PROFESSIONAL SEMICONDUCTOR INTRODUCTION This databook contains data sheets on the SGS-ATES range of linear, MOS and COS/MOS integrated circuits intended for professional applications. The information on each product has been specially presented in order that the
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K2234
Abstract: 2SK2234 TC-7958
Text: DATA SHEET NEC M BMOSSFIELD EFFECT POWER TRANSISTOR 2SK2234 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION The 2SK2234 is N-channel Power MOS Field Effect Transistor in m illim eters designed fo r high voltage switching applications.
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2SK2234
2SK2234
IEI-1209)
K2234
TC-7958
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PDF
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CDP18S601
Abstract: CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007
Text: RCA COS/MOS Memories, Microprocessors, and Support Systems This DATABOOK contains complete technical in formation on the full line of COS/MOS memory and microprocessor integrated circuits, COSMAC microboard computer systems, and COSMAC microprocessor support systems available from
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132nd
CDP18S601
CDP1802CD
MPM-206
RCA cosmac 1802
CD4061
CDP18S012
CDP1802CE
RCA-CDP1802
im6508
CDP18S007
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PDF
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transistor LD
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BST84 QUICK REFERENCE DATA DESCRIPTION N-channel vertical D-MOS transistor in SOT89 envelope and designed for use as line current interrupter in telephone sets and for application in
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BST84
transistor LD
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Untitled
Abstract: No abstract text available
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC 1 MOS FIELD EFFECT POWER TRANSISTOR 2SK2234 SWITCHING N-CHANNEL POWER MOS FET
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2SK2234
2SK2234
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LD4A
Abstract: High-speed switching P-Channel mos ld3a
Text: XP131A0150SR Power MOS FET ♦ N-Channel Power MOS FET ♦ DMOS Structure • Applications • Notebook PCs ♦ Low On-State Resistance: 0.0 50 MAX ? Cellular and portable phones • On-board power supplies # Li.ion battery systems ♦ Ultra High-Speed Switching
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XP131A0150SR
XP131A0150SR
XP134A11A1SR
XP134A11A1SR
XP134A11A1
LD4A
High-speed switching P-Channel mos
ld3a
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Untitled
Abstract: No abstract text available
Text: btS3T31 00237t,S Tib • APX N AUER PHILIPS/DISCRETE b7E D« N-channel enhancement mode vertical D>MOS transistor Philips Semiconductors FEATURES Product specification BSN20 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching
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btS3T31
00237t
BSN20
MRA783
MRA782
D237bfl
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