CHA2295
Abstract: No abstract text available
Text: CHA2295 RoHS Compliant 6-11GHz Buffer Splitter Amplifier GaAs Monolithic Microwave IC Description The CHA2295 is a broadband buffer splitter three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication
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CHA2295
6-11GHz
CHA2295
6-11GHz
14dBm
DSCHA22957262
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CHA2295
Abstract: No abstract text available
Text: CHA2295 6 - 11GHz Buffer Splitter Amplifier GaAs Monolithic Microwave IC Description OUT 1 The CHA2295 is a broadband buffer splitter three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication
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CHA2295
11GHz
CHA2295
-11GHz
14dBm
DSCHA22952240
28-Aug
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Untitled
Abstract: No abstract text available
Text: CHA2295 RoHS Compliant 6-11GHz Buffer Splitter Amplifier GaAs Monolithic Microwave IC Description The CHA2295 is a broadband buffer splitter three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication
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CHA2295
6-11GHz
CHA2295
6-11GHz
14dBm
DSCHA22957262
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Untitled
Abstract: No abstract text available
Text: united monolithic semiconductors CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS
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CHA7114
CHA7114
DSCHA7114-0197
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650NM photodiode
Abstract: OPT101 application OPT101 LOG100 106V metal proximity detector sensor photodiode 650nm nep 8pin sip 10k
Text: OPT101 MONOLITHIC PHOTODIODE AND SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER FEATURES DESCRIPTION ● SINGLE SUPPLY: +2.7 to +36V The OPT101 is a monolithic photodiode with on-chip transimpedance amplifier. Output voltage increases linearly with light intensity. The amplifier is designed
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OPT101
OPT101
650nm)
14kHz
INA118
LOG100
log10
V02/V01)
650NM photodiode
OPT101 application
LOG100
106V
metal proximity detector sensor
photodiode 650nm nep
8pin sip 10k
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TC911
Abstract: ICL7650 TC911ACPA LTC1052 OP07 OP07E TC911A TC911B op07 metal type TC911BCPA
Text: AUTO-ZEROED MONOLITHIC OPERATIONAL AMPLIFIERS TC911A TC911A TC911B TC911B AUTO-ZEROED MONOLITHIC OPERATIONAL AMPLIFIERS FEATURES GENERAL DESCRIPTION • The TC911 CMOS auto-zeroed operational amplifier is the first complete monolithic chopper-stabilized amplifier. Chopper operational amplifiers like the ICL7650/7652
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TC911A
TC911B
TC911
ICL7650/7652
LTC1052
TC911.
OP07/
ICL7650
TC911ACPA
OP07
OP07E
TC911A
TC911B
op07 metal type
TC911BCPA
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Untitled
Abstract: No abstract text available
Text: CHA3688aQDG RoHS COMPLIANT 12.5-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier monolithic circuit. The circuit is manufactured with a pHEMT
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CHA3688aQDG
5-30GHz
CHA3688aQDG
A3688A
5-30GHz
26dBm
115mA
24L-QFN4x4
DSCHA3688aQDG1035
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pin diagram of op-amp ic 741
Abstract: IC 741 OPAMP IC 741 OPAMP using transistor opamp 741 dip TC9011
Text: W TELEDYNE COMPONENTS TC901 MONOLITHIC, AUTO-ZEROED OPERATIONAL AMPLIFIER FEATURES GENERAL DESCRIPTION • The TC901 is a monolithic, auto-zeroed operational amplifier. It is a second-generation design of the TC91X series, the world's first monolithic, CMOS chopper-stabi
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TC901
ICL7650
TC901
23-23W
pin diagram of op-amp ic 741
IC 741 OPAMP
IC 741 OPAMP using transistor
opamp 741 dip
TC9011
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OP 741
Abstract: monolithic amplifier 11 MONOLITHIC AMPLIFIERS op07 oscillator op07 metal type Thermocouple Type K material ca 600 op07 equivalent single supply op07 metal type datasheet operational amplifier 741 oscillator circuit with op amp 741 its output
Text: AUTO-ZEROED MONOLITHIC OPERATIONAL AMPLIFIERS TC911A TC911A TC911B TC911B AUTO-ZEROED MONOLITHIC OPERATIONAL AMPLIFIERS FEATURES GENERAL DESCRIPTION • The TC911 CMOS auto-zeroed operational amplifier is the first complete monolithic chopper-stabilized amplifier. Chopper operational amplifiers like the ICL7650/7652
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TC911A
TC911B
TC911
ICL7650/7652
LTC1052
TC911.
OP07/
OP 741
monolithic amplifier 11
MONOLITHIC AMPLIFIERS
op07 oscillator
op07 metal type
Thermocouple Type K material ca 600
op07 equivalent single supply
op07 metal type datasheet
operational amplifier 741
oscillator circuit with op amp 741 its output
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Untitled
Abstract: No abstract text available
Text: Semiconductor, Inc. T C 9 11A T C 911B AUTO-ZEROED MONOLITHIC OPERATIONAL AMPLIFIERS FEATURES GENERAL DESCRIPTION • The TC911 CMOS auto-zeroed operational amplifier is the first complete monolithic chopper-stabilized amplifier. Chopper operational amplifiers like the ICL7650/7652 and
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TC911
ICL7650/7652
LTC1052
TC911.
OP07/741/7650
20msec.
TC911A
TC911B
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650NM photodiode
Abstract: OPT101 LOG100 OPT101P OPT101P-J OPT101W
Text: OPT101 MONOLITHIC PHOTODIODE AND SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER FEATURES DESCRIPTION ● SINGLE SUPPLY: +2.7 to +36V The OPT101 is a monolithic photodiode with on-chip transimpedance amplifier. Output voltage increases linearly with light intensity. The amplifier is designed
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OPT101
OPT101
650nm)
14kHz
650NM photodiode
LOG100
OPT101P
OPT101P-J
OPT101W
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Untitled
Abstract: No abstract text available
Text: CHA4861-QGG 6-11 GHz Variable Gain Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4861-QGG is a variable gain broadband four stage monolithic amplifier. It is designed for a wide range of applications, typically commercial
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CHA4861-QGG
CHA4861-QGG
A4861
6-11GHz
29dBm
160mA
28L-QFN5x5
DSCHA4861-QGG2262
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LOG100
Abstract: OPT101 OPT101P OPT101P-J OPT101P-R OPT101P-R-J OPT101W
Text: OPT101 FPO 70 MONOLITHIC PHOTODIODE AND SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● The OPT101 is a monolithic photodiode with on-chip transimpedance amplifier. Output voltage increases linearly with light intensity. The amplifier is designed
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OPT101
OPT101
LOG100
log10
V02/V01)
REF102
OPA627
IN4148
LOG100
OPT101P
OPT101P-J
OPT101P-R
OPT101P-R-J
OPT101W
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photodiode 650nm nep
Abstract: 650NM photodiode 650NM photodiode 40 kilohertz 650NM photodetector LOG100 OPT101 Photoconductive Infrared Sensor 106V light dependent resistor metal proximity detector sensor
Text: OPT101 FPO 70 MONOLITHIC PHOTODIODE AND SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● The OPT101 is a monolithic photodiode with on-chip transimpedance amplifier. Output voltage increases linearly with light intensity. The amplifier is designed
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OPT101
OPT101
INA118
LOG100
log10
V02/V01)
REF102
OPA627
photodiode 650nm nep
650NM photodiode
650NM photodiode 40 kilohertz
650NM photodetector
LOG100
Photoconductive Infrared Sensor
106V
light dependent resistor
metal proximity detector sensor
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911ac
Abstract: GE 7652 911B
Text: WTELEDYNE COMPONENTS TC911 AUTO-ZEROED MONOLITHIC OPERATIONAL AMPLIFIER FEATURES • ■ ■ ■ ■ ■ ■ First Monolithic Chopper-Stabilized Amplifier With On-Chip Nulling Capacitors Offset Voltage. 5 p,V
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TC911
TC911
10-Volt
911ac
GE 7652
911B
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CHA5093TCF/24
Abstract: RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate
Text: CHA5093TCF 24-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The packaged monolithic microwave IC MMIC is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,
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CHA5093TCF
24-26GHz
24-26GHz
29dBm
DSCHA50932035
04-Feb
CHA5093TCF/24
RO4003
CHA5093TCF
AN0005
Rogers RO4003 substrate
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Untitled
Abstract: No abstract text available
Text: CHA3694-QDG RoHS COMPLIANT 31-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC in SMD package Description UMS A3694 YYWW1 11 The CHA3694-QDG is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications,
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CHA3694-QDG
31-40GHz
A3694
YYWW11
CHA3694-QDG
31-40GHz
25dBm
24L-QFN4x4
DSCHA3694QDG9322
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Untitled
Abstract: No abstract text available
Text: CHA4250-QDG 5.5-11GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4250-QDG is a three stages monolithic GaAs medium power amplifier circuit. It is designed for commercial communication systems. The circuit is manufactured with a pHEMT
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CHA4250-QDG
5-11GHz
CHA4250-QDG
5-11GHz
31dBm
125mA
24L-QFN4x4
DSCHA4250-QDG3021
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X-band antenna
Abstract: x-band power transistor x band power amplifiers
Text: Advance Information X-band Medium Power Amplifier GaAs Monolithic Microwave IC Vg1 Vd1 Vg2 Vd2 IN OUT UMS develops a monolithic two stage GaAs medium amplifier designed for X band applications, covering 8.5 to 11.5GHz. The 23dB gain and the high saturated output
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28dBm
V/170mA.
AI1004
AI10040179
ES-CHA5115-99F
X-band antenna
x-band power transistor
x band power amplifiers
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CHA4033
Abstract: No abstract text available
Text: CHA4033 14-16GHz Power Amplifier GaAs Monolithic Microwave IC Description Vg The CHA4033 amplifier is a two stage monolithic medium power amplifier. The circuit is manufactured with a MESFET process : 0.5 µm gate length, via holes through the substrate, air bridges and
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CHA4033
14-16GHz
CHA4033
14-16GHz
24dBm
DSCHA40338159
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NN12
Abstract: P35-4101-000-200 power amplifier 12 GHZ 4101000200
Text: Data sheet Monolithic Broadband Amplifier, 0.5 - 3.5GHz The P35-4101-000-200 is a high performance monolithic broadband amplifier designed for use in a wide range of applications including telecommunications, instrumentation and electronic warfare. The amplifier gives typically 10dB gain over the
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P35-4101-000-200
500MHz
20dBm
P35-4101-000-200
462/SM/00517/200
NN12
power amplifier 12 GHZ
4101000200
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CHA5014
Abstract: No abstract text available
Text: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to
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CHA5014
CHA5014
30dBm
DSCHA50149090-31
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AN0020
Abstract: CHA5014 9v23
Text: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to
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CHA5014
CHA5014
30dBm
DSCHA50140112
AN0020
9v23
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TA7540P
Abstract: TA7540F
Text: TO SH IBA _ TA7540P/F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7540P, TA7540F SINGLE OPERATIONAL AMPLIFIER The TA7540P is a programmable monolithic precision micro-power operational amplifier that can be used either
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TA7540P/F
TA7540P,
TA7540F
TA7540P
TA7540F
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