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    CHA7114 Price and Stock

    United Monolithic Semiconductors CHA7114-99F

    MMW POWER AMPLIFIER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD CHA7114-99F 1
    • 1 $123
    • 10 $123
    • 100 $123
    • 1000 $123
    • 10000 $123
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    CHA7114 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CHA7114 United Monolithic Semiconductors X Band High Power Amplifier Original PDF

    CHA7114 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CHA7114-99F

    Abstract: CHA7114 x-Band High Power Amplifier
    Text: CHA7114 X Band High Power Amplifier GaAs Monolithic Microwave IC Vg2 Vd2 Description Main Features 0.25µm Power pHEMT Technology 8.5–11.5GHz Frequency Range 8W Output Power @ 4dBc High PAE: > 40% @ 4dBc 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A


    Original     		PDF CHA7114 CHA7114 DSCHA7114-7347 CHA7114-99F x-Band High Power Amplifier

    CHA7114-99F

    Abstract: CHA7114 x-Band High Power Amplifier x band high power amplifier
    Text: CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Vg2 Vd2 Description Main Features 0.25µm Power pHEMT Technology 8.5–11.5GHz Frequency Range 8W Output Power @ 4dBc High PAE: > 40% @ 4dBc 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A


    Original     		PDF CHA7114 CHA7114 DSCHA7114-7347 CHA7114-99F x-Band High Power Amplifier x band high power amplifier

    x-band power transistor

    Abstract: CHA7114 x-Band High Power Amplifier CHA7114-99F
    Text: CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Vg2 Vd2 Description Main Features 0.25µm Power pHEMT Technology 8.5–11.5GHz Frequency Range 8W Output Power @ 4dBcp High PAE: > 40% @ 4dBcp 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A


    Original     		PDF CHA7114 CHA7114 DSCHA7114-0197 x-band power transistor x-Band High Power Amplifier CHA7114-99F

    Untitled

    Abstract: No abstract text available
    Text: CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Vg2 Vd2 Description Main Features 1 1 1 1 1 1 1 0.25µm Power pHEMT Technology 8.5–11.5GHz Frequency Range 8W Output Power @ 4dBcp High PAE: > 40% @ 4dBcp 20dB nominal Gain Quiescent Bias point: Vd = 8V, Id = 2A


    Original     		PDF CHA7114 CHA7114 DSCHA7114-0197

    PPH25X

    Abstract: No abstract text available
    Text: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14


    Original     		PDF

    HC3014

    Abstract: No abstract text available
    Text: UMS X-BAND Tx-Rx CHIPSET The complete Solution for Military & Space Phased Array Radar Digital attenuator Core Chip Rx out Tx In Driver + HPA TTL Interface LNA Phase Shifter • CHC3014 1 Core chip (a 6-bit phase shifter, a 6-bit attenuator, an additional 2-bit attenuator for


    Original     		PDF HC3014 CHA1014

    Untitled

    Abstract: No abstract text available
    Text: united monolithic semiconductors CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS


    OCR Scan     		PDF CHA7114 CHA7114 DSCHA7114-0197