InGaAs Epitaxx EPM
Abstract: JDS Uniphase photodiode epm 605 606L EPM605LL JDS Uniphase photodiode epm EPITAXX 605 EPITAXX PIN Photodiode 4 Ghz 1550 nm pin photodiode 1550 sensitivity EPITAXX EPM
Text: Product Bulletin EPM 6xx Series C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes 605 606 613 650 Preliminary Specifications C-Band Monitor L-Band Monitor Pass Band Monitor General Purpose Monitor Conditions unless noted : Temperature = 25°C, VR = 5V
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Sun Enterprise 250
Abstract: silicon carbide LED silicon carbide
Text: Sensor Monitor 5.0 Manual and Datasheet Description The Sensor Monitor 5.0 SM5 is designed to monitor up to eight channels equipped with different types of sensors including photodiodes , temperature probes and many more. It features high precision input amplifiers, customizable
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SUS304-CSP
Abstract: XW41 F3UV F32-300 SUS304CSP measurement sensor illumination intensity F3UV-A30 AB-277 ab276
Text: F3UV 2002 .FM Seite 274 Dienstag, 26. März 2002 10:57 22 Ultraviolet power monitor/illumination monitor Monitoring output state of UV (ultraviolet light)/illumination light source ce Features Optical Fiber Type Can be used as ultraviolet power monitor/illumination monitor
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SUS303)
F32-300,
F32-70
F39-FU1M
AB-290
C3604
SUS304)
SUS304-CSP
XW41
F3UV
F32-300
SUS304CSP
measurement sensor illumination intensity
F3UV-A30
AB-277
ab276
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Untitled
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK PRESENTS NEW MID-IR LASER DIODES 2.0 um and 2.3 um MID-IR laser diodes, 5.6 mm with monitor photodiode, room temperature operation ! RLTCM-2010D, 2.0 um, 10 mW cw, 5.6 mm with monitor photodiode, datasheet on request RLTCM-2025D, 2.0 um, 25 mW cw, 5.6 mm with monitor photodiode, datasheet
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RLTCM-2010D,
RLTCM-2025D,
RLTCM-2307D,
RLTCM-2310D,
RLTCM-2325D,
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Photodiode
Abstract: VCSEL photodiode 1000 nm VCSEL photodiode SD150-14-002 850 photodiode VCSEL die Photodiode, nm NEP vcsel nm monitor photodiode
Text: SD150-14-002 VCSEL Monitor Photodiode Features • • VCSEL Mounting Pad Solderable Metalization Applications The SD150-14-002 monitor photodiode was designed to monitor the optical power of an 850 nm VCSEL. The photodiode has a metal pad on its top surface to mount the VCSEL die to, which is connected to a wirebond
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SD150-14-002
SD150-14-002
Photodiode
VCSEL
photodiode 1000 nm
VCSEL photodiode
850 photodiode
VCSEL die
Photodiode, nm NEP
vcsel nm
monitor photodiode
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edfa pump laser
Abstract: No abstract text available
Text: SD 048-11-21-000 Pump Laser Monitor Photodiode The SD 0480-11-21-000 Pump Laser Monitor Photodiode was designed to monitor the optical power of short wavelength 500 to 1000 nm semiconductor lasers, such as the 980 nm EDFA pump laser. These OEM detectors are supplied as bare die soldered to a ceramic block, which facilitates
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ABNM
Abstract: Current Monitors MAX4007 MAX4007EUT-T MAX4008 MAX4008EUT-T max4009 "Current Monitors"
Text: 19-2743; Rev 1; 5/03 High-Accuracy, 76V, High-Side Current Monitors in SOT23 Features ♦ Wide Reference Current Dynamic Range Guaranteed 250nA to 2.5mA with 5% Monitor Accuracy Extended 10nA to 10mA with 10% Monitor Accuracy ♦ Current MAX4007 or Voltage (MAX4008) Monitor
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250nA
MAX4007)
MAX4008)
MAX4007/MAX4008
OT-23,
MAX4007/MAX4008
ABNM
Current Monitors
MAX4007
MAX4007EUT-T
MAX4008
MAX4008EUT-T
max4009
"Current Monitors"
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications 250 m pitch, 40 ch parallel readout DWDM monitor with AWG Low crosstalk Precise chip position tolerance: ±0.05 mm Structure Parameter Photosensitive area Value
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G8909-01
KIRD1053E03
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g890901
Abstract: G8909-01
Text: InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications 250 m pitch, 40 ch parallel readout DWDM monitor with AWG Low crosstalk Precise chip position tolerance: ±0.05 mm Structure Parameter Photosensitive area Value
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G8909-01
KIRD1053E03
g890901
G8909-01
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Infrared-Sensor tsop1738
Abstract: of infrared sensor tsop1738 sony remote control TSOP1738 sensor how to test TSOP1738 sensor datasheet of infrared sensor tsop1738 RCT842MN ROC130 rc7009 tsop1738
Text: AN1749 Application Note Managing the Infrared Cell in the ST7 Monitor MCUs Family By DTV - Monitor MCU Applications Lab Introduction Putting an infrared remote sensor on a monitor application offers several advantages, such as making user adjustments far more convenient instead of having to press tedious miniature keys on
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AN1749
ST72751
ST72771
SDIP56
Infrared-Sensor tsop1738
of infrared sensor tsop1738
sony remote control
TSOP1738 sensor
how to test TSOP1738 sensor
datasheet of infrared sensor tsop1738
RCT842MN
ROC130
rc7009
tsop1738
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L5919
Abstract: hamamatsu PIN TO5
Text: HAMAMATSU 4 Beam CW Laser Diode Array L5919 Preliminary data • FEATURES Addressable Single Mode at 830nm Monitor Photodiode Inside Pitch 150µm APPLICATION Laser Beam Printer •ABSOLUTE MAXIMUM RATINGS Characteristics Reverse Voltage for LDs Reverse Voltage for Monitor PD
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L5919
830nm
L5919
hamamatsu PIN TO5
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InGaas PIN photodiode chip
Abstract: G8909-01 KIRD1053E02 SE-171
Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter
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G8909-01
SE-171
KIRD1053E02
InGaas PIN photodiode chip
G8909-01
KIRD1053E02
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter
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G8909-01
SE-171
KIRD1053E02
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DWDM AWG
Abstract: InGaAs photodiode array chip
Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter
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G8909-01
SE-171
KIRD1053E02
DWDM AWG
InGaAs photodiode array chip
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photo diode array InGaAs
Abstract: G8909-01 InGaAs photodiode array chip KIRD1053E02 SE-171
Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter
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G8909-01
SE-171
KIRD1053E02
photo diode array InGaAs
G8909-01
InGaAs photodiode array chip
KIRD1053E02
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InGaAs photodiode array chip
Abstract: G8909-01 KIRD1053E01 SE-171 50 um photodiode
Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance l DWDM monitor with AWG • General ratings Parameter Active area
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G8909-01
SE-171
KIRD1053E01
InGaAs photodiode array chip
G8909-01
KIRD1053E01
50 um photodiode
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PIN photodiode crosstalk
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter
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G8909-01
SE-171
KIRD1053E01
PIN photodiode crosstalk
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FTM7920EB
Abstract: ftm7920 FTM-7920 Mach-Zehnder modulator modulator fujitsu Mach-Zehnder modulator dual drive
Text: 12.5Gb/s NRZ LN Modulator with Monitor PD FTM7920EB FEATURES • • • • Z-Cut Design Supports Low Drive Voltages Zero Chirp Differential Input Design Integrated Monitor Photodiode GPO RF Input Connectors DESCRIPTION The FTM7920EB is a Ti:LiNbO3 Dual Drive Mach-Zehnder
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FTM7920EB
FTM7920EB
FCSI0502M200
ftm7920
FTM-7920
Mach-Zehnder modulator
modulator fujitsu
Mach-Zehnder modulator dual drive
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Mach-Zehnder modulator
Abstract: FTM7923FN ftm79 Photodiode, 10ghz
Text: 12.5Gb/s NRZ LN Modulator with Monitor PD FTM7923FN FEATURES • • • • • Operation up to 12.5Gb/s Zero Chirp Single Drive Modulator X-Cut LN Integrated Monitor Photodiode GPO RF Input Connector DESCRIPTION The FTM7923FN is a Ti:LiNbO3 Single Drive Mach-Zehnder
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FTM7923FN
FTM7923FN
Mach-Zehnder modulator
ftm79
Photodiode, 10ghz
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FTM7922ER
Abstract: Mach-Zehnder modulator dual electrode mach-zehnder Mach-Zehnder modulator dual drive
Text: Dual Drive 10Gb/s LN Modulator with Monitor PD FTM7922ER FEATURES • • • • Z-Cut Design Supports Low Drive Voltages Zero Chirp Differential Input Design Integrated Monitor Photodiode GPO RF Input Connectors DESCRIPTION The FTM7922ER is a Ti:LiNbO3 Dual Drive Mach-Zehnder
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10Gb/s
FTM7922ER
FTM7922ER
FCSI0502M200
Mach-Zehnder modulator
dual electrode mach-zehnder
Mach-Zehnder modulator dual drive
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FTM7921ER
Abstract: dual electrode mach-zehnder Mach-Zehnder modulator dual drive
Text: Dual Drive 10Gb/s LN Modulator with Monitor PD FTM7921ER FEATURES • • • • Z-Cut Design Supports Low Drive Voltages Zero Chirp Differential Input Design Integrated Monitor Photodiode GPO RF Input Connectors DESCRIPTION The FTM7921ER is a Ti:LiNbO3 Dual Drive Mach-Zehnder
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10Gb/s
FTM7921ER
FTM7921ER
FCSI0502M200
dual electrode mach-zehnder
Mach-Zehnder modulator dual drive
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FTM7923FN
Abstract: nrz optical modulator
Text: 12.5Gb/s NRZ LN Modulator with Monitor PD FTM7923FN FEATURES • • • • • Operation up to 12.5Gb/s Zero Chirp Single Drive Modulator X-Cut LN Integrated Monitor Photodiode GPO RF Input Connector DESCRIPTION The FTM7923FN is a Ti:LiNbO3 Single Drive Mach-Zehnder
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FTM7923FN
FTM7923FN
nrz optical modulator
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ACBY
Abstract: No abstract text available
Text: MP3430 90V Step-Up Converter with APD Current Monitor The Future of Analog IC Technology DESCRIPTION FEATURES The MP3430 is a monolithic step-up converter that integrates a power switch and a biased avalanche photodiode APD current monitor. The device can double the output voltage
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MP3430
MP3430
ACBY
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Untitled
Abstract: No abstract text available
Text: MP3430 90V Step-Up Converter with APD Current Monitor The Future of Analog IC Technology DESCRIPTION FEATURES The MP3430 is a monolithic step-up converter that integrates a power switch and a biased avalanche photodiode APD current monitor. The device can double the output voltage
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MP3430
MP3430
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