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    MOLD COMPOUND COB Search Results

    MOLD COMPOUND COB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC023 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.19 V / tf=170 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA014 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.35 V / tf=65 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    CS-USBAA00000-002 Amphenol Cables on Demand Amphenol CS-USBAA00000-002 Molded USB 2.0 Cable - Type A-A 2m Datasheet
    CS-USBAB00000-001 Amphenol Cables on Demand Amphenol CS-USBAB00000-001 Molded USB 2.0 Cable - Type A-B 1m Datasheet
    CS-USBAB00000-002 Amphenol Cables on Demand Amphenol CS-USBAB00000-002 Molded USB 2.0 Cable - Type A-B 2m Datasheet

    MOLD COMPOUND COB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    cd photo diode

    Abstract: class H epoxy resin gold detector IC material composition of chip capacitors ic 555 use with metal detector epoxy resin lead frame resin compound copper bond wire CNY64
    Text: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future


    Original     		PDF

    CV-8710

    Abstract: EME-G770HCD Sumitomo EME-G600 material SUMITOMO EME G770 EME-G760 MGC CCL-HL832 EME-G600 CCL-HL832 sumitomo g770 Ablestik ablebond 3230 epoxy
    Text:  Chapter 3 Package Materials CHAPTER 3 PACKAGE MATERIALS Introduction JIG-101 Ed 3.0 Declarable Substance List Reporting of 38 Substances of Very High Concern EU REACH Material Declaration Sheets Packages and Packing Methodologies Handbook 6 Jul 2010


    Original     		JIG-101 CV-8710 EME-G770HCD Sumitomo EME-G600 material SUMITOMO EME G770 EME-G760 MGC CCL-HL832 EME-G600 CCL-HL832 sumitomo g770 Ablestik ablebond 3230 epoxy PDF

    BORON

    Abstract: BPW34 application BPW77NA BPW41N bpx43-6 BPW43 BPW17 BPW85 BPW34 BPW41N IR DATA
    Text: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their future


    Original     		que98 BORON BPW34 application BPW77NA BPW41N bpx43-6 BPW43 BPW17 BPW85 BPW34 BPW41N IR DATA PDF

    BTC3838N3

    Abstract: FT-32
    Text: CYStech Electronics Corp. Spec. No. : C206N3 Issued Date : 2004.09.23 Revised Date : Page No. : 1/4 High Frequency Amplifier Transistor 11V, 50mA, 3.2GHz BTC3838N3 Features • High transition frequency, fT=3.2GHz(typ.) • Low output capacitance, Cob=0.8pF(typ.)


    Original     		C206N3 BTC3838N3 OT-23 UL94V-0 BTC3838N3 FT-32 PDF

    A1 marking code amplifier

    Abstract: marking A1 TRANSISTOR HJ669A Y2MARKING
    Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.09.23 Page No. : 1/3 MICROELECTRONICS CORP. HJ669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ669A is designed for low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C


    Original     		HE6830 HJ669A HJ669A O-252 183oC 217oC 260oC A1 marking code amplifier marking A1 TRANSISTOR Y2MARKING PDF

    marking code k1

    Abstract: marking A1 TRANSISTOR HI127
    Text: HI-SINCERITY Spec. No. : HE9017 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-251 • High DC current gain • Bult-in a damper diode at E-C Darlington Schematic


    Original     		HE9017 HI127 O-251 183oC 217oC 260oC marking code k1 marking A1 TRANSISTOR HI127 PDF

    marking A1 TRANSISTOR

    Abstract: HJ667A Y2 MARKING a5 marking
    Text: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2005.07.14 Page No. : 1/3 MICROELECTRONICS CORP. HJ667A PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ667A is designed for low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C


    Original     		HE6830 HJ667A HJ667A O-252 183oC 217oC 260oC marking A1 TRANSISTOR Y2 MARKING a5 marking PDF

    marking code k1

    Abstract: marking A1 TRANSISTOR marking y1 HI122
    Text: HI-SINCERITY Spec. No. : HI200102 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-251 The HI122 is designed of general purpose and low speed switching applications.


    Original     		HI200102 HI122 O-251 HI122 183oC 217oC 260oC marking code k1 marking A1 TRANSISTOR marking y1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE9012 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI340 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI340 is designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.


    Original     		HE9012 HI340 HI340 O-251 183oC 217oC 260oC PDF

    HSB857J

    Abstract: a5 marking
    Text: HI-SINCERITY Spec. No. : HJ200101 Issued Date : 2001.09.01 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB857J PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C • Maximum Temperatures


    Original     		HJ200101 HSB857J O-252 183oC 217oC 260oC HSB857J a5 marking PDF

    transistor mark code H1

    Abstract: A1 marking code amplifier HI649A y2 marking marking Y1 transistor
    Text: HI-SINCERITY Spec. No. : HE9003 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HI649A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C


    Original     		HE9003 HI649A HI649A O-251 183oC 217oC 260oC transistor mark code H1 A1 marking code amplifier y2 marking marking Y1 transistor PDF

    HMBTH10

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HN200101 Issued Date : 2000.02.01 Revised Date : 2008.07.07 Page No. : 1/4 MICROELECTRONICS CORP. HMBTH10 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBTH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.


    Original     		HN200101 HMBTH10 HMBTH10 OT-23 Dissipat60 183oC 217oC 260oC PDF

    A1 marking code amplifier

    Abstract: HJ117
    Text: HI-SINCERITY Spec. No. : HE6031 Issued Date : 1998.02.01 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ117 is designed for use in general purpose amplifier and low-speed switching applications.


    Original     		HE6031 HJ117 O-252 HJ117 183oC 217oC 260oC A1 marking code amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6001 Issued Date : 1996.02.26 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ31C is designed for use in general purpose amplifier and switching applications.


    Original     		HE6001 HJ31C HJ31C O-252 183oC 217oC 260oC PDF

    HI41C

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE9010 Issued Date : 1996.02.14 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI41C is designed for use in general purpose amplifier and switching applications.


    Original     		HE9010 HI41C HI41C O-251 183oC 217oC 260oC PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C


    Original     		HE9004 HI669A HI669A O-251 183oC 217oC 260oC PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE9001 Issued Date : 1996.02.28 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI31C is designed for use in general purpose amplifier and switching applications.


    Original     		HE9001 HI31C HI31C O-251 183oC 217oC 260oC PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE9002 Issued Date : 1994.03.02 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI32C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI32C is designed for use in general purpose amplifier and low speed switching applications.


    Original     		HE9002 HI32C HI32C O-251 183oC 217oC 260oC PDF

    HJ127

    Abstract: marking code 8A
    Text: HI-SINCERITY Spec. No. : HE6017 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-252 • High DC current gain • Built-in a damper diode at E-C Darlington Schematic


    Original     		HE6017 HJ127 O-252 183oC 217oC 260oC HJ127 marking code 8A PDF

    A1 marking code amplifier

    Abstract: HJ42C
    Text: HI-SINCERITY Spec. No. : HE6013 Issued Date : 1996.04.12 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ42C is designed for use in general purpose amplifier, low speed switching applications.


    Original     		HE6013 HJ42C HJ42C O-252 183oC 217oC 260oC A1 marking code amplifier PDF

    HJ41C

    Abstract: Y2 MARKING marking Y1 transistor
    Text: HI-SINCERITY Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ41C is designed for use in general purpose amplifier and switching applications.


    Original     		HE6010 HJ41C HJ41C O-252 183oC 217oC 260oC Y2 MARKING marking Y1 transistor PDF

    HI3669

    Abstract: ic k1
    Text: HI-SINCERITY Spec. No. : HE9029 Issued Date : 1997.11.14 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI3669 is designed for using in power amplifier applications, power switching application.


    Original     		HE9029 HI3669 HI3669 O-251 183oC 217oC 260oC ic k1 PDF

    y2 marking

    Abstract: A1 marking code amplifier HJ3669 a5 marking
    Text: HI-SINCERITY Spec. No. : HE6029 Issued Date : 1997.10.24 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ3669 is designed for using in power amplifier applications, power switching application.


    Original     		HE6029 HJ3669 HJ3669 O-252 183oC 217oC 260oC y2 marking A1 marking code amplifier a5 marking PDF

    TDS05160

    Abstract: TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond
    Text: V I^ W Y Vishay Telefunken Table of Package Forms Part Number Package Form Part Number Package Form Part Number Package Form TLBR5410 8 TLHR4401 11 TLMH3100 1 TLDR4400 11 TLHR4405 11 TLMH3101 1 TLDR4900 11 TLHR4600 11 TLMK3100 1 TLDR5400 TLDR5800 8 TLHR4601


    OCR Scan     		TLBR5410 TLDR4400 TLDR4900 TLDR5400 TLDR5800 TLHE4900 TLHE5100 TLHE5101 TLHE5102 TLHE5800 TDS05160 TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond PDF