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    HI3669

    Abstract: ic k1
    Text: HI-SINCERITY Spec. No. : HE9029 Issued Date : 1997.11.14 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI3669 is designed for using in power amplifier applications, power switching application.


    Original     		PDF HE9029 HI3669 HI3669 O-251 183oC 217oC 260oC ic k1

    HI3669

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9029-B Issued Date : 1997.11.14 Revised Date : 2000.11.01 Page No. : 1/3 HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI3669 is designed for using in power amplifier applications, power switching application.


    Original     		PDF HE9029-B HI3669 HI3669