1709 013
Abstract: CY7C1399BN CY7C1399BN-12VC CY7C1399BN-12VXC CY7C1399BN-12VXI CY7C1399BN-12ZC CY7C1399BN-12ZXC CY7C1399BNL-12ZC CY7C1399BNL-12ZXC
Text: CY7C1399BN 256K 32K x 8 Static RAM Features expansion is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and tri-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 95% when deselected.
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CY7C1399BN
CY7C1399BN
1709 013
CY7C1399BN-12VC
CY7C1399BN-12VXC
CY7C1399BN-12VXI
CY7C1399BN-12ZC
CY7C1399BN-12ZXC
CY7C1399BNL-12ZC
CY7C1399BNL-12ZXC
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TAA 691
Abstract: C1648 CY7C164 CY7C166 C1649 1709 013 c164 7C166 CY7C164-25 CY7C166-15
Text: CY7C164 CY7C166 16K x 4 Static RAM Features Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable CE and tri-state drivers. The CY7C166 has an active LOW Output
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CY7C164
CY7C166
CY7C164
CY7C166
CY7C166)
CY7C164/CY7C166
TAA 691
C1648
C1649
1709 013
c164
7C166
CY7C164-25
CY7C166-15
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85031
Abstract: CY7C199CN cy7c199cn-15pxc
Text: CY7C199CN 256K 32K x 8 Static RAM General Description [1] Features • • • • • • • • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL-compatible inputs and outputs
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CY7C199CN
28-pin
CY7C199CN
CY7C199CN,
85031
cy7c199cn-15pxc
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CY7C1007D-10VXI
Abstract: CY7C107D CY7C107D-10VXI
Text: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 80 mA @ 10 ns • Low CMOS Standby Power The CY7C107D and CY7C1007D are high-performance
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CY7C107D
CY7C1007D
CY7C107B/CY7C1007B
CY7C107D
CY7C1007D
83MHz,
66MHz
40MHz
100MHz,
CY7C1007D-10VXI
CY7C107D-10VXI
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TAA 691
Abstract: CY7C128A-20VXC transistor C128 C128A CY7C128A CY7C128A-15PC CY7C128A-15VC CY7C128A-15VXC CY7C128A-35VC CY7C128A-45PC
Text: CY7C128A 2K x 8 Static RAM Features Functional Description • Automatic power-down when deselected The CY7C128A is a high-performance CMOS static RAM organized as 2048 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , and active
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CY7C128A
CY7C128A
TAA 691
CY7C128A-20VXC
transistor C128
C128A
CY7C128A-15PC
CY7C128A-15VC
CY7C128A-15VXC
CY7C128A-35VC
CY7C128A-45PC
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CY7C1006D
Abstract: CY7C106D CY7C106D-10VXI 7C106D
Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA
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CY7C106D
CY7C1006D
CY7C106B/CY7C1006B
CY7C106D
CY7C1006D
83MHz,
66MHz
40MHz
100MHz,
CY7C106D-10VXI
7C106D
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CY7C199CN
Abstract: TSOP 173 g
Text: CY7C199CN 256K 32K x 8 Static RAM General Description [1] Features • • • • • • • • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL-compatible inputs and outputs
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CY7C199CN
28-pin
CY7C199CN
CY7C199CN,
TSOP 173 g
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HE144
Abstract: PDIP24 JEP95 tqfp128 weight MDS727
Text: ZMD-Standard November 1995 Package PDIP8 300 mil MDS 729 Supersedes Edition 01.95 Dimensions in millimetres Based on IEC 191-2N: Type 050G02 E 1 Dimensions L A1 A Seating Plane Z b1 e 0,254 M c θ 8 e1 1 D Pin 1 Index area Dimensions of Sub-Group B1 Dimensions of Sub-Group C1
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191-2N:
050G02
QS-000770-HD-01
HE144
PDIP24
JEP95
tqfp128 weight
MDS727
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MT 5388 BGA
Abstract: Broadcom 7019 BTS 6000 ericsson alcatel 1511 mux mobile switching center msc ericsson bts 6000 2x4 TTL demultiplexer cisco 2801 ericsson bts Technical specification alcatel 1511
Text: IDT Product Selector Guide Accelerated Thinking SM Table of Contents Integrated Processors Flow-Control Management Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
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12-03/DS/DL/BAY/10K
CORP-PSG-00123
MT 5388 BGA
Broadcom 7019
BTS 6000 ericsson
alcatel 1511 mux
mobile switching center msc
ericsson bts 6000
2x4 TTL demultiplexer
cisco 2801
ericsson bts Technical specification
alcatel 1511
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Untitled
Abstract: No abstract text available
Text: CY7C192 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed The CY7C192 is a high-performance CMOS static RAM organized as 65,536 x 4 bits with separate I/O. Easy memory expansion is provided by active LOW Chip Enable CE and
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CY7C192
28-Lead
CY7C192
CY7C191
28-Lead
300-Mil)
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MMA6
Abstract: MO088
Text: CY7C194BN 256 Kb 64K x 4 Static RAM General Description [1] Features • Fast access time: 15 ns and 25 ns • Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) • CMOS for optimum speed/power • TTL-compatible inputs and outputs • CY7C194BN is available in 24 DIP, 24 SOJ packages.
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CY7C194BN
CY7C194BN
MMA6
MO088
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CY7C199D-10VXI
Abstract: 1709 013 CY7C199C CY7C199D CY7C199D-10ZXI 7C199D-10 18THD
Text: CY7C199D 256K 32K x 8 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C199C The CY7C199D is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active
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CY7C199D
CY7C199C
CY7C199D
the28-LCC
28-pin
CY7C199D-10VXI
1709 013
CY7C199C
CY7C199D-10ZXI
7C199D-10
18THD
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CY7C185-35SC
Abstract: 1709 013 CY7C185 CY7C185-15VI CY7C185-20PXC BUT14
Text: CY7C185 64-Kbit 8K x 8 Static RAM Features Functional Description • High speed ❐ 15 ns ■ Fast tDOE ■ Low active power ❐ 715 mW ■ Low standby power ❐ 85 mW The CY7C185[1] is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is
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CY7C185
64-Kbit
CY7C185
300-mil-wide
CY7C185-35SC
1709 013
CY7C185-15VI
CY7C185-20PXC
BUT14
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CY7C191
Abstract: CY7C192 CY7C192-15VC CY7C192-15VXC
Text: CY7C192 64K x 4 Static RAM with Separate IO Features Functional Description • High speed ❐ 15 ns ■ CMOS for optimum speed/power ■ Low active power ❐ 860 mW The CY7C192 is a high performance CMOS static RAM organized as 65,536 x 4 bits with separate IO. Easy memory
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CY7C192
CY7C192
28-Pin
CY7C191
CY7C192-15VC
CY7C192-15VXC
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Untitled
Abstract: No abstract text available
Text: CY7C1399BN 256K 32K x 8 Static RAM Functional Description[1] Features • Single 3.3V power supply The CY7C1399BN is a high-performance 3.3V CMOS Static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and
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CY7C1399BN
CY7C1399BN
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Untitled
Abstract: No abstract text available
Text: CY7C107BN CY7C1007BN 1M x 1 Static RAM Features Functional Description The CY7C107BN and CY7C1007BN are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. These devices have an
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CY7C107BN
CY7C1007BN
CY7C1007BN
CY7C107BN/CY7C1007BN
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tPD10
Abstract: No abstract text available
Text: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Features Functional Description[1] • Pin- and function-compatible with CY7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 60 mA @ 10 ns • Low CMOS Standby Power • • • •
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CY7C107D
CY7C1007D
CY7C107B/CY7C1007B
28-pin
400-Mil
CY7C1007D
300-Mil
tPD10
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CY7C197BN
Abstract: CY7C197BN-12VC CY7C197BN-15VC CY7C197BN-25PC TAA 691
Text: CY7C197BN 256 Kb 256K x 1 Static RAM General Description [1] Features • • • • • Fast access time: 12 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL compatible inputs and outputs Available in 24-lead DIP and 24-lead SOJ
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CY7C197BN
24-lead
CY7C197BN
CY7C197BN-12VC
CY7C197BN-15VC
CY7C197BN-25PC
TAA 691
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cy7c109bnl
Abstract: CY7C109BNL-15VC CY7C1009BN CY7C109BN
Text: CY7C109BN CY7C1009BN 128K x 8 Static RAM Functional Description[1] Features • High speed The CY7C109BN/CY7C1009BN is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE1 , an active HIGH Chip Enable (CE2), an active LOW
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CY7C109BN
CY7C1009BN
CY7C109BN/CY7C1009BN
cy7c109bnl
CY7C109BNL-15VC
CY7C1009BN
CY7C109BN
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CY7C192-25PC
Abstract: No abstract text available
Text: CY7C192 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed The CY7C192 is a high-performance CMOS static RAM organized as 65,536 x 4 bits with separate I/O. Easy memory expansion is provided by active LOW Chip Enable CE and
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CY7C192
CY7C192
CY7C191.
CY7C192-25PC
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12VXA
Abstract: No abstract text available
Text: CY7C199CN 256K 32K x 8 Static RAM General Description[1] Features • • • • • • • • • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL-compatible inputs and outputs
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CY7C199CN
CY7C199CN
CY7C199CN,
12VXA
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1709 013
Abstract: CY7C1006D CY7C106D CY7C106D-10VXI
Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA
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CY7C106D
CY7C1006D
CY7C106B/CY7C1006B
CY7C106D
CY7C1006D
83MHz,
66MHz
40MHz
100MHz,
1709 013
CY7C106D-10VXI
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497AA
Abstract: bs 1600 1215E 497AE ncr sdc
Text: User Manual April 2001 497AE and 1215E Boundary-Scan Master 2 Advanced Operational Mode Features • The BSM2 is available in 2 versions: — The 497AE is available in a 28-pin SOJ package — The 1215E device is available in a 48-pin TQFP package ■ The 497AE and 1215E differ in the following capabilities
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497AE
1215E
28-pin
48-pin
497AA
bs 1600
ncr sdc
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CY7C199D-10VXI
Abstract: CY7C199D-10ZXI CY7C199C CY7C199D MO088
Text: CY7C199D 256K 32K x 8 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C199C The CY7C199D is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active
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CY7C199D
CY7C199C
CY7C199D
28-pin
CY7C199D-10VXI
CY7C199D-10ZXI
CY7C199C
MO088
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