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Catalog Datasheet	Type	Document Tags	PDF
IRF460 Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,	Original	30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065	PDF
Untitled Abstract: No abstract text available Text: Case Outline and Dimensions - MO-038AB	Original	MO-038AB	PDF
Untitled Abstract: No abstract text available Text: PD-60022C IR2130D 3-PHASE DRIVER Features n Hermetic n Floating channel designed for bootstrap operation n n n n n n Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels	Original	PD-60022C IR2130D IR2130D MO038AB	PDF
AN ir2130 Abstract: No abstract text available Text: PD-60022D IR2130D 3-PHASE DRIVER Features n Hermetic n Floating channel designed for bootstrap operation n n n n n n Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels	Original	PD-60022D IR2130D 100mA 675ns 425ns IR2130D MO-038AB AN ir2130	PDF
irf5n5210sc Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)	Original	4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS	PDF
transistor BC 458 Abstract: transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE Text: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and	Original	MS011795 transistor BC 458 transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE	PDF
IRGAC50 Abstract: MO036AA IRGAC50U IRGAC50F Text: HU m saa In t e r n a t i o n a l R e c t i f i e r Government and Space Products Control Integrated Circuits Vs Offset Supply Voltage Volts PMt Number Fax-onDemand Number lOUT VBS.VCC SupplyVoltage (Volts) Slnk, Source (Amps) Case Style, (CaseOutline) (1)	OCR Scan	IR2110E IR2110E6 IR2110L IR2110L6 IR2125Z 10to20 250mA IRGAC50 MO036AA IRGAC50U IRGAC50F	PDF
ir2130 application Abstract: Drive circuit for IGBT using IR2130 power supply IRF830 APPLICATION pulse amplifier measurement IR2130D 4.1 amplifier circuit diagram application IR2130 high voltage diodes irf840 power supply Mosfet driver IR2130 Text: Data Sheet No. PD-6.022A IR2130D 3-PHASE BRIDGE Features nHermetic nFloatingchanneldesignedforbootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for all channels	Original	IR2130D IR2130D MO-038AB ir2130 application Drive circuit for IGBT using IR2130 power supply IRF830 APPLICATION pulse amplifier measurement 4.1 amplifier circuit diagram application IR2130 high voltage diodes irf840 power supply Mosfet driver IR2130	PDF
Untitled Abstract: No abstract text available Text: Case Outline and Dimensions - MO-038AB CIC	Original	MO-038AB	PDF
10RIA10 Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy	Original	DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF	PDF
IRHNA57064SCS Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5	Original	94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS	PDF
IR2130D Abstract: 81 221 Text: IR2130D Case Outline and dimensions 28 Pin Dip Package Conforms to JEDEC Outline MO-038AB WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: 310 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: + 44 1883 732020	Original	IR2130D MO-038AB IR2130D 81 221	PDF
mosfet IRF450 Abstract: CA50 IR2130 IR2130D IRF450 IRF820 IRF830 IRF840 MO-038 Text: PD-60022B IR2130D 3-PHASE DRIVER Features n Hermetic n Floatingchanneldesignedforbootstrap n n n n n n operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for all channels	Original	PD-60022B IR2130D IR2130D ground52-7105 mosfet IRF450 CA50 IR2130 IRF450 IRF820 IRF830 IRF840 MO-038	PDF
transistor BC 458 Abstract: transistor a42 MO-003 transistor Bc 540 ua109a CERAMIC PIN GRID ARRAY CPGA lead frame transistor bc 577 W144A UA65A CERAMIC QUAD FLATPACK CQFP Text: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and	Original		PDF

ansi y14.5m Abstract: tolerancing MO038AB MO-038AB Text: Case Outline and Dimensions - MO-038AB CIC NOTES: 1 DIMENSIONING & TOLERANCING PE R ANSI Y 14.5M . 1 9 8 2 . 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS ARE SHOW N IN MILLIMETERS (IN C H E S ). [ 4] DIMENSION IS TO CENTER OF LEADS WHEN FORMED PARALLEL.	OCR Scan	MO-038AB MO-038AB. ansi y14.5m tolerancing MO038AB MO-038AB	PDF
IRHNJ597230SCS Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS Text: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5	Original	4047A IRHNJ597130 IRHNJ593130 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNJ597230SCS international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS	PDF