W7N8GVH1SB
Abstract: CF 8G erase F01-F03 51F8 samsung 8GB Nand flash
Text: W7NxVHxxBI PRELIMINARY* Embedded SLC NAND PATA SSD PBGA FEATURES DESCRIPTION Storage Capacities: 8GB and 16GB Environment conditions: The W7NxVHxxBI is a small reliable PATA IDE solid state storage solution in a single integrated BGA package. Typical NAND related
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66MBytes/s
W7N8GVH1SB
CF 8G erase
F01-F03
51F8
samsung 8GB Nand flash
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Hyperstone f9
Abstract: No abstract text available
Text: W7NxVHxxBI Embedded SLC NAND PATA SSD PBGA FEATURES DESCRIPTION Storage Capacities: 8GB and 16GB Environment conditions: The W7NxVHxxBI is a small reliable PATA IDE solid state storage solution in a single integrated BGA package. Typical NAND related
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32-bit
F4FW110301B4
Hyperstone f9
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Texas Instruments TTL
Abstract: texas instruments 74LS612 TMS4500 sn74als966 sunny SCO 020 IC PAL 006A tms4500a SN74AS888 A61686 74ls610
Text: SDVD001 .LSI Logic Data Book 1986 ~ TEXAS INSTRUMENTS General Information LSI Devices Application Reports Mechanical Data LSI Logic Data Book TEXAS INSTRUMENTS IMPORTANT NOTICE Texas Instruments Til reserves the right to make changes in the devices or the device specifications identified in this publication
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SDVD001
11----I
11M/S
SDV011DV600R
Texas Instruments TTL
texas instruments 74LS612
TMS4500
sn74als966
sunny SCO 020
IC PAL 006A
tms4500a
SN74AS888
A61686
74ls610
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h13h
Abstract: M01-M03 mtbf slc PG110 w7n8g
Text: W7NxVHxxBI ADVANCED* Embedded SLC NAND SSD PBGA FEATURES DESCRIPTION The W7NxVHxxBI is a small reliable solid state storage solution in a single integrated BGA package. Typical NAND related concerns like proper wear leveling, sufficient error correction, as well as
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ADSP218XN
Abstract: ADSP-2185N A 3202 DIODE DATASHEET adsp 2186 instruction set DIODE C04 06 EBR 5v MS-026 lqfp 80 ADSP-2100 ADSP-2184N ADSP-2185
Text: a DSP Microcomputer ADSP-218xN Series PERFORMANCE FEATURES SYSTEM INTERFACE FEATURES 12.5 ns Instruction cycle time @1.8 V internal , 80 MIPS sustained performance Single-cycle instruction execution Single-cycle context switch 3-bus architecture allows dual operand fetches in every
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ADSP-218xN
16-bit
100-Lead
BC-144-6
ST-100-1
ADSP218XN
ADSP-2185N
A 3202 DIODE DATASHEET
adsp 2186 instruction set
DIODE C04 06
EBR 5v
MS-026 lqfp 80
ADSP-2100
ADSP-2184N
ADSP-2185
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ADSP-2185N
Abstract: No abstract text available
Text: a DSP Microcomputer ADSP-218xN Series PERFORMANCE FEATURES SYSTEM INTERFACE FEATURES 12.5 ns Instruction cycle time @1.8 V internal , 80 MIPS sustained performance Single-cycle instruction execution Single-cycle context switch 3-bus architecture allows dual operand fetches in every
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ADSP-218xN
16-bit
100-Lead
BC-144-6
ST-100-1
ADSP-2185N
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STM32L051K8
Abstract: No abstract text available
Text: STM32L051x6 STM32L051x8 Access line ultra-low-power 32-bit MCU ARM -based Cortex®-M0+, up to 64 KB Flash, 8 KB SRAM, 2 KB EEPROM, ADC Datasheet - production data Features • • • • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40 to 125 °C temperature range
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STM32L051x6
STM32L051x8
32-bit
DocID025938
STM32L051K8
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STM32L051K8
Abstract: No abstract text available
Text: STM32L051x6 STM32L051x8 Access line ultra-low-power 32-bit MCU ARM -based Cortex®M0+, up to 64 KB Flash, 8 KB SRAM, 2 KB EEPROM, ADC Datasheet - production data Features • • • • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40 to 105/125 °C temperature range
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STM32L051x6
STM32L051x8
32-bit
32-bit
DocID025938
STM32L051K8
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stm32l052k
Abstract: No abstract text available
Text: STM32L052x6 STM32L052x8 Ultra-low-power 32-bit MCU ARM -based Cortex®-M0+, up to 64 KB Flash, 8 KB SRAM, 2 KB EEPROM, USB, ADC, DAC Datasheet - production data Features • • • • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40 to 125 °C temperature range
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STM32L052x6
STM32L052x8
32-bit
DocID025936
stm32l052k
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stm32l052
Abstract: No abstract text available
Text: STM32L052x6 STM32L052x8 Ultra-low-power 32-bit MCU ARM -based Cortex®-M0+, up to 64 KB Flash, 8 KB SRAM, 2 KB EEPROM, USB, ADC, DAC Datasheet - production data Features • • • • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40 to 105/125 °C temperature range
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STM32L052x6
STM32L052x8
32-bit
UFQFPN32
LQFP32
LQFP48
LQFP64
10x10
WLCSP36
TFBGA64
stm32l052
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JEOL
Abstract: No abstract text available
Text: k m a COAXIAL u R 1 0 8 . 2 9 4 . OOO . TECHNICAL DATA d e p a rtm e n t LOW PROFIL-PANEL EEDTROUGH CABLE JACK REAR MOUNT - CABLE .085 9A 06 Page SBMA 1 / 3 Issue : SERIES. ,.D IA m o u n t i n g h o l e CHARACTERISTICS 50 NOMINAL IMPEDANCE FREQUENCY RAM6E
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073ECHNIQUE
R03NY/S/B013
JEOL
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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900 v 9 amp mosfet
Abstract: OM9007SC OM9008SC OM9009SC OM9010SC
Text: OM9007SC OM9008SC OM9009SC OM9010SC POWER MOSFETS & FAST RECOVERY RECTIFIER IN HERMETIC ISOLATED JEDEC MO-078 PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET And Fast Recovery Power Rectifier FEATURES • • • • • Uncommitted M O S F E T And Rectifier In One Package
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OM9007SC
OM9009SC
OM9008SC
OM9010SC
MQ-078
switchin100
534-5776FAX
900 v 9 amp mosfet
OM9009SC
OM9010SC
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ST-JL05-16S-C2
Abstract: AWG22 SC SJ025295 ST-JL05-16P-C3 800KET SJ 38 SJ 024905 ST-UL05-16S-03-3500 ST-JL05-16S-C2-3500
Text: I IL %-ñ e DATE JK ft REV. EfrZSOlPS TABLE POLARIZING K EYW A Y SHELL SIZE 1 [DIMENSIONS] 0 A±0. 8 0 B ±0. 2 3 5. 9 18 TABLE 2 V SHELL S IZE THREAD 4 0 .6 2 6 . 9 1 1/8-18UNEF-2A 2 2 42. 2 2 9 . 6 1 1/4-18UNEF-2A 2 4 45. 4 3 2 . 8 1 3/8-18UNEF-2A 5 1.7
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1-20UNEF-2A
1/8-18UNEF-2A
1/4-18UNEF-2A
3/8-18UNEF-2A
5/8-18UNEF-2A
800KET
00NTA0T8
ST-JL05-16S-C2
AWG22 SC
SJ025295
ST-JL05-16P-C3
SJ 38
SJ 024905
ST-UL05-16S-03-3500
ST-JL05-16S-C2-3500
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Instrumentation Amplifier IC with tl084
Abstract: u1d diode ic TL074 APPLICATION NOTES
Text: TL054, TL054A ENHANCED JFET PRECISION QUAD OPERATIONAL AM PLIFIERS D3236, JUNE 1988 - REVISED JANUARY 1991 D, J, o r N PACKAGE Maximum Offset Voltage . . . 1.5 mV TL054A (TOP VIEW) High Slew Rate . . . 15.9 V/fts Typ at 25°C 1 OUT [ 1 U 14 2 4 OUT 13 3 4 IN 1 IN - C 2
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TL054,
TL054A
D3236,
TL054A)
L054A
TL054A,
1N914.
Instrumentation Amplifier IC with tl084
u1d diode
ic TL074 APPLICATION NOTES
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d3236
Abstract: TL054C
Text: TL054, TL054A ENHANCED JFET PRECISION QUAD OPERATIONAL AMPLIFIERS D3236, JUNE 1988 - REVISED JANUARY 1989 • Maximum Offset Voltage . . . 1.5 mV TL054A • High Slew Rate . . . 15.9 V/^is Typ at 25°C (TOP VIEW) 1 OUT [ 1 1 IN - £ 2 Low Total Harmonic Distortion . . . 0.003%
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TL054,
TL054A
D3236,
TL054A)
TL054
TL054A,
1N914.
d3236
TL054C
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rlr05c
Abstract: No abstract text available
Text: 'BRADFORDELECTRONICS R ESISTO R S E LE C TIO N G U ID E A Complete Selection of Metal Film Resistors • MILITARY ■ ESTABLISHED RELIABILITY ■ COMMERCIAL ■ FLAMEPROOF ■ LOW RESISTANCE ■ PULSE WITHSTANDING TO USE: Resistors are listed by power rating. Locate the wattage
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t462
Abstract: sony cxk58257m-12l CXK58257AP T46-2 CXK* Sony
Text: S4E SONY« D 0302303 000Mb37 0L7 « S O N Y CXK58257AP/ASP/AM •7 0L/85L/10L/12L -70LL/85LL/1OLL/12LL* 32768-word x 8-bit High Speed CMOS Static RAM ‘ SONY C O R P / C O M P O N E N T PR OD S Description CXK58257AP 28 pin DIP Plastic C X K 5 8 2 5 7 A P /A S P /A M is 262,144 bits high
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3fl23fl3
0004b37
CXK58257AP/ASP/AM:
32768-word
CXK58257AP/ASP/AM
300mil
CXK58257AP/ASP/AM-70L,
CXK58257AP/ASP/AM-85L,
CXK58257AP/
100ns
t462
sony cxk58257m-12l
CXK58257AP
T46-2
CXK* Sony
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am29203 "evaluation board"
Abstract: L0512 MV8000 TTL catalog CL1101 8038 ic tester circuit diagram tl 2345 ml gcr encoder parallel bus arbitration 30GRAMMABLE
Text: PROGRAMMABLE ’ROGRAMMABLE 30GRAMMABLE L DGRAMMABLE LG 3RAMMABLE LOG ÏRAMMABLE LOGI ÌAMMABLE LÄGIC a Advanced Micro Devices Programmable Array Logic Handbook Prepared by the Product Planning and Applications Staff at Advanced M icro Devices, Inc. Brad Kitson, Editor
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30GRAMMABLE
I-20090
S-172
am29203 "evaluation board"
L0512
MV8000
TTL catalog
CL1101
8038 ic tester circuit diagram
tl 2345 ml
gcr encoder
parallel bus arbitration
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Untitled
Abstract: No abstract text available
Text: C L O C K E D FIRST-1 SN74ACT3631 512 x 36 FIRST- O UT M E M O R Y S C A S 2 4 6 F -A U G U S T 1 9 9 3 - REVISED SEPTEM B ER 1995 F r e e - R u n n i n g C L K A and C L K B Can Be A s y n c h r o n o u s or C o i n c i d e n t O u t p u t - R e a d y and A l m o s t - E m p t y Fl ags
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SN74ACT3631
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FNR10
Abstract: B158-H6987-X-X-7600 a64 marking code
Text: SIEMENS C540U/C541U Data Sheet Revision History : 1997-10-01 Previous Releases none Original Version Page / Chapters Subjects (changes since last revision) Edition 1997-10-01 Published by Siemens AG, Bereich Ha lb le iter, MarketingKommunikation, BalanstraBe 73,
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C540U/C541U
C540U
C541U
P-SDIP-52-1
P-SDIP-52-1
FNR10
B158-H6987-X-X-7600
a64 marking code
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PDF
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S87C654
Abstract: Philips BC KO 118 capacitor 16KX8 p83c S87C654-4A44 S87C654-4N40 80C51 83C654 87C654 The CMOS Device Manual 1993
Text: • 711002b 0Qt.b7âci 52e] BIPHIN Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller DESCRIPTION The P83C654 Single-Chip 8-Bit Microcontroller is manufactured in an advanced CMOS process and is a derivative
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83C654
P83C654
80C51
83C654
80C51.
87C654
16kx8
16-bit
S87C654
Philips BC KO 118 capacitor
p83c
S87C654-4A44
S87C654-4N40
87C654
The CMOS Device Manual 1993
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marking code C1H SMD
Abstract: L05 SMD SMD MARKING CODE L33 L33 SMD marking N03B siemens C541U-1E C500 C501 C540U C541U
Text: SIEMENS Microcomputer Components 8-Bit CMOS Microcontroller C541U Data Sheet 05.99 C541U Data Sheet Revision History : 05.99 Previous Releases : 10.97 0riginal Version Page (10.97 version) Page (05.99 version) Subjects (changes since last revision) All sections
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C541U
C541U
C540U
P-SDIP-52
P-LCC-44-1
A-BIDI44X
0-5x45'
marking code C1H SMD
L05 SMD
SMD MARKING CODE L33
L33 SMD
marking N03B
siemens C541U-1E
C500
C501
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PDF
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diode E1110
Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t
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