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    MN101EF56G

    Abstract: QFP100-P-1818B MN101EF56K
    Text: MN101E56 Series MN101EF56G Type MN101EF56K FLASH Internal ROM type ROM byte 128K 256K RAM (byte) 6K 10K Package (Lead-free) LQFP100-P-1414 , QFP100-P-1818B 50 ns (at 2.7 V to 5.5 V, 20 MHz) 125 ns (at 1.8 V to 5.5 V, 8 MHz) *: at internal 2 , 3 , 4 , 5 , 6 , 8 , 10 times oscillation used


    Original     		PDF MN101E56 MN101EF56G MN101EF56K LQFP100-P-1414 QFP100-P-1818B MN101EF56G QFP100-P-1818B MN101EF56K

    MN101EF56G

    Abstract: QFP100-P-1818B
    Text: MN101E56 Series MN101EF56G Type FLASH Internal ROM type ROM byte 128K RAM (byte) 6K Package (Lead-free) Minimum Instruction Execution Time LQFP100-P-1414 (Under planning), QFP100-P-1818B (Under development) 50 ns (at 2.7 V to 5.5 V, 20 MHz) 125 ns (at 1.8 V to 5.5 V, 8 MHz)


    Original     		PDF MN101E56 MN101EF56G LQFP100-P-1414 QFP100-P-1818B MN101EF56G QFP100-P-1818B

    MN103SH

    Abstract: MN101E31 MN101EF16K MN101EF57G MN103SFE4K MN101EF31G MN103SfC2d MN103SFa5K MN103S MN101C54
    Text:                    Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF