MMJT9410G Search Results

MMJT9410G Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MMJT9410G		On Semiconductor	TRANS GP BJT NPN 30V 3A 3SOT-223		Original	PDF

Catalog Datasheet	MFG & Type	PDF	Document Tags
MMJT9410 Abstract: MMJT9410G Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	PDF	MMJT9410 OT-223 MMJT9410/D MMJT9410 MMJT9410G
MMJT9410 Abstract: MMJT9410G Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − • • • • • • http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − hFE = 85 (Min) @ IC = 0.8 Adc	Original	PDF	MMJT9410 OT-223 MMJT9410/D MMJT9410 MMJT9410G
Untitled Abstract: No abstract text available Text: MMJT9410 Bipolar Power Transistors NPN Silicon Features • SOT−223 Surface Mount Packaging • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS	Original	PDF	MMJT9410 OT-223 MMJT9410/D
Untitled Abstract: No abstract text available Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	PDF	MMJT9410 MMJT9410/D