TQP7M4002
Abstract: LB514
Text: TQP7M4002 Advance Datasheet 3V Quad-Band E-GSM/GSM850/DCS/PCS Power Amplifier MMIC Description: Package Outline : The TQP7M4002 is a quad-band capable 3V power amplifier MMIC for GSM applications. Fabricated with a high-reliability InGaP GaAs HBT technology, the MMIC supports GPRS Class12 operation. By virtue of advanced design techniques,
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TQP7M4002
E-GSM/GSM850/DCS/PCS
TQP7M4002
Class12
LB514
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sot89 mmic 25
Abstract: ap201 mmic amplifier sot-89 mmic sot-89 AP-201 MESFET GaAs MMIC Gain Block sot-89
Text: MMIC AP201 Product Features Application • 50 ~ 1000MHz • GaAs MESFET MMIC • 40dBm Output IP3 • 14dB Gain • 21dBm P1 dB • SOT-89 Package • High Linearity Drive Amplifier Description Package Type: SOT-89 AP201 is a gain block amplifier designed with GaAs MESFET MMIC in a low cost SOT-89 package.
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AP201
1000MHz
40dBm
21dBm
OT-89
OT-89
AP201
sot89 mmic 25
mmic amplifier sot-89
mmic sot-89
AP-201
MESFET
GaAs MMIC Gain Block sot-89
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Untitled
Abstract: No abstract text available
Text: MMIC AP245 Product Features Application • 300 ~ 3000 MHz • GaAs MMIC • 42dBm Output IP3 • 26dB Gain • 21dBm P1dB • Single +5V Supply • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Description Package : SOIC-8 AP245 is a high linearity amplifier designed with GaAs MMIC in a low cost.
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AP245
42dBm
21dBm
AP245
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Untitled
Abstract: No abstract text available
Text: MMIC AP245 Product Features Application • 300 ~ 3000 MHz • GaAs MMIC • 42dBm Output IP3 • 26dB Gain • 21dBm P1dB • Single +5V Supply • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package : SOIC-8 Description AP245 is a high linearity amplifier designed with GaAs MMIC in a low cost.
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AP245
42dBm
21dBm
AP245
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RFHIC
Abstract: b880 ap211 AP-211
Text: MMIC AP211 Product Features Application • 50 ~ 3000 MHz • GaAs MMIC • 42dBm Output IP3 • 13dB Gain • 24dBm P1dB • Single +5V Supply • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Description Package : SOIC-8 AP211 is a high linearity amplifier designed with GaAs MMIC in a low cost.
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AP211
42dBm
24dBm
AP211
RFHIC
b880
AP-211
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L1626
Abstract: E10 rt duroid epsilam 10 0.025 MSA-0104 avago mmic frequency divider MSA-0135 MSA-0204 S001 modamp Epsilam-10
Text: Basic MODAMP MMIC Circuit Techniques Application Note S001 Introduction and MODAMP MMIC Structure Avago Technologies’ MSA Monolithic Silicon Amplifier series MODAMP silicon bipolar Monolithic Microwave Integrated Circuits (MMICs) are intended for use as general
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5091-9312E
5967-5924E
L1626
E10 rt duroid
epsilam 10 0.025
MSA-0104
avago mmic frequency divider
MSA-0135
MSA-0204
S001
modamp
Epsilam-10
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Untitled
Abstract: No abstract text available
Text: Preliminary SBF-4089 Product Description DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBF-4089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process
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SBF-4089
SBF-4089
DC-500
EDS-103412
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Untitled
Abstract: No abstract text available
Text: Preliminary SBF-5089 Product Description DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBF-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process
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SBF-5089
EDS-103413
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N4 MMIC
Abstract: No abstract text available
Text: NGA-489 Product Description 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance
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NGA-489
NGA-489
NGA489
EDS-100375
N4 MMIC
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Bw5 transistor
Abstract: ML200C SBW-5089 broadband bias tee
Text: Preliminary Data Sheet SBW-5089 Product Description DC-8 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBW-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP
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SBW-5089
SBW-5089
ML200C,
ECB-100607
EDS-103325
Bw5 transistor
ML200C
broadband bias tee
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Untitled
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
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CMPA5585025F
Abstract: power transistor gaas x-band CMPA5585025F-TB
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA5585025F
CMPA5585025F
CMPA55
85025F
power transistor gaas x-band
CMPA5585025F-TB
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NGA-489
Abstract: No abstract text available
Text: NGA-489 Product Description 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance
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NGA-489
NGA-489
NGA489
EDS-100375
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RFIC and MMIC Amplifiers
Abstract: HPMX-3002 mmic ina Hewlett-Packard transistor microwave
Text: RFIC and MMIC Amplifiers Hewlett-Packard offers a broad line of Radio Frequency Integrated Circuit RFIC and Monolithic Microwave Integrated Circuit (MMIC) amplifiers for use in all aspects of the communications industry. 15␣ GHz. Design flexibility is
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marking N5 mmic
Abstract: marking n5 amplifier NGA-589 marking n5 amplifier 6.0 GHZ mmic n5
Text: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance
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NGA-589
NGA-589
NGA589
EDS-100376
marking N5 mmic
marking n5 amplifier
marking n5 amplifier 6.0 GHZ
mmic n5
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N4 Amplifier
Abstract: marking n4 mmic NGA-489 amplifier marking n4 N4 MMIC
Text: NGA-489 Product Description 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance
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NGA-489
NGA-489
NGA489
EDS-100375
N4 Amplifier
marking n4 mmic
amplifier marking n4
N4 MMIC
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AcP 9805
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BGA2031 MMIC variable gain amplifier P relim inary specification Philips Sem iconductors 1999 Feb 26 PHILIPS Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031 FEATURES PINNING SOT551 • High gain
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BGA2031
BGA2031
OT551
125006/3100/02/pp12
AcP 9805
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS E>^m ì ^iit BGA2001 silicon MMIC amplifier Objective specification 1998 Sep 01 File under Discrete Semiconductors, SC14 Philips Semiconductors PHILIPS Philips Semiconductors Objective specification silicon MMIC amplifier BGA2001 FEATURES
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BGA2001
BGA2001
OT343R
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BGA2022 MMIC mixer Objective specification File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Jan 13 PHILIPS Philips Semiconductors Objective specification MMIC mixer BGA2022 FEATURES PINNING SOT457 • Large frequency range
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BGA2022
BGA2022
OT457
127127/00/01/pp8
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A2003
Abstract: ung 05251
Text: DISCRETE SEMICONDUCTORS BGA2003 Silicon MMIC amplifier Objective specification Supersedes data of 1998 Sep 01 Philips Sem iconductors 1999 Feb 25 PHILIPS Philips Semiconductors Objective specification silicon MMIC amplifier BGA2003 FEATURES PINNING SOT343R
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BGA2003
BGA2003
OT343R
125006/3100/03/pp12
A2003
ung 05251
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS E>^m ì ^iit BGA2002 silicon MMIC amplifier Objective specification 1998 Sep 01 File under Discrete Semiconductors, SC14 Philips Semiconductors PHILIPS Philips Semiconductors Objective specification silicon MMIC amplifier BGA2002 FEATURES
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BGA2002
BGA2002
OT343R
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BGA2001 silicon MMIC amplifier Preliminary specification Supersedes data of 1999 Jan 01 Philips Sem iconductors 1999 Feb 25 PHILIPS Philips Semiconductors Preliminary specification silicon MMIC amplifier BGA2001 FEATURES PINNING SOT343R
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BGA2001
BGA2001
OT343R
125006/3100/04/pp12
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9.75 GHz or 10.6 GHz
Abstract: GD-25 MGF1001P
Text: Jan./1999 MITSUBISHI SEMICONDUCTOR <GaAs FET> r Prelim inary Mitsubishi Proprietary Not to be reproduced or "disclosed without permission by Mitsubishi Electric D ESCR IPTIO N M G F 1001 P Dual Oscilltor MMIC _ Outline Drawing The M GF1001P is a MMIC designed for use in
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MGF1001P
MGF1001P
00dBm
GD-25
10kHz
750B482G
B009452
9.75 GHz or 10.6 GHz
GD-25
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Untitled
Abstract: No abstract text available
Text: T485BVCO GaAs 38 GHz VCO MMIC with Two-Stage Buffer Amplifier • Monolithic Microwave Integrated Circuit MMIC Voltage Controlled Oscillator with Buffer Amplifier • InGaAs/AIGaAs/GaAs Pseudomorphic HEMT Technology • Frequency range: 34 GHz to 42 GHz
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T485BVCO
QS9000
IS09001
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