Philips DC Power Amplifier 380
Abstract: BGA2051 hotel BP317
Text: DISCRETE SEMICONDUCTORS BGA2051 MMIC power amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 13 Philips Semiconductors Objective specification MMIC power amplifier BGA2051 FEATURES PINNING NO395 • Single 3.6 V supply voltage
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BGA2051
NO395
SCA57
127127/00/01/pp8
Philips DC Power Amplifier 380
BGA2051
hotel
BP317
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BGA2450
Abstract: BP317 ISM2400
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 BGA2450 MMIC power amplifier Objective specification 2000 July 14 Philips Semiconductors Objective specification MMIC power amplifier BGA2450 PINNING FEATURES • Low-voltage operation 3 V PIN • High power-added efficiency (35 %)
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M3D302
BGA2450
OT457)
ISM2400
BGA2450
BP317
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TC950
Abstract: 1gg6 8054 1GG6-8054 GaAs MMIC ESD, Die Attach and Bonding Guidelines 0747 ics
Text: Agilent 1GG6-8054 DC–75 GHz SPDT GaAs MMIC Switch TC950 Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The TC950 is a GaAs monolithic microwave integrated circuit MMIC switch designed for low insertion loss and high isolation
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1GG6-8054
TC950
TC950
DC-75
TC950/rev3
1gg6
8054
1GG6-8054
GaAs MMIC ESD, Die Attach and Bonding Guidelines
0747 ics
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AMMC-5026-W10
Abstract: AMMC-5026 AMMC-5026-W50 Traveling Wave Amplifier
Text: Products > RF for Mobile, WLAN, mmW > mmW & microWave Devices > Amplifiers > AMMC-5026 AMMC-5026 2 - 35 GHz GaAs MMIC Traveling Wave Amplifier Description AMMC-5026 is a broadband PHEMT GaAs MMIC Traveling Wave Amplifier designed for medium output power and high gain over the full 2GHz to 35 GHz
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AMMC-5026
AMMC-5026
AMMC-5026-W10
AMMC-5026-W50
AMMC-5026-W10
AMMC-5026-W50
Traveling Wave Amplifier
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VQFN24
Abstract: CGB91 VQFN-24 Marking code CGB tdma circuit diagram VC-37 MMIC marking CODE 73
Text: GaAs MMIC CGB91 Target Datasheet • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones • Integrated temperature compensated bias circuit
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CGB91
VQFN24
VQFN24
CGB91
VQFN-24
Marking code CGB
tdma circuit diagram
VC-37
MMIC marking CODE 73
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VQFN24
Abstract: rf channel trap circuit CGB191 marking gain stage GaAs MMIC AMPLIFIER VQFN-24
Text: GaAs MMIC CGB191 Target Datasheet • HBT power amplifier for 1900 MHz CDMA, TDMA and WCDMA portable cellular phones • Integrated temperature compensated bias circuit
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CGB191
VQFN-24
25MHz
29dBm,
29dbm
VQFN24
VQFN24
rf channel trap circuit
CGB191
marking gain stage GaAs MMIC AMPLIFIER
VQFN-24
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29dBm
Abstract: CGB191 Q62702-G0131 VQFN24 rf channel trap circuit
Text: GaAs MMIC CGB191 Target Datasheet • • • • • ESD: HBT power amplifier for 1900 MHz CDMA, TDMA portable cellular phones Integrated temperature compensated bias circuit
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CGB191
Q62702-G0131
VQFN-24
VQFN24
29dBm
CGB191
Q62702-G0131
VQFN24
rf channel trap circuit
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c4 09 smd marking code
Abstract: No abstract text available
Text: GaAs MMIC CGB 240 Datasheet ?2 stages Bluetooth InGaP HBT-Power Amplifier ?Single Voltage Supply ?Operating voltage range: 2.0 to 6 V ?Pout = 23dBm at Vd=3.2V
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23dBm
16dBm
35dBc
IEEE802
Q62702-G0174
LL1005-FH)
TSSOP-10
c4 09 smd marking code
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murata COG capacitor
Abstract: INFINEON PART MARKING MIRA TECHNOLOGY CGB240 Q62702-G0174 TSSOP10 infineon marking code L2
Text: GaAs MMIC CGB 240 Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V
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23dBm
16dBm
35dBc
IEEE802
murata COG capacitor
INFINEON PART MARKING
MIRA TECHNOLOGY
CGB240
Q62702-G0174
TSSOP10
infineon marking code L2
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murata x7r capacitor
Abstract: murata COG capacitor TSSOP-10 marking H2 5-pin CGB240 Q62702-G0174 TSSOP10 MMIC marking CODE c4 Marking code CGB SMD MARKING code mmic
Text: GaAs MMIC CGB 240 Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V
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23dBm
16dBm
35dBc
IEEE802
06035J1R8BBT
LL1005-FH)
TSSOP-10
murata x7r capacitor
murata COG capacitor
TSSOP-10
marking H2 5-pin
CGB240
Q62702-G0174
TSSOP10
MMIC marking CODE c4
Marking code CGB
SMD MARKING code mmic
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murata COG capacitor
Abstract: INFINEON PART MARKING CGB240 Q62702-G0174 TSSOP10 TRL1 INFINEON package PART MARKING
Text: GaAs MMIC CGB 240 Preliminary Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V
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23dBm
16dBm
35dBc
IEEE802
murata COG capacitor
INFINEON PART MARKING
CGB240
Q62702-G0174
TSSOP10
TRL1
INFINEON package PART MARKING
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hittite j
Abstract: Hydrogen GaAs 0.15 pHEMT mmic j PHILADELPHIA
Text: v00.0105 APPLICATION NOTES HYDROGEN EFFECTS ON GaAs pHEMT DEVICES Introduction: The effects of residual Hydrogen H2 on GaAs pHEMT devices in hermetically sealed packages are well documented by the GaAs MMIC community. This application note is intended to serve as an overview of this
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215LP4E
Abstract: No abstract text available
Text: HMC215LP4 / 215LP4E v01.0111 Mixers - SINGLE & DOUBLE BALANCED - SMT 10 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 4.0 GHz Typical Applications Features The HMC215LP4 / HMC215LP4E is ideal for Wireless Infrastructure Applications: Input IP3: +25 dBm
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HMC215LP4
215LP4E
HMC215LP4E
HMC215LP4
215LP4E
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Untitled
Abstract: No abstract text available
Text: HMC215LP4 / 215LP4E v01.0111 Mixers - siNGLe & DOUBLe BALANCeD - sMT 10 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 4.0 GHz Typical Applications Features The HMC215LP4 / HMC215LP4e is ideal for Wireless infrastructure Applications: input iP3: +25 dBm
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HMC215LP4
215LP4E
HMC215LP4E
16mm2
HMC215LP4
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H215
Abstract: HMC215LP4 HMC215LP4E HMC552LP4
Text: HMC215LP4 / 215LP4E v00.0906 MIXERS - SMT 8 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 4.0 GHz Typical Applications Features The HMC215LP4 / HMC215LP4E is ideal for Wireless Infrastructure Applications: Input IP3: +25 dBm • PCS / 3G Infrastructure
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HMC215LP4
215LP4E
HMC215LP4E
HMC215LP4
H215
HMC552LP4
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Untitled
Abstract: No abstract text available
Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC7149 v01.1113 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz AMPLIFIERS - LINEAR & POWER - CHIP
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HMC7149
HMC7149
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Untitled
Abstract: No abstract text available
Text: OBSOLETE PRODUCT HMC218MS8 / 218MS8E v04.0906 MIXERS - SINGLE & DOUBLE-BALANCED - SMT GaAs MMIC SMT DOUBLE-BALANCED MIXER, 4.5 - 6 GHz Typical Applications Features The HMC218MS8 / HMC218MS8E is ideal for: Passive Double-Balanced Topology • Basestations, Repeaters & Access Points
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HMC218MS8
218MS8E
HMC218MS8E
HMC218MS8
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H213
Abstract: H213 mixer HMC213MS8 19RF19 H2-13 planar transformer pcb HMC213MS8E lo44 LO-18
Text: HMC213MS8 / 213MS8E v002.0505 MIXERS - SMT 7 GaAs MMIC SMT DOUBLEBALANCED MIXER, 1.5 - 4.5 GHz Typical Applications Features The HMC213MS8 / HMC213MS8E is ideal for: Ultra Small Package: MSOP8 • Base Stations Conversion Loss: 8.5 dB • PCMCIA Transceivers
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HMC213MS8
213MS8E
HMC213MS8E
HMC213MS8
H213
H213 mixer
19RF19
H2-13
planar transformer pcb
lo44
LO-18
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Untitled
Abstract: No abstract text available
Text: HMC270MS8G / 270MS8GE v04.0607 GaAs MMIC SPDT SWITCH NON-REFLECTIVE, DC - 8 GHz Typical Applications Features The HMC270MS8G / HMC270MS8GE is ideal for DC - 8.0 GHz applications: Broadband Performance: DC - 8 GHz • CATV Non-Relective Design • MMDS & WirelessLAN
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HMC270MS8G
270MS8GE
HMC270MS8GE
HMC270MS8G
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HMC277MS8
Abstract: 277MS8E HMC272MS8 microwave passive repeaters
Text: HMC277MS8 / 277MS8E v00.0906 MIXERS - SMT 8 GaAs MMIC SMT SINGLE BALANCED MIXER, 0.7 - 1.2 GHz Typical Applications Features The HMC277MS8 / HMC277MS8E is ideal for: Passive Topology • Cellular / 3G Infrastructure LO / RF Isolation: 26 dB • Basestations & Repeaters
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HMC277MS8
277MS8E
HMC277MS8E
HMC277MS8
HMC277MS8E
HMC277MS]
277MS8E
HMC272MS8
microwave passive repeaters
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CGY2030M
Abstract: SSOP16 SSOP20 TL 188 TRANSISTOR PNP
Text: Philips Semiconductors Preliminary specification DECT 500 mW power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 40% The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically
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SSOP16
CGY2030M
CGY2030M
711032b
OlOblD45
SSOP20
TL 188 TRANSISTOR PNP
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schematic diagram power amplifier free
Abstract: class g power amplifier schematic philips dect
Text: Philips Semiconductors Product specification DECT 500 mW power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 40% The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically
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SSOP16
CGY2030M
CGY2030M
neCGY2030M
schematic diagram power amplifier free
class g power amplifier schematic
philips dect
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CGY2030M
Abstract: SSOP16 SSOP20 footprint ssop16
Text: Philips Semiconductors Product specification DECT 500 mW power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 40% The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically
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OCR Scan
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SSOP16
CGY2030M
CGY2030M
SSOP20
footprint ssop16
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gsm signal amplifier circuit diagram
Abstract: MGD629
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Am plifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier
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PCA5075
SA1620.
CGY2013G
CGY2013G
MGD629
SMD0402;
SMD0603.
gsm signal amplifier circuit diagram
MGD629
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