CMPA0060025F
Abstract: CMPA0060025F-TB CMPA2560002F JESD22
Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA0060025F
Hz-6000
CMPA0060025F
CMPA00
60025F
CMPA0060025F-TB
CMPA2560002F
JESD22
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CMPA0060025
Abstract: bonding wire cree A114D S-21105 CMPA0060025D
Text: CMPA0060025D 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA0060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA0060025D
CMPA0060025D
CMPA00
CMPA0060025
bonding wire cree
A114D
S-21105
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Untitled
Abstract: No abstract text available
Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA0060025F
Hz-6000
CMPA0060025F
CMPA00
60025F
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TBTH06M20
Abstract: CMPA0060025F
Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA0060025F
Hz-6000
CMPA0060025F
CMPA00
60025F
TBTH06M20
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CMPA0060025F
Abstract: RF-35-0100-CH CMPA0060025F-TB
Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA0060025F
Hz-6000
CMPA0060025F
CMPA00
60025F
RF-35-0100-CH
CMPA0060025F-TB
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CMPA0060025D
Abstract: No abstract text available
Text: CMPA0060025D 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA0060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA0060025D
CMPA0060025D
CMPA00
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CD 2399 GP
Abstract: ic cd 2399 gp ic cd 2399 go
Text: _ DATA SHEET_ / BIPOLAR ANALOG INTEGRATED CIRCUITS liPC8128TB, /¿PC8151TB, pPC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The ^¡PC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for
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liPC8128TB,
PC8151TB,
pPC8152TB
PC8128TB,
8151TB
8152TB
T-00-3
WS60-00-1
C10535E)
CD 2399 GP
ic cd 2399 gp
ic cd 2399 go
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62398
Abstract: c2u 611 75816 1C250 uPC8128
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC8128TB, µPC8151TB, µPC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The µPC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for
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PC8128TB,
PC8151TB,
PC8152TB
8151TB
8152TB
62398
c2u 611
75816
1C250
uPC8128
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cq 949
Abstract: fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053
Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • High Output Power: P ^ b = 25.5dBm Typ. • High Gain: G ^ b = 9dB (Typ.) • High PAE: riadd = 20% (Typ.) • Wide Frequency Band: 27.5-31.5 GHz
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FMM5802X
FMM5802X
FCSI0599M200
cq 949
fujitsu power amplifier GHz
fujitsu phemt
FUJITSU RF 053
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uc8151
Abstract: TPC815 UPC 1035 8151T upc 814 l nec uPC 1163 A upc 1478
Text: _ DATA SHEET_ / BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC8128TB, ¿¿PC8151TB, ¿¿PC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The /xPC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for
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uPC8128TB
uPC8151TB
uPC8152TB
/xPC8128TB,
8151TB
8152TB
uc8151
TPC815
UPC 1035
8151T
upc 814 l nec
uPC 1163 A
upc 1478
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transistor wideband marking 545
Abstract: Marking GP marking 865 mmic mmic marking 865
Text: Application Note LOW-CURRENT SILICON MMIC AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES USAGE AND APPLICATIONS OF µPC8128TB, µPC8151TB, AND µPC8152TB Document No. P13914EJ1V0AN00 1st edition Date Published March 1999 N CP (K) Printed in Japan 1999 [MEMO]
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PC8128TB,
PC8151TB,
PC8152TB
P13914EJ1V0AN00
circu88-6130
transistor wideband marking 545
Marking GP
marking 865 mmic
mmic marking 865
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sna476tr1
Abstract: sna4 sna476
Text: Stanford Microdevices Product Description SNA-476 Stanford Microdevices' SNA-476 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline ceramic package. This amplifier provides 13dB of gain when biased at 70mA and 5.0V.
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SNA-476
SNA-400)
SNA-476
sna476tr1
sna4
sna476
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nec 16312
Abstract: c1677 PC1678G TRANSISTOR MARKING CODE 1P 6PIN PC1677 UPC1677C PC1677C PC2709T marking code C1E mmic 4327 030 11011
Text: Application Note USAGE AND APPLICATION OF SILICON MEDIUMPOWER HIGH-FREQUENCY AMPLIFIER MMIC µPC1677 to 1679 µPC2708 to 2710 µPC2762/2763 µPC2771/2776 Document No. P12152EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) 1997, 1999 Printed in Japan
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PC1677
PC2708
PC2762/2763
PC2771/2776
P12152EJ2V0AN00
an88-6130
nec 16312
c1677
PC1678G
TRANSISTOR MARKING CODE 1P 6PIN
UPC1677C
PC1677C
PC2709T
marking code C1E mmic
4327 030 11011
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SNA-476-TR2
Abstract: 110C 155C SNA-400 SNA-476 SNA-476-TR1 SNA-476-TR3 sna476tr1
Text: Product Description SNA-476 Stanford Microdevices’ SNA-476 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline ceramic package. This amplifier provides 13dB of gain when biased at 70mA and 5.0V. DC-8 GHz, Cascadable
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SNA-476
SNA-476
SNA-400)
SNA-476-TR2
110C
155C
SNA-400
SNA-476-TR1
SNA-476-TR3
sna476tr1
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eudyna an
Abstract: No abstract text available
Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 25.5dBm Typ. High Gain: G1dB = 9dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5802X
FMM5802X
eudyna an
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Untitled
Abstract: No abstract text available
Text: UPC1654A UPC1654B UPC1654P 1.0 GHz SILICON MMIC AMPLIFIER NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES 22 • BROADBAND PERFORMANCE: 10 to 1100 MHz 20 • INPUT AND OUTPUT MATCHED TO 50 Q CÛ • AVAILABLE IN CHIP OR HERMETIC PACKAGE m TJ 18 . EXCELLENT LINEARfTY
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UPC1654A
UPC1654B
UPC1654P
UPC1654
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mmic sot-89
Abstract: darlington amplifiers SNA-487 sna-186 SNA-486 SNA-176 STANFORD sna476
Text: Stanford Microdevices Characteristics of GaAs MMIC 50 Ohm Gain Blocks This section contains G a A s M M IC gain blocks from Stanford Microdevices. The devices below provide exceptional performance from D C to as high as 10 GHz. These monolithic HBT Darlington amplifiers are designed
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50-ohm
SNA-100
SNA-200
SNA-300
SNA-400
SNA-500
SNA-600
DC-10
OT-89
mmic sot-89
darlington amplifiers
SNA-487
sna-186
SNA-486
SNA-176 STANFORD
sna476
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FUJITSU MMIC LNA
Abstract: FUJITSU LNA
Text: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω
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FMM5704X
36-40GHz
FMM5704X
FCSI05009M200
FUJITSU MMIC LNA
FUJITSU LNA
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Untitled
Abstract: No abstract text available
Text: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω
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FMM5704X
36-40GHz
FMM5704X
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Untitled
Abstract: No abstract text available
Text: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω
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FMM5704X
36-40GHz
FMM5704X
Ite05
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MP 9720
Abstract: IrL 1520 N MGA-31716 0402 in 9720 avago mga x
Text: MGA-31716 0.1 W High Linearity Driver Amplifier Data Sheet Description Features Avago Technologies MGA-31716 is a high linearity driver MMIC Amplifier housed in a standard QFN 3X3 16 lead plastic package. It features high gain, low operating current, low noise figure with good input and output
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MGA-31716
MGA-31716
AV02-3264EN
MP 9720
IrL 1520 N
0402 in 9720
avago mga x
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Untitled
Abstract: No abstract text available
Text: Product Description SNA-476 Stanford M icrodevices’ SNA-476 is a GaAs m onolithic broadband am plifier MMIC housed in a low-cost surface mountable stripline ceram ic package. This am plifier provides 13dB of gain when biased at 70m A and 5.0V. DC-8 GHz, Cascadable
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SNA-476
SNA-476
SNA-400)
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PDF
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FMM5704X
Abstract: ZL 264
Text: FMM5704X 36-40GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2.0dB Typ. @ f=40 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=40 GHz • Wide Frequency Band: 36-40 GHz • High Output Power: 9dBm (Typ.) @ f=40 GHz • Impedance Matched Zin/Zout = 50Ω
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FMM5704X
36-40GHz
FMM5704X
ZL 264
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Untitled
Abstract: No abstract text available
Text: Stanford Microdevices SNA-687 Product Description Stanford M icrodevices’ SNA-687 is a GaAs m onolithic broadband am plifier MMIC housed in a low-cost drop-in plastic package. This am plifier provides 11dB of gain and +19dBm of P1dB when biased at 80m A and 5.9V.
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SNA-687
SNA-687
19dBm
SNA-600)
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