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    MMDF2N06VLR1 Datasheets (1)

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    MMDF2N06VLR1 Motorola TMOS SO-8 for surface mount Original PDF

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    Abstract: TMOS E-FET MMDF2N06VL MMDF2N06VLR1 MMDF2N06VLR2
    Text: MOTOROLA Order this document by MMDF2N06VL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMDF2N06VL TMOS V SO-8 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This


    Original     		PDF MMDF2N06VL/D MMDF2N06VL MMDF2N06VL/D* TB-17 TMOS E-FET MMDF2N06VL MMDF2N06VLR1 MMDF2N06VLR2

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    Text: MOTOROLA Order this document by MMDF2N06VL/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOSV S O -8 for S urface Mount N-Channel Enhancement-Mode Silicon Gate DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS RDS on = 0.130 OHM TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This


    OCR Scan     		PDF MMDF2N06VL/D MMDF2N06VLD