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    Untitled

    Abstract: No abstract text available
    Text: MMBT7002W N-Channel Enhancement Mode Field Effect Transistor 1. Gate 2. Source 3. Drain SOT-323 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VDSS 60 V 60 V ± 20 ± 40 115 800 V Drain Source Voltage Drain Gate Voltage (RGS ≤ 1 MΩ)


    Original     		PDF MMBT7002W OT-323

    Untitled

    Abstract: No abstract text available
    Text: MMBT7002W MMBT7002W N-Channel Enhancement Mode Field Effect Transistor N-Kanal Feldeffekt Transistor – Anreicherungstyp N N Version 2011-02-01 2 ±0.1 0.3 1 ±0.1 Type Code 1 1.25±0.1 2.1±0.1 3 2 1.3 Dimensions - Maße [mm] 1=G 2=S 3=D Power dissipation – Verlustleistung


    Original     		PDF MMBT7002W MMBT7002W OT-323 UL94V-0