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    MMBT5551 G1 Search Results

    MMBT5551 G1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MMBT5551-G1 Zowie Technology High Voltage Transistor NPN silicon Original PDF

    MMBT5551 G1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBT5550

    Abstract: MMBT5551 1N914
    Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO MMBT5550 140 160 6.0 600 MMBT5551 160 180 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100


    Original     		PDF MMBT5550 MMBT5551 OT-23 MMBT5550 MMBT5551 1N914

    MMBT5551

    Abstract: MMBT5551 G1 1N914 MMBT5550
    Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100 , MMBT5550 MMBT5551


    Original     		PDF MMBT5550 MMBT5551 OT-23 MMBT5551 MMBT5551 G1 1N914 MMBT5550

    Untitled

    Abstract: No abstract text available
    Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100 , MMBT5550 MMBT5551


    Original     		PDF MMBT5550 MMBT5551 OT-23

    Untitled

    Abstract: No abstract text available
    Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 * “G” Lead Pb -Free 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) (3) 1.0 , MMBT5550 MMBT5551 140 160


    Original     		PDF MMBT5550 MMBT5551 OT-23

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.


    Original     		PDF MMBT5551 MMBT5551 MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010.

    MMBT5551A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION


    Original     		PDF MMBT5551 OT-23 MMBT5551L MMBT5551-AE3-R MMBT5551L-AE3-R OT-23 QW-R206-010 MMBT5551A

    marking G1 sot-23

    Abstract: MMBT5401 MMBT5551 MARKING G1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1


    Original     		PDF OT-23 MMBT5551 OT-23 MMBT5401 100MHz MMBT5551 marking G1 sot-23 MMBT5401 MARKING G1

    marking G1 sot23 UTC

    Abstract: No abstract text available
    Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR


    Original     		PDF MMBT5551 OT-23 QW-R206-010, marking G1 sot23 UTC

    sot23 g1

    Abstract: MMBT5551
    Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS 3 *Telephone switching circuit *Amplifier MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR


    Original     		PDF MMBT5551 OT-23 QW-R206-010 sot23 g1 MMBT5551

    TRANSISTOR SMD MARKING g1

    Abstract: g1 smd transistor TRANSISTOR SMD catalog smd transistor g1 MMBT5551 catalog transistors smd transistors list NF marking TRANSISTOR SMD smd transistor 079 SMD TRANSISTOR MARKING 079
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBT5551 product family SOT-23 Plastic-Encapsulate Biploar Transistors


    Original     		PDF MMBT5551 OT-23 600mA 300mW 80MHz TRANSISTOR SMD MARKING g1 g1 smd transistor TRANSISTOR SMD catalog smd transistor g1 MMBT5551 catalog transistors smd transistors list NF marking TRANSISTOR SMD smd transistor 079 SMD TRANSISTOR MARKING 079

    marking G1

    Abstract: No abstract text available
    Text: MMBT5551 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to MMBT5401 Ideal for medium power amplification and switching — MARKING: G1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters)


    Original     		PDF MMBT5551 OT-23 MMBT5401 100MHz marking G1

    MMBT5551

    Abstract: MMBT5551L marking G1 sot23 UTC
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 3 * High Collector-Emitter Voltage: VCEO=160V * High current gain 1 2 SOT-23 *Pb-free plating product number:MMBT5551L ORDERING INFORMATION


    Original     		PDF MMBT5551 OT-23 MMBT5551L MMBT5551-x-AE3-6-R MMBT5551L-x-AE3-6-R QW-R206-010 MMBT5551 MMBT5551L marking G1 sot23 UTC

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 3 * High Collector-Emitter Voltage: VCEO=160V * High current gain 1 2 SOT-23 *Pb-free plating product number:MMBT5551L ORDERING INFORMATION Order Number


    Original     		PDF MMBT5551 OT-23 MMBT5551L MMBT5551-x-AE3-R MMBT5551L-x-AE3-R QW-R206-010

    sot-23 Marking M1F

    Abstract: MMBT5551LT1G MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551 MMBT5551LT1 MMBT5551LT3 MMBT5551LT3G RB SOT23-3
    Text: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBT5550 MMBT5551 Collector −Base Voltage


    Original     		PDF MMBT5550LT1, MMBT5551LT1 MMBT5550 MMBT5551 MMBT5550LT1/D sot-23 Marking M1F MMBT5551LT1G MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551 MMBT5551LT1 MMBT5551LT3 MMBT5551LT3G RB SOT23-3

    On semiconductor date Code sot-23

    Abstract: IC data book free download sot-23 body marking A 4 TO-236 sot-23 Marking G1 Tape and Reel Packaging Specifications Code sot-23 on semiconductor 1N914 transistor data sheet free download G1 SOT-23 marking codes transistors a1 sot-23
    Text: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Value VCEO MMBT5550 MMBT5551 Collectorā-āBase Voltage


    Original     		PDF MMBT5550LT1, MMBT5551LT1 MMBT5550 MMBT5551 MMBT5550LT1/D On semiconductor date Code sot-23 IC data book free download sot-23 body marking A 4 TO-236 sot-23 Marking G1 Tape and Reel Packaging Specifications Code sot-23 on semiconductor 1N914 transistor data sheet free download G1 SOT-23 marking codes transistors a1 sot-23

    marking code g1

    Abstract: G1 TRANSISTOR SOT 23 PNP
    Text: MMBT5551 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT5401 • ESD Capability: Machine Model, C (> 400 V) Human Body Model, 3A (4 to< 8 kV) MECHANICAL DATA • Case: SOT-23 Plastic


    Original     		PDF MMBT5551 MMBT5401) OT-23 2002/95/EC marking code g1 G1 TRANSISTOR SOT 23 PNP

    G1 TRANSISTOR SOT 23 PNP

    Abstract: No abstract text available
    Text: MMBT5551 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT5401 MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)


    Original     		PDF MMBT5551 MMBT5401) OT-23 2002/95/EC OT-323 OT-523 G1 TRANSISTOR SOT 23 PNP

    Untitled

    Abstract: No abstract text available
    Text: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20070515 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5


    Original     		PDF MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520

    marking code g1

    Abstract: sot-23 MARKING CODE G1 G1 TRANSISTOR SOT 23 PNP
    Text: MMBT5551 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT5401 MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃


    Original     		PDF MMBT5551 MMBT5401) OT-23 2002/95/EC 100MHz Jun-2009, KSNR13 MMBT5551 marking code g1 sot-23 MARKING CODE G1 G1 TRANSISTOR SOT 23 PNP

    1N914

    Abstract: MMBT5551 MMBT5551G1
    Text: Zowie Technology Corporation High Voltage Transistor NPN Silicon COLLECTOR 3 3 MMBT5551 BASE 1 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 140 Vdc Collector-Base Voltage VCBO 160 Vdc Emitter-Base Voltage VEBO 6.0 Vdc


    Original     		PDF MMBT5551 OT-23 1N914 MMBT5551 MMBT5551G1

    MMBT5551

    Abstract: No abstract text available
    Text: MMBT5551 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 A 1 Power dissipation Top View V Max 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040


    Original     		PDF MMBT5551 OT-23 01-Jun-2004 MMBT5551

    MMBT5551-G1

    Abstract: MMBT5551
    Text: MMBT5551 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • • NPN Plastic Encapsulate Transistor Collector Current: ICM=0.6A Collector-Base Voltage: V BR CBO=180V Operating And Storage Temperatures –55OC to 150OC


    Original     		PDF MMBT5551 150OC MMBT5551 OT-23 100uAdc, 10uAdc, 10mAdc, 30MHz) MMBT5551-G1

    Untitled

    Abstract: No abstract text available
    Text: MMBT5551 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT5401 MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)


    Original     		PDF MMBT5551 MMBT5401) OT-23 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEo=160V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO 180 160 6 600 350 V V V mA mW °C °C


    OCR Scan     		PDF MMBT5551 625mW 300uS,