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    MMBT540 Price and Stock

    Diodes Incorporated MMBT5401-7-F

    TRANS PNP 150V 0.6A SOT-23-3
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    onsemi MMBT5401LT3G

    TRANS PNP 150V 0.5A SOT23-3
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    DigiKey MMBT5401LT3G Digi-Reel 62,107 1
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    onsemi SMMBT5401LT1G

    TRANS PNP 150V 0.5A SOT23-3
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    DigiKey SMMBT5401LT1G Cut Tape 38,525 1
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    onsemi MMBT5401WT1G

    TRANS PNP 150V 0.5A SC70-3
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    onsemi NSVMMBT5401LT3G

    TRANS PNP 150V 0.5A SOT23-3
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    MMBT540 Datasheets (64)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT5400 Diotec Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflahenmontage Original PDF
    MMBT5400 National Semiconductor General Purpose Amplifiers and Switches- Scan PDF
    MMBT5401 Diodes Short Form Selection Guide Original PDF
    MMBT5401 Diodes MMBT5401LT1, HIGH VOLT, PNPTRAN Original PDF
    MMBT5401 Diodes PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Original PDF
    MMBT5401 Diotec Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflahenmontage Original PDF
    MMBT5401 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
    MMBT5401 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
    MMBT5401 Fairchild Semiconductor PNP General Purpose Amplifier; Package: SOT-23; No of Pins: 3; Container: Tape & Reel Original PDF
    MMBT5401 Galaxy Semi-Conductor Holdings PNP General Purpose Transistor Original PDF
    MMBT5401 Kexin PNP Transistors Original PDF
    MMBT5401 National Semiconductor PNP General Purpose Amplifier Original PDF
    MMBT5401 Sinyork Mini size of Discrete semiconductor elements Original PDF
    MMBT5401 TY Semiconductor TY Equivalent - PNP Transistors - SOT-23 Original PDF
    MMBT5401 Weitron High Voltage PNP Transistors Original PDF
    MMBT5401 Zowie Technology HIGH VOLTAGE TRANSISTOR PNP SILICON Original PDF
    MMBT5401 Diodes Surface Mount Transistors / MOSFET Devices Scan PDF
    MMBT5401 Diodes PNP GENERAL PURPOSE AMPLIFIER Scan PDF
    MMBT5401 Motorola European Master Selection Guide 1986 Scan PDF
    MMBT5401 Motorola PNP silicon high voltage transistor. Scan PDF

    MMBT540 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking code g1

    Abstract: G1 TRANSISTOR SOT 23 PNP
    Text: MMBT5551 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT5401 • ESD Capability: Machine Model, C (> 400 V) Human Body Model, 3A (4 to< 8 kV) MECHANICAL DATA • Case: SOT-23 Plastic


    Original
    MMBT5551 MMBT5401) OT-23 2002/95/EC marking code g1 G1 TRANSISTOR SOT 23 PNP PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW Mechanical Data


    Original
    MMBT5551 MMBT5401) OT-23 OT-23, MIL-STD-202, 100MHz DS30061 PDF

    MMBT5401-G

    Abstract: 1N914
    Text: Zowie Technology Corporation High Voltage Transistor Lead free product Halogen-free type FEATURE MMBT5401GH ƽ We declare that the material of product compliance with RoHS requirements. 3 1 2 SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit V CBO V EBO – 150


    Original
    MMBT5401GH OT-23 MMBT5401-G 1N914 PDF

    2L smd transistor

    Abstract: No abstract text available
    Text: Transistors Transistor T SMD Type Product specification KMBT5401 MMBT5401 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High Voltage Transistors 0.4 3 1 0.55 Pb-Free Packages are Available 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


    Original
    KMBT5401 MMBT5401) OT-23 -10mA 30MHz 2L smd transistor PDF

    marking G1 sot-23

    Abstract: MMBT5401 MMBT5551 MARKING G1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1


    Original
    OT-23 MMBT5551 OT-23 MMBT5401 100MHz MMBT5551 marking G1 sot-23 MMBT5401 MARKING G1 PDF

    MMBT5401W

    Abstract: MMBT5551W
    Text: MMBT5401W PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE A L Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version


    Original
    MMBT5401W OT-323 MMBT5551W -120V, -10mA -50mA -10mA, -50mA, MMBT5401W MMBT5551W PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT5401 High Voltage PNP Transistors COLLECTOR 3 * “G” Lead Pb -Free 3 1 BASE 1 2 2 EMITTER WEITRON http://www.weitron.com.tw SOT-23 MMBT5401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit


    Original
    MMBT5401 OT-23 -10mAdc, -50mAdc, PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components MMBT5401   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • PNP Plastic Encapsulate Transistor Halogen free available upon request by adding suffix "-HF"


    Original
    MMBT5401 150OC OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort High Voltage Transistor MMBT5401LT1 PNP Silicon ON Semiconductor Preferred Device 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –150 Vdc Collector–Base Voltage VCBO –160 Vdc Emitter–Base Voltage VEBO


    Original
    MMBT5401LT1 236AF) PDF

    1N914

    Abstract: MMBT5401LT1G MMBT5401LT3G
    Text: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage


    Original
    MMBT5401LT1G MMBT5401LT1/D 1N914 MMBT5401LT1G MMBT5401LT3G PDF

    MMBT5401

    Abstract: MMBT5400 MMBT5550 MMBT5551
    Text: MMBT5400 / MMBT5401 MMBT5400 / MMBT5401 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-05-16 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case


    Original
    MMBT5400 MMBT5401 OT-23 O-236) UL94V-0 MMBT5400 MMBT5401 MMBT5550 MMBT5551 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT5551 160V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • BVCEO > 160V Ideal for Low Power Amplification and Switching Complementary PNP Type Available MMBT5401 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


    Original
    MMBT5551 MMBT5401) AEC-Q101 OT-23 J-STD-020 MILSTD-202, DS30061 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components MMBT5401   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • PNP Plastic Encapsulate Transistor Collector Current: ICM=0.6A Collector-Base Voltage: V BR CBO=160V


    Original
    MMBT5401 150OC OT-23 PDF

    MMBT5401

    Abstract: No abstract text available
    Text: MMBT5401 PNP Silicon Epitaxial Planar Transistor for high voltage amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage


    Original
    MMBT5401 OT-23 100MHz MMBT5401 PDF

    Untitled

    Abstract: No abstract text available
    Text: RECTRON SEMICONDUCTOR MMBT5401LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 160 V * Operating and storage junction temperature range


    Original
    MMBT5401LT1 OT-23 -55OC 150OC OT-23 MIL-STD-202E PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT5551 SPICE MODEL: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 A · · · · · · Min Max A


    Original
    MMBT5551 OT-23 MMBT5401) OT-23, J-STD-020A MIL-STD-202, DS30061 PDF

    k4m sot 23

    Abstract: MMBT5401 K4m transistor
    Text: SPICE MODEL: MMBT5401 MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT5551 Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version


    Original
    MMBT5401 OT-23 MMBT5551) OT-23, J-STD-020A MIL-STD-202, MMBT5401-7 3000/Tape k4m sot 23 MMBT5401 K4m transistor PDF

    MMBT5401

    Abstract: mark B1 sot23
    Text: MMBT5401 MMBT5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted


    Original
    MMBT5401 OT-23 MMBT5401 mark B1 sot23 PDF

    1N914

    Abstract: MMBT5401LT1
    Text: ON Semiconductort High Voltage Transistor MMBT5401LT1 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –150 Vdc Collector–Base Voltage VCBO –160 Vdc Emitter–Base Voltage VEBO –5.0


    Original
    MMBT5401LT1 r14525 MMBT5401LT1/D 1N914 MMBT5401LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Discontinued Closest Alternative Part is MMBT5401 SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 – SEPTEMBER 95 ✪ COMPLIMENTARY TYPE — BSS64 PARTMARKING DETAIL — BSS63 - T3 BSS63R - T6 BSS63 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE


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    MMBT5401 BSS63 BSS64 BSS63 BSS63R 150oC -25mA, -10mA, PDF

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    Abstract: No abstract text available
    Text: MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT5551 Ideal for Low Power Amplification and Switching


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    MMBT5401 MMBT5551) OT-23 J-STD-020C MIL-STD-202, DS30057 PDF

    2N5401

    Abstract: CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103
    Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N5401 MMBT5401 2N5401 OT-23 CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103 PDF

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    Abstract: No abstract text available
    Text: High Voltage Transistor PNP Silicon MMBT5401LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage Emitter–Base Voltage V CBO


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    MMBT5401LT1 236AB) PDF

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    Abstract: No abstract text available
    Text: MMBT5401WT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO −150 Vdc Collector −Base Voltage


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    MMBT5401WT1G MMBT5401W/D PDF