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    MMBT4401LT1 Price and Stock

    onsemi SMMBT4401LT1G

    TRANS NPN 40V 0.6A SOT23-3
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    DigiKey SMMBT4401LT1G Cut Tape 60,797 1
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    Mouser Electronics SMMBT4401LT1G 238,996
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    Newark SMMBT4401LT1G Cut Tape 23,881 5
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    SMMBT4401LT1G Reel 9,000
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    onsemi MMBT4401LT1G

    TRANS NPN 40V 0.6A SOT23-3
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    DigiKey MMBT4401LT1G Cut Tape 55,126 1
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    MMBT4401LT1G Reel 51,000 3,000
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    MMBT4401LT1G Cut Tape 3,960 1
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    Rochester Electronics MMBT4401LT1G 90 1
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    TME MMBT4401LT1G 1
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    onsemi MMBT4401LT1H

    - Tape and Reel (Alt: MMBT4401LT1H)
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    Avnet Americas MMBT4401LT1H Reel 4 Weeks 1
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    Rochester Electronics MMBT4401LT1H 9,000 1
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    onsemi MMBT4401LT1

    Trans GP BJT NPN 40V 0.6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: MMBT4401LT1)
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    MMBT4401LT1 4,592
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    MMBT4401LT1 2,600
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    MMBT4401LT1 55
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    Rochester Electronics MMBT4401LT1 5,044 1
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    Component Electronics, Inc MMBT4401LT1 13,115
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    onsemi MMBT4401LT1G.

    Bipolar Transistor, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:250Mhzrohs Compliant: Yes |Onsemi MMBT4401LT1G.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MMBT4401LT1G. Reel 3,000
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    MMBT4401LT1 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT4401LT1 Avic Electronics SOT-23 Plastic-Encapsulate Transistors Original PDF
    MMBT4401LT1 Leshan Radio Company General Purpose Transistor(NPN Silicon) Original PDF
    MMBT4401LT1 Motorola SWITCHING TRANSISTOR Original PDF
    MMBT4401LT1 On Semiconductor Small Signal Switching Transistor-NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT4401LT1 On Semiconductor Small SignalSwitch Original PDF
    MMBT4401LT1 On Semiconductor Switching Transistor NPN Original PDF
    MMBT4401LT1 On Semiconductor Switching Transistor NPN Original PDF
    MMBT4401LT1 Yangzhou Yangjie Electronic Plastic-Encapsulate Transistor Scan PDF
    MMBT4401LT1/D On Semiconductor Motorola Preferred Device Original PDF
    MMBT4401LT1-D On Semiconductor Switching Transistor NPN Silicon Original PDF
    MMBT4401LT1G On Semiconductor Switching Transistor(NPN Silicon) Original PDF
    MMBT4401LT1G On Semiconductor Small Signal Switching Transistor-NPN (lead free); Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT4401LT1G On Semiconductor Switching Transistor Original PDF

    MMBT4401LT1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mmbt4401lt1g

    Abstract: MMBT4401LT1 MMBT4401LT3G
    Text: MMBT4401LT1G Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage


    Original
    PDF MMBT4401LT1G OT-23 O-236) MMBT4401LT1/D mmbt4401lt1g MMBT4401LT1 MMBT4401LT3G

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4401LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current 0.6 A ICM: Collector-base voltage


    Original
    PDF OT-23 OT-23 MMBT4401LT1 150mA 500mA MMBT4401LT1 100MHz

    1N916

    Abstract: MMBT4401LT1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon MMBT4401LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage


    Original
    PDF MMBT4401LT1 236AB) Temperatu02 1N916 MMBT4401LT1

    MMBT4401LT1

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Transistor MMBT4401LT1 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc IC 600


    Original
    PDF MMBT4401LT1 r14525 MMBT4401LT1/D MMBT4401LT1

    MMBT4401LT1

    Abstract: MMBT4401LT1G MMBT4401LT3
    Text: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original
    PDF MMBT4401LT1 MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1G MMBT4401LT3

    MMBT4401LT1

    Abstract: DSA0038472
    Text: MOTOROLA Order this document by MMBT4401LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor MMBT4401LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO


    Original
    PDF MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1/D* MMBT4401LT1 DSA0038472

    MMBT4401LT1

    Abstract: MMBT4403LT1
    Text: MMBT4403LT1 PNP Silicon General Purpose Transistor As complementary types the NPN transistor MMBT4401LT1 is recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Collector Base Voltage


    Original
    PDF MMBT4403LT1 MMBT4401LT1 OT-23 4403LT1 10Vdc, 30Vdc, 150mAdc, 15mAdc MMBT4403LT1

    Untitled

    Abstract: No abstract text available
    Text: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original
    PDF MMBT4401LT1

    MMBT4401LT1

    Abstract: marking 2X SOT23
    Text: @vic SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4401LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current 0.6 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


    Original
    PDF OT-23 OT-23 MMBT4401LT1 150mA 500mA MMBT4401LT1 100MHz marking 2X SOT23

    MMBT4401LT1

    Abstract: MMBT4401LT1G MMBT4401LT3 MMBT4401LT3G
    Text: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc


    Original
    PDF MMBT4401LT1 MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1G MMBT4401LT3 MMBT4401LT3G

    MMBT4401LT1

    Abstract: MMBT4401LT1G MMBT4401LT3G
    Text: MMBT4401LT1G Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage


    Original
    PDF MMBT4401LT1G MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1G MMBT4401LT3G

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Switching Transistor MMBT4401LT1 NPN Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc IC


    Original
    PDF MMBT4401LT1 236AB)

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT4401LT1 1. BASE TRANSISTOR(NPN ) 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation PCM : 0.3 W (Tamb=25℃) Collector current ICM : 0.6


    Original
    PDF OT-23 MMBT4401LT1 100MHz 037TPY 950TPY 550REF 022REF

    MBT4401

    Abstract: LMBT44 MBT4401LT1
    Text: WILLAS FM120-M+ MMBT4401LT1 THRU Purpose Transistor FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation ••Batch We declare that


    Original
    PDF FM120-M+ MMBT4401LTHRU FM1200-M+ OD-123+ FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH MBT4401 LMBT44 MBT4401LT1

    MMBT4401LT1

    Abstract: No abstract text available
    Text: MMBT4401LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.225 W (Tamb=25 C) Pluse Drain I CM : 0.6 mA Reverse Voltage V (BR)CBO : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE


    Original
    PDF MMBT4401LT1 OT-23 100mA 500mA MMBT4401LT1

    MMBT4401LT1

    Abstract: No abstract text available
    Text: MMBT4401LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.225 W (Tamb=25 C) Pluse Drain I CM : 0.6 mA Reverse Voltage V (BR)CBO : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE


    Original
    PDF MMBT4401LT1 OT-23 100mA 500mA MMBT4401LT1

    Sc59

    Abstract: SO16 package
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MMBT4401LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO


    Original
    PDF MMBT4401LT1 236AB) 300NOT Sc59 SO16 package

    MMBT4401LT1

    Abstract: MMBT4401LT1G MMBT4401LT3 MMBT4401LT3G wcs10
    Text: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc


    Original
    PDF MMBT4401LT1 MMBT4401LT1/D MMBT4401LT1 MMBT4401LT1G MMBT4401LT3 MMBT4401LT3G wcs10

    Untitled

    Abstract: No abstract text available
    Text: RECTRON SEMICONDUCTOR MMBT4401LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range


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    PDF MMBT4401LT1 OT-23 -55OC 150OC OT-23 MIL-STD-202E

    BT4401LT1

    Abstract: bt4401
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sw itching Transistor MMBT4401LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit v CEO 40 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-Base Voltage vebo 6.0 Vdc


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    PDF MMBT4401LT1 O-236AB) 3b7255 BT4401LT1 bt4401

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    Abstract: No abstract text available
    Text: M AXIMUM RATINGS Symbol Value C o lle ctor-E m itter Voltage Rating v CEO 40 Vdc Collector-Base Voltage v CBO 60 Vdc Em itter-Base Voltage v EBO 6.0 Vdc 'c 600 m Adc Symbol Max Unit Pd 225 mW 1.8 m W:'JC Collector C urrent — C ontinuous Unit MMBT4401LT1*


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    PDF MMBT4401LT1* OT-23 O-236AB)

    BT4401LT1

    Abstract: BT4401
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sw itching Transistor MMBT4401LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 % MAXIMUM RATINGS Rating Symbol C ollector-E m itter Voltage Value Unit VCEO 40 Vdc C ollector-B ase Voltage VCBO 60 Vdc E m itter-B ase Voltage


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    PDF MMBT4401LT1 OT-23 O-236AB) BT4401LT1 BT4401LT1 BT4401

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-£ncapsulate Transistors MMBT4401LT1 T R A N S IS T O R . NPN IK A 'tV H IiS PoWBT dissipai Hill Rcm • 0 .3 W <Tamb=2 5 i'H Collector c jrfe n t Icuul . 0.Ö A C ollector bsse voitag-e V|RR¡raü : 6 0 V Operating and storage iu nctlon lam poraluro rartge


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    PDF OT-23 MMBT44Q1LT1 OT-23 150mA 500mA 100MHi

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    Abstract: No abstract text available
    Text: : S v m Se m i ; 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors MMBT4401LT1 FEATURES Power dissipation PCM : 0.3 W Collector current TRANSISTOR NPN (Tamb=25 °C) I cm • 0.6 A Collector base voltage V (br)cbo :60 V Operating and storage junction temperature range


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    PDF MMBT4401LT1 100MHz OT-23 950TPY 037TPY 550REF 022REF