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    MMBT3906LT Price and Stock

    onsemi SMMBT3906LT1G

    TRANS PNP 40V 0.2A SOT23-3
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    DigiKey SMMBT3906LT1G Cut Tape 103,647 1
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    SMMBT3906LT1G Digi-Reel 103,647 1
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    SMMBT3906LT1G Ammo Pack 53 Weeks, 4 Days 1
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    SMMBT3906LT1G Ammo Pack 16 Weeks, 5 Days 1
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    Mouser Electronics SMMBT3906LT1G 597,717
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    SMMBT3906LT1G Reel 15,000
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    onsemi MMBT3906LT3G

    TRANS PNP 40V 0.2A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT3906LT3G Cut Tape 79,374 1
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    MMBT3906LT3G Digi-Reel 79,374 1
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    MMBT3906LT3G Reel 78,320 10,000
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    TME MMBT3906LT3G 1
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    onsemi SMMBT3906LT3G

    TRANS PNP 40V 0.2A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMMBT3906LT3G Cut Tape 61,569 1
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    SMMBT3906LT3G Digi-Reel 61,569 1
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    SMMBT3906LT3G Reel 50,000 10,000
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    Mouser Electronics SMMBT3906LT3G 114,122
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    Infineon Technologies AG MMBT3906LT1HTSA1

    TRANS PNP 40V 0.2A SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT3906LT1HTSA1 Digi-Reel 29,368 1
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    MMBT3906LT1HTSA1 Reel 27,000 3,000
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    Mouser Electronics MMBT3906LT1HTSA1 31,973
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    Rochester Electronics MMBT3906LT1HTSA1 102,586 1
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    onsemi MMBT3906LT1H

    TRANS PNP 40V 200MA BIPO SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT3906LT1H Digi-Reel 8,284 1
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    MMBT3906LT1H Reel 6,000 3,000
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    MMBT3906LT Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT3906LT1 Infineon Technologies Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR SWITCHING PNP SOT-23 Original PDF
    MMBT3906LT1 Leshan Radio Company General Purpose Transistor(PNP Silicon) Original PDF
    MMBT3906LT1 Motorola GENERAL PURPOSE TRANSISTOR Original PDF
    MMBT3906LT1 On Semiconductor General Purpose Transistor PNP Original PDF
    MMBT3906LT1 On Semiconductor Small Signal General Purpose PNP; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT3906LT1 On Semiconductor General Purpose Transistor Original PDF
    MMBT3906LT1 Various Russian Datasheets Transistor Original PDF
    MMBT3906LT1/D On Semiconductor Motorola Preferred Device Original PDF
    MMBT3906LT1-D On Semiconductor General Purpose Transistor PNP Silicon Original PDF
    MMBT3906LT1G On Semiconductor Small Signal GP PNP Original PDF
    MMBT3906LT1G On Semiconductor Small Signal General Purpose PNP; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT3906LT1HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 40V 0.2A SOT-23 Original PDF
    MMBT3906LT3 On Semiconductor Small Signal GP PNP Original PDF
    MMBT3906LT3 On Semiconductor Small Signal General Purpose PNP; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 Original PDF
    MMBT3906LT3G On Semiconductor Small Signal General Purpose PNP; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 Original PDF
    MMBT3906LT3G On Semiconductor General Purpose Transistor(PNP Silicon) Original PDF

    MMBT3906LT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBT3906LT1G

    Abstract: MMBT3906LT3G 1N916
    Text: MMBT3906LT1G General Purpose Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage


    Original
    PDF MMBT3906LT1G MMBT3906LT1/D MMBT3906LT1G MMBT3906LT3G 1N916

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 SOT—23 TRANSISTOR( PNP ) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter 1.0 Power dissipation PCM :


    Original
    PDF OT-23 MMBT3906LT1 MMBT3906LT1 100MHz 037TPY 950TPY 550REF 022REF

    MMBT3906LT1G

    Abstract: MMBT3906LT3G 1N916
    Text: MMBT3906LT1G General Purpose Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage


    Original
    PDF MMBT3906LT1G MMBT3906LT1/D MMBT3906LT1G MMBT3906LT3G 1N916

    mmbt3904lti

    Abstract: No abstract text available
    Text: RECTRON SEMICONDUCTOR MMBT3906LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904LTI is Recommended * Epitaxial planar die construction SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic


    Original
    PDF MMBT3906LT1 OT-23 MMBT3904LTI OT-23 MIL-STD-202E 125OC -55OC

    1N916

    Abstract: MMBT3906LT1
    Text: ON Semiconductort General Purpose Transistor MMBT3906LT1 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0


    Original
    PDF MMBT3906LT1 r14525 MMBT3906LT1/D 1N916 MMBT3906LT1

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906LT1 Preferred Device General Purpose Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO −40 Vdc Collector −Base Voltage VCBO


    Original
    PDF MMBT3906LT1

    TRANSISTOR MMBT3904LT1

    Abstract: MMBT3906LT1 MMBT3904LT1
    Text: MMBT3904LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT3906LT1 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


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    PDF MMBT3904LT1 MMBT3906LT1 225mW OT-23 TRANSISTOR MMBT3904LT1 MMBT3906LT1 MMBT3904LT1

    TRANSISTOR MMBT3904LT1

    Abstract: No abstract text available
    Text: MMBT3906LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT3904LT1 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= -40V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original
    PDF MMBT3906LT1 MMBT3904LT1 225mW OT-23 TRANSISTOR MMBT3904LT1

    1N916

    Abstract: MMBT3906LT1
    Text: ON Semiconductort General Purpose Transistor MMBT3906LT1 PNP Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO


    Original
    PDF MMBT3906LT1 r14525 MMBT3906LT1/D 1N916 MMBT3906LT1

    motorola MMBT3906LT1

    Abstract: 1N916 MMBT3906LT1
    Text: MOTOROLA Order this document by MMBT3906LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon MMBT3906LT1 COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage


    Original
    PDF MMBT3906LT1/D MMBT3906LT1 MMBT3906LT1/D* motorola MMBT3906LT1 1N916 MMBT3906LT1

    MOTOROLA DATE CODE MARKING

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon MMBT3906LT1 COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage


    Original
    PDF MMBT3906LT1 236AB) MOTOROLA DATE CODE MARKING

    MMBT3904LT1

    Abstract: MMBT3906LT1 MMBT3906LT1 semtech
    Text: MMBT3906LT1 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904LT1 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta=25 oC Symbol Value Unit Collector Base Voltage


    Original
    PDF MMBT3906LT1 MMBT3904LT1 OT-23 100mA MMBT3906LT1 MMBT3906LT1 semtech

    MMBT3904LT1

    Abstract: MMBT3906LT1
    Text: MMBT3906LT1 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904LT1 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta=25 oC Symbol Value Unit Collector Base Voltage


    Original
    PDF MMBT3906LT1 MMBT3904LT1 OT-23 100mA MMBT3906LT1

    1N916

    Abstract: MMBT3906LT1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon MMBT3906LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage


    Original
    PDF MMBT3906LT1 236AB) 1N916 MMBT3906LT1

    3020h

    Abstract: No abstract text available
    Text: ON Semiconductort General Purpose Transistor MMBT3906LT1 PNP Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO


    Original
    PDF MMBT3906LT1 3020h

    MMBT3904LT1

    Abstract: MMBT3906LT1
    Text: MMBT3906LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1.3±0.2 0.5Ref. 0.5Ref. 1 0.97Ref. PNP Epitaxial Silicon Transistor 0.38Ref. MINO.1 0.4 1.9 Collector-Emitter Voltage: V CEO =-40V 3 0.124±0.10 2 Collector Dissipation:Pc=225mW


    Original
    PDF MMBT3906LT1 OT-23 OT-23 97Ref. 38Ref. 225mW MMBT3904LT1. -10mA 100MHz 300uS MMBT3904LT1 MMBT3906LT1

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter


    Original
    PDF OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA 100MHz -10mA

    MMBT3904LT1

    Abstract: MMBT3906LT1
    Text: MMBT3904LT1 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 1.3±0.2 1.9 Collector-Emitter Voltage: V CEO =40V 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 2 Collector Dissipation:Pc=225mW 0.5Ref. 0.38Ref. MINO.1 0.124±0.10 0.5Ref. Complementary Pair with MMBT3906LT1.


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    PDF MMBT3904LT1 OT-23 OT-23 97Ref. 225mW 38Ref. MMBT3906LT1. 100MHz 300uS MMBT3904LT1 MMBT3906LT1

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 SOT-23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.2 A ICM: Collector-base voltage


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    PDF OT-23 MMBT3906LT1 OT-23 -50mA -50mA, -10mA -10mAdc -10mAdc MMBT3906LT1

    marking AT0

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ THRU MMBT3906LT1 General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY Transistors BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers PNP Silicon


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    PDF FM120-M+ MMBT3906LTHRU FM1200-M+ OD-123+ OD-123H FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH marking AT0

    MMBT3906LT3G

    Abstract: 1N916 MMBT3906LT1 MMBT3906LT1G MMBT3906LT3
    Text: MMBT3906LT1 Preferred Device General Purpose Transistor PNP Silicon Features •ăPb-Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collectorā-āEmitter Voltage VCEO -40 Vdc Collectorā-āBase Voltage VCBO


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    PDF MMBT3906LT1 MMBT3906LT1/D MMBT3906LT3G 1N916 MMBT3906LT1 MMBT3906LT1G MMBT3906LT3

    MMBT3904LT1

    Abstract: TRANSISTOR MMBT3904LT1 MMBT3906LT1 rs1kohms
    Text: MMBT3904LT1 NPN Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the PNP transistors MMBT3906LT1 is recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC


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    PDF MMBT3904LT1 MMBT3906LT1 OT-23 MMBT3904LT1 TRANSISTOR MMBT3904LT1 rs1kohms

    1N916

    Abstract: MMBT3906LT1G MMBT3906LT3G
    Text: MMBT3906LT1G General Purpose Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage


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    PDF MMBT3906LT1G MMBT3906LT1/D 1N916 MMBT3906LT1G MMBT3906LT3G

    Untitled

    Abstract: No abstract text available
    Text: : Sv m Se m i ; SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT3906LT1 TRANSISTOR SOT — 23 PNP 1. BASE 2. EM IH E R FEATURES 1 3. COLLECTOR Power d is s ip a tio n Pen : 02 W (Tamb=25 °C) C o lle c to r c u rre n t 1 cm : -0.2 A C o lle c to r base v o lta g e


    OCR Scan
    PDF MMBT3906LT1 OT-23 950TPY 037TPY 550REF 022REF