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    Untitled

    Abstract: No abstract text available
    Text: MM2896HX Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V)0.6 @I(C) (A) (Test Condition)150m


    Original     		PDF MM2896HX Freq120M

    Untitled

    Abstract: No abstract text available
    Text: MM2896HXV Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V)0.6 @I(C) (A) (Test Condition)150m


    Original     		PDF MM2896HXV Freq120M

    MRF660

    Abstract: MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522
    Text: MOTOROLA SC XSTRS/R F 2 bE D • b3b?2S4 GGT0Ô7G 4 ■ T - MIL-Processed Semiconductors (Continued) SELECTOR GUIDE POWER TRANSISTORS TMOS FETs These TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers, and PWM motor


    OCR Scan     		PDF i0fi70 O-254AA MHM5N100HX, MHM12N50HX, MHM25N20HX, MHM25N10HX, MHQ3468HX, MQ3468HX, MHQ4261HX, MQ4261HX, MRF660 MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522