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    MM GLASS LENS PHOTOTRANSISTOR Search Results

    MM GLASS LENS PHOTOTRANSISTOR Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    MD82510/B Rochester Electronics LLC Serial I/O Controller, 1 Channel(s), CMOS, CDIP28, GLASS SEALED, DIP-28 Visit Rochester Electronics LLC Buy
    5043/BEA Rochester Electronics LLC SPDT, 2 Func, 1 Channel, CMOS, CDIP16, GLASS, DIP-16 Visit Rochester Electronics LLC Buy

    MM GLASS LENS PHOTOTRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNZ106 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Fast response : tr = 3.5 µs typ. Narrow directional sensitivity for effective use of light input


    Original     		PDF PNZ106

    PN107

    Abstract: PN108 PNZ0108 PNZ107 PNZ108
    Text: Phototransistors PNZ107, PNZ108 PN107, PN108 Silicon NPN Phototransistors PNZ107 Unit : mm 4.6 0.15 Glass lens 6.3 0.3 For optical control systems Features Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.)


    Original     		PDF PNZ107, PNZ108 PN107, PN108) PNZ107 PNZ0108) 30nductor PN107 PN108 PNZ0108 PNZ107 PNZ108

    PNZ0106

    Abstract: No abstract text available
    Text: Phototransistors PNZ0106 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Fast response : tr = 3.5 µs typ. Narrow directional sensitivity for effective use of light input


    Original     		PDF PNZ0106 PNZ0106

    PNZ0107

    Abstract: PNZ0108
    Text: Phototransistors PNZ0107, PNZ0108 Silicon NPN Phototransistors PNZ0107 Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs typ. 12.7 min.


    Original     		PDF PNZ0107, PNZ0108 PNZ0107 PNZ0108) PNZ0107 PNZ0108

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNA1401L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features 12.7 min. High sensitivity Wide spectral sensitivity, suited for detecting GaAs LED’s Low dark current : ICEO = 5 nA typ.


    Original     		PDF PNA1401L

    phototransistor visible light

    Abstract: PNZ109L
    Text: Phototransistors PNZ109L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting


    Original     		PDF PNZ109L 2856K phototransistor visible light PNZ109L

    PN106

    Abstract: PNZ106 npn phototransistor
    Text: Phototransistors PNZ106 PN106 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Fast response : tr = 3.5 µs (typ.) Narrow directional sensitivity for effective use of light input


    Original     		PDF PNZ106 PN106) PN106 PNZ106 npn phototransistor

    PNZ102

    Abstract: PN102
    Text: Phototransistors PNZ102 PN102 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current : ICEO = 5 nA (typ.)


    Original     		PDF PNZ102 PN102) PNZ102 PN102

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNA1401 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features 12.7 min. High sensitivity Wide spectral sensitivity, suited for detecting GaAs LED’s Low dark current : ICEO = 5 nA typ.


    Original     		PDF PNA1401

    PN109L

    Abstract: PNZ109L
    Text: Phototransistors PNZ109L PN109L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting


    Original     		PDF PNZ109L PN109L) PN109L PNZ109L

    PN101

    Abstract: PNA1401L
    Text: Phototransistors PNA1401L PN101 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features 12.7 min. High sensitivity Wide spectral sensitivity, suited for detecting GaAs LED’s Low dark current : ICEO = 5 nA (typ.)


    Original     		PDF PNA1401L PN101) PN101 PNA1401L

    PNZ0102

    Abstract: No abstract text available
    Text: Phototransistors PNZ0102 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current : ICEO = 5 nA typ. 3-ø0.45±0.05


    Original     		PDF PNZ0102 2856K PNZ0102

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNZ102 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current : ICEO = 5 nA typ. 3-ø0.45±0.05


    Original     		PDF PNZ102

    PN102

    Abstract: PNZ102
    Text: Phototransistors PNZ102 PN102 Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Low dark current: ICEO = 5 nA (typ.)


    Original     		PDF PNZ102 PN102) PN102 PNZ102

    KPT811

    Abstract: KPT811H TF 5367
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Si Phototransistor KPT811H Features • NPN phototransistor packaged in a 3 leads TO-18 for the base connection • Glass lens • Low leak current Dimensions (unit: mm) Applications • Optical switches


    Original     		PDF 2002/95/EC) KPT811H 0905/KPT811H) KPT811 KPT811H TF 5367

    PN106

    Abstract: PNZ106 L1028
    Text: Phototransistors PNZ106 PN106 Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity • Fast response: tr = 3.5 µs (typ.) • Narrow directivity characteristics for effective use of light input


    Original     		PDF PNZ106 PN106) PN106 PNZ106 L1028

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNZ107 PN107 , PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.) • Narrow directivity characteristics for effective use of light input


    Original     		PDF PNZ107 PN107) PNZ108 PN108) PNZ108) PAZ107

    PN101

    Abstract: No abstract text available
    Text: Phototransistors PNA1401L PN101 Silicon planar type Unit: mm φ4.6±0.15 Glass lens 6.3±0.3 For optical control systems • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Low dark current: ICEO = 5 nA (typ.)


    Original     		PDF PNA1401L PN101) PN101

    PN109L

    Abstract: PNZ109L
    Text: Phototransistors PNZ109L PN109L Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Built-in filter to cutoff visible light for reducing ambient light noise


    Original     		PDF PNZ109L PN109L) PN109L PNZ109L

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102 (PN102) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs


    Original     		PDF 2002/95/EC) PNZ102 PN102)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1401L (PN101) Silicon planar type Unit: mm φ4.6±0.15 Glass lens 6.3±0.3 For optical control systems • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs


    Original     		PDF 2002/95/EC) PNA1401L PN101)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1401L (PN101) Silicon planar type Unit: mm φ4.6±0.15 Glass lens 6.3±0.3 For optical control systems • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs


    Original     		PDF 2002/95/EC) PNA1401L PN101)

    PNZ108

    Abstract: PN107 PN108 PNZ107
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107), PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.)


    Original     		PDF 2002/95/EC) PNZ107 PN107) PNZ108 PN108) PAZ107 PNZ108) MTGLR102-001 PNZ108 PN107 PN108 PNZ107

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107), PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.)


    Original     		PDF 2002/95/EC) PNZ107 PN107) PNZ108 PN108) PNZ108) PAZ107