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    MJ2955 POWER TRANSISTOR Search Results

    MJ2955 POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MJ2955 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mj2955

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification MJ2955 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type MJ2955 ·DC current gain -hFE = 20–70 @ IC = 4 Adc ·Excellent safe operating area APPLICATIONS ·Designed for general–purpose


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    MJ2955 -100V; -40Vdc mj2955 PDF

    MJ2955 TRANSISTOR

    Abstract: Mj2955 power transistor mj2955 TO-3 MJ2955 P003N
    Text: MJ2955 SILICON PNPSWITCHING TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJ2955 is a silicon epitaxial-base planar PNP transistors in TO-3 metal case, intented for power switching circuits, series and shunt regulators, output stages and hi-fi amplifiers.


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    MJ2955 MJ2955 MJ2955 TRANSISTOR Mj2955 power transistor mj2955 TO-3 P003N PDF

    MJ2955 TRANSISTOR

    Abstract: mj2955 TO-3 Transistor MJ2955 MJ2955 Mj2955 power transistor
    Text: MJ2955 SILICON PNP SWITCHING TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJ2955 is a silicon epitaxial-base planar PNP transistors in TO-3 metal case, intented for power switching circuits, series and shunt regulators, output stages and hi-fi amplifiers.


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    MJ2955 MJ2955 MJ2955 TRANSISTOR mj2955 TO-3 Transistor MJ2955 Mj2955 power transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for


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    2N3055 MJ2955 200mA 200mA, 400mA 26-July PDF

    mj150* darlington

    Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
    Text: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35


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    2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp PDF

    2n3055

    Abstract: 2N3055G 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 300 watts amplifier circuit diagram 2n3055 application note 2N3055 power circuit MJ2955 2n3055 200 watts amplifier MJ2955 MJ2955 300 watts amplifier
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc


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    2N3055 MJ2955 2N3055/D 2N3055G 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 300 watts amplifier circuit diagram 2n3055 application note 2N3055 power circuit MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier PDF

    MJ3055

    Abstract: MJ3055 equivalent MJ2955 TRANSISTOR MJ2955 Mj3055 transistor MJ3055 audio
    Text: PNP MJ2955 PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER TO-3 ! High Current Capability ! High Power Dissipation ! Complementary to MJ3055 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    MJ2955 MJ3055 MJ3055 MJ3055 equivalent MJ2955 TRANSISTOR MJ2955 Mj3055 transistor MJ3055 audio PDF

    2n3055

    Abstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc


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    2N3055 MJ2955 2N3055/D 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram PDF

    Transistor MJ2955

    Abstract: MJ2955 300 watts amplifier MJ2955 TRANSISTOR MJ2955
    Text: Silicon Power Transistor MJ2955 Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F Complementary PNP Silicon Power Transistor F 15 Amp / 60 V device in TO-204AA [ TO-3 ] package


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    MJ2955 O-204AA Transistor MJ2955 MJ2955 300 watts amplifier MJ2955 TRANSISTOR MJ2955 PDF

    2N3055G

    Abstract: MJ2955 2n3055 200 watts amplifier diagram MJ2955G OF transistor 2n3055 to-3 package MJ-20 TO-204AA transistor 2N30 2N3055 MJ2955 transistor npn 2n3055g
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −


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    2N3055 MJ2955 O-204AA 2N3055G MJ2955 2n3055 200 watts amplifier diagram MJ2955G OF transistor 2n3055 to-3 package MJ-20 TO-204AA transistor 2N30 transistor npn 2n3055g PDF

    2N3055

    Abstract: 2n3055 malaysia MJ2955 2N3055 JAPAN MJ2955 TRANSISTOR 2N3055 specification pnp transistor 2N3055 2N3055 MEXICO st 2n3055 2N3055 schematic diagram
    Text: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ ST PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series


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    2N3055 MJ2955 2N3055 MJ2955. 2n3055 malaysia MJ2955 2N3055 JAPAN MJ2955 TRANSISTOR 2N3055 specification pnp transistor 2N3055 2N3055 MEXICO st 2n3055 2N3055 schematic diagram PDF

    2n3055 motorola

    Abstract: motorola MJ3000 transistor mj3001 mj3000 npn darlington transistor 150 watts MJ3000 circuit 100 amp npn darlington power transistors 2N3055A 2n3055 MJ2500 MJ2501
    Text: MOTOROLA Order this document by MJ2500/D SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501*


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    MJ2500 MJ2501 MJ3000 MJ3001 MJ2500/D* MJ2500/D 2n3055 motorola motorola MJ3000 transistor mj3001 mj3000 npn darlington transistor 150 watts MJ3000 circuit 100 amp npn darlington power transistors 2N3055A 2n3055 MJ2500 MJ2501 PDF

    2N3055

    Abstract: hfe 2n3055 2N3055 ST 2N3055 schematic diagram MJ2955 ST 2N3055 2N3055 MJ2955 2n3055 audio amplifier mj2955 TO-3 2n3055 amplifier
    Text: 2N3055 MJ2955 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 1 2 Description The devices are manufactured in epitaxial-base


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    2N3055 MJ2955 2N3055 JESD97. hfe 2n3055 2N3055 ST 2N3055 schematic diagram MJ2955 ST 2N3055 2N3055 MJ2955 2n3055 audio amplifier mj2955 TO-3 2n3055 amplifier PDF

    2N3055

    Abstract: 2n3055 malaysia MJ2955 2n3055 audio 2N3055 schematic diagram 2N3055 ST st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
    Text: 2N3055 MJ2955 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 1 2 Description The devices are manufactured in epitaxial-base


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    2N3055 MJ2955 2N3055 2n3055 malaysia MJ2955 2n3055 audio 2N3055 schematic diagram 2N3055 ST st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955 PDF

    2n3055 application note

    Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
    Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • • http://onsemi.com


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    2N3055, MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055 PDF

    2N3055

    Abstract: DC variable power with 2n3055 2N3055G power transistor 2n3055 2n3055 amplifier 2N3055 transistor data transistor 2n3055 MJ2955 TRANSISTOR Mj2955 power transistor mj2955 safe operating area
    Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • • http://onsemi.com


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    2N3055, MJ2955 2N3055 2N3055 DC variable power with 2n3055 2N3055G power transistor 2n3055 2n3055 amplifier 2N3055 transistor data transistor 2n3055 MJ2955 TRANSISTOR Mj2955 power transistor mj2955 safe operating area PDF

    2N3055

    Abstract: 2n3055 malaysia pnp transistor 2N3055 MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055 JAPAN 2N3055 series voltage regulator MJ2955 mexico MJ2955 2n3055 circuit diagram
    Text: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series


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    2N3055 MJ2955 2N3055 MJ2955. 2n3055 malaysia pnp transistor 2N3055 MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055 JAPAN 2N3055 series voltage regulator MJ2955 mexico MJ2955 2n3055 circuit diagram PDF

    2n3055 application note

    Abstract: 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − •


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    2N3055 MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit PDF

    2n3055 malaysia

    Abstract: Mj2955
    Text: 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage TAB • Complementary NPN - PNP transistors Applications • General purpose 1 • Audio amplifier 2 Description TO-3 Figure 1.


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    2N3055, MJ2955 2N3055 DocID4079 2n3055 malaysia Mj2955 PDF

    texas 2n3055

    Abstract: BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955* Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


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    2N3055 MJ2955* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C texas 2n3055 BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100 PDF

    pin configuration transistor 2n3055

    Abstract: 2N3055 MJ2955 power transistor 2n3055 Transistor 2n3055 pin configuration transistor mj2955 pin configuration 2N3055 transistor 2N3055
    Text: IL 2N3055 MJ2955 2N3055 MJ2955 NPN POWER TRANSISTOR PNP POWER TRANSISTOR General Purpose Switching and Amplifier Applications DIM MIN A B C D - E F G H J K L M - 6.35 0,96 29,90 10,69 5.20 16,64 11,15 - 3.84 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter


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    2N3055 MJ2955 MJ2955 pin configuration transistor 2n3055 2N3055 MJ2955 power transistor 2n3055 Transistor 2n3055 pin configuration transistor mj2955 pin configuration 2N3055 transistor PDF

    mj2955

    Abstract: No abstract text available
    Text: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series


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    2N3055 MJ2955 2N3055 MJ2955. SC08820 SC08830 P003F mj2955 PDF

    2n3055

    Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR
    Text: COMPLEMENTARY SILICON POWER TRANSISTORS NPN 2N3055 .designed for use in general-purpose amplifier and switching applications PNP MJ2955 Boca Semiconductor Corp. BSC FEATURES: * Power Dissipation - PD = 115W @ Tc = 25°C * DC Current Gain hFE = 20 ~ 70 @ lc = 4.0 A


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    2N3055 MJ2955 MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier 2N3055 curve npn 2n3055 2n3055 collector characteristic curve 2N3055/MJ2955 MJ2955 MJ2955 TRANSISTOR PDF

    MJ2955 TRANSISTOR

    Abstract: pnp transistor 2N3055 2n3055 collector characteristic curve 2N3055 Transistor MJ2955 data transistor 2n3055 MJ2955 2n3055 200 watts amplifier Mj2955 power transistor 2N3055 transistor 2N3055 curve
    Text: SOLID STATE INC. 46 FARRAND STR EE T BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com COMPLEMENTARY SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and switching applications NPN PNP 2N3055 MJ2955 FEA TU RES: * Power Dissipation - PD = 115W @ Tc = 25°C


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    2N3055 MJ2955 2N3055 MJ2955 MJ2955 TRANSISTOR pnp transistor 2N3055 2n3055 collector characteristic curve Transistor MJ2955 data transistor 2n3055 MJ2955 2n3055 200 watts amplifier Mj2955 power transistor 2N3055 transistor 2N3055 curve PDF