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    MJ1000 Price and Stock

    Central Semiconductor Corp CMJ1000-TR-PBFREE

    DIODE CUR REG 100V 1.32MA 500MW
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    DigiKey CMJ1000-TR-PBFREE Digi-Reel 17,140 1
    • 1 $6.1
    • 10 $5.069
    • 100 $6.1
    • 1000 $2.91933
    • 10000 $2.91933
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    CMJ1000-TR-PBFREE Cut Tape 17,140 1
    • 1 $6.1
    • 10 $5.069
    • 100 $6.1
    • 1000 $2.91933
    • 10000 $2.91933
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    CMJ1000-TR-PBFREE Reel 15,000 3,000
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    • 10000 $2.94031
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    Central Semiconductor Corp CMJ1000 TR PBFREE

    DIODE CUR REG 100V 1.32MA 500MW
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    DigiKey CMJ1000 TR PBFREE Reel 15,000 3,000
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    CMJ1000 TR PBFREE Cut Tape 2,140 1
    • 1 $6.1
    • 10 $5.124
    • 100 $4.145
    • 1000 $3.15484
    • 10000 $3.15484
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    CMJ1000 TR PBFREE Digi-Reel 1
    • 1 $6.1
    • 10 $5.124
    • 100 $4.145
    • 1000 $3.15484
    • 10000 $3.15484
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    Mouser Electronics CMJ1000 TR PBFREE 2,771
    • 1 $6.1
    • 10 $5.12
    • 100 $4.15
    • 1000 $3.15
    • 10000 $2.97
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    Central Semiconductor Corp CMJ1000 TR

    DIODE CUR REG 100V 1.32MA 500MW
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    DigiKey CMJ1000 TR Reel
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    Avnet Americas CMJ1000 TR Reel 10 Weeks 3,000
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    Central Semiconductor Corp CMJ1000-TR

    DIODE CUR REG 100V 1.32MA 500MW
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    DigiKey CMJ1000-TR Reel
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    Ohmite Mfg Co MJ1000FE-R52

    RES 100 OHM 1% 1/8W AXIAL
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    DigiKey MJ1000FE-R52 Reel 50,000
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    Find more MJ1000 price and stock on Findchips.com

    MJ1000 Datasheets (195)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJ1000 Central Semiconductor Leaded Power Transistor Darlington Original PDF
    MJ1000 Comset Semiconductors COMPLEMENTARY POWER DARLINGTON Original PDF
    MJ1000 Motorola MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Original PDF
    MJ1000 Central Semiconductor POWER DARLINGTON TRANSISTORS (EPOXY / METAL) Scan PDF
    MJ1000 Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF
    MJ1000 Motorola The European Selection Data Book 1976 Scan PDF
    MJ1000 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ1000 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ1000 Motorola European Master Selection Guide 1986 Scan PDF
    MJ1000 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ1000 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ1000 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJ1000 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJ1000 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJ1000 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MJ1000 Unknown Transistor Replacements Scan PDF
    MJ1000 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ1000 Unknown Cross Reference Datasheet Scan PDF
    MJ1000 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    MJ10000 Motorola 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS Original PDF
    ...

    MJ1000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode 400V 4A

    Abstract: vce 500v NPN Transistor MJ10007
    Text: NPN MJ10007 SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original     		PDF MJ10007 diode 400V 4A vce 500v NPN Transistor MJ10007

    MJ10009

    Abstract: 1N4937 2N3762 MTP3055E
    Text: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,


    Original     		PDF MJ10009 MJ10009 r14525 MJ10009/D 1N4937 2N3762 MTP3055E

    MJ10000

    Abstract: No abstract text available
    Text: NPN MJ10000 SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original     		PDF MJ10000 MJ10000

    Untitled

    Abstract: No abstract text available
    Text: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 MJ10005 FAX: (973) 376-8960 SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode 20 AMPERE NPN SILICON POWER DARLINGTON


    Original     		PDF MJ10005 250Vdc,

    transistor mtp3055e

    Abstract: 1N4937 2N3762 MJ10009 MTP3055E mtp3055
    Text: MOTOROLA Order this document by MJ10009/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ10009*  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON


    Original     		PDF MJ10009/D* MJ10009/D transistor mtp3055e 1N4937 2N3762 MJ10009 MTP3055E mtp3055

    MJ-10000

    Abstract: No abstract text available
    Text: ^E.mi-Condu<itoi ^Pioduch, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON


    Original     		PDF MJ10000 MJ10000 MJ-10000

    MJ10000

    Abstract: MJ10001 1N4937 voltage regulators 6 amp to3
    Text: MOTOROLA Order this document by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,


    Original     		PDF MJ10000/D* MJ10000/D MJ10000 MJ10001 1N4937 voltage regulators 6 amp to3

    MJ1000

    Abstract: MJ1001 MJ900 TRANSISTOR mj900 MJ901 motorola MJ1000
    Text: MOTOROLA Order this document by MJ1000/D SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 MJ1001* Medium-Power Complementary Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE


    Original     		PDF MJ900 MJ901 MJ1000 MJ1001 MJ1000/D* MJ1000/D MJ1000 MJ1001 MJ900 TRANSISTOR mj900 MJ901 motorola MJ1000

    D45H11 equivalent replacement

    Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS


    Original     		PDF MJ10009 Volt32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D45H11 equivalent replacement 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100

    MJ10006

    Abstract: MJ10007 1N4937 mj10006 equivalent
    Text: ON Semiconductort MJ10007 * SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS The MJ10007 Darlington transistor is designed for high–voltage,


    Original     		PDF MJ10007 MJ10007 10Nlit r14525 MJ10007/D MJ10006 1N4937 mj10006 equivalent

    MJ10004

    Abstract: MJ-10004 OB 2268 darlington power transistor 10a
    Text: MJ10004 Darlington Power Transistor Switchmode series NPN Silicon Power Darlington Transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line


    Original     		PDF MJ10004 MJ10004 MJ-10004 OB 2268 darlington power transistor 10a

    MJ10006

    Abstract: No abstract text available
    Text: NPN MJ10006 SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original     		PDF MJ10006 MJ10006

    transistor mj10005

    Abstract: diode 10a 400v NPN Transistor 10A 400V 400V MJ10005 vce 500v NPN Transistor
    Text: NPN MJ10005 SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original     		PDF MJ10005 transistor mj10005 diode 10a 400v NPN Transistor 10A 400V 400V MJ10005 vce 500v NPN Transistor

    MJ10002

    Abstract: No abstract text available
    Text: NPN MJ10002 SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original     		PDF MJ10002 MJ10002

    MJ10006

    Abstract: MJ10007 umi 150 5A 250V 5 amp npn darlington power transistors MJ-10006 MJ-10007
    Text: ÆàMOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10006 MJ10007 The MJ10006 and MJ10007 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


    OCR Scan     		PDF MJ10006 MJ10007 450be umi 150 5A 250V 5 amp npn darlington power transistors MJ-10006 MJ-10007

    MJ10002

    Abstract: MJ10003
    Text: S W ITC H M O D E SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN MJ10002 MJ10003 The MJ10002 and MJ10003 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


    OCR Scan     		PDF MJ10002 MJ10003 MJ10003 f5V-Vcc-250

    kt 1118

    Abstract: MJ10000 MJ10001
    Text: SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS The MJ10000 and MJ10001 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


    OCR Scan     		PDF MJ10000 MJ10001 MJ10000 kt 1118

    MJ900

    Abstract: MJ1000 MJ901 3001 pnp MJ1001 MJ3001 B 817 c MJ2500 MJ2501 2N6053
    Text: - , SGS-THOMSON MJ900 901 1 Ë fKl MILifgTF!Hi ili] S MJ1000/1001 COMPLEMENTARY POWER DARLINGTONS lE S C R lP T IO N tie MJ900, MJ901, MJ1000 and MJ1001 are siii:on epitaxial-base transistors in monolithic Darlingon configuration, and are mounted in Jedec TO-3


    OCR Scan     		PDF MJ1000/1001 MJ900, MJ901, MJ1000 MJ1001 MJ900 MJ901 \/lJl001 3001 pnp MJ3001 B 817 c MJ2500 MJ2501 2N6053

    mj10000

    Abstract: MJ10001
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The M J10000 Darlington transistor is designed for high-voltage, high-speed,


    OCR Scan     		PDF MJ10000 MJ10000 MJ10001

    MJ10007

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007’ Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode •Motorola Pr«f*rr«d Otvlet 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS


    OCR Scan     		PDF MJ10007' MJ10007

    TRANSISTOR mj900

    Abstract: MJ901 MJ900 mj1001
    Text: m o to ro la sc x s trs /r 12E f D I b3b72S4 0004^73 b | 7 ^3 3 - 3 / r - 3 3 '2 8 PNP MJ900, MJ901 MOTOROLA SEMICONDUCTOR NPN TECHNICAL DATA MJ1000, MJ1001 8.0 AMPERE D A R L IN G TO N POWER TRANSISTO RS C O M PLEM EN TA R Y SILICO N M EDIUM -POW ER C O M PLEM ENTARY


    OCR Scan     		PDF b3b72S4 MJ900, MJ901 MJ1000, MJ1001 MJ900 MJ1000* MJ901, MJ1001 TRANSISTOR mj900 MJ901

    MJ10002

    Abstract: MJ10003
    Text: Ü&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN The MJ10002 and MJ10003 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


    OCR Scan     		PDF MJ10002 MJ10003 MJ10003 500ACTERISTICS MJ10002

    MJ10005

    Abstract: 100 amp npn darlington power transistors MJ10004 10 amp npn darlington power transistors
    Text: ¿Z&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10004 MJ10005 The MJ10004 and MJ10005 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


    OCR Scan     		PDF MJ10004 MJ10005 MJ10004, MJ10005, Ic/Ib-25 100 amp npn darlington power transistors 10 amp npn darlington power transistors

    mje2501

    Abstract: MJE370 MJ12005 MJE520 MJ12002 MJ12004 MJ13330 MJ10016 MJ10009 MJ13335
    Text: 0258354 ADVANCED SEM ICOND UCTOR 82D 00055 C f l l f t C O I V 1- — -ADVANCED TilAftiSISTOilU Pd @ Tc=25°C DEVICE TYPE POLARITY NO. MJ10005 NPN MJ10006 NPN MJ10007 NPN MJ10008 NPN MJ10009 NPN MJ10012 NPN MJ10013 NPN MJ10014


    OCR Scan     		PDF 0DD00SS MJ10005 MJ10006 MJ10007 MJ10008 MJ10009 MJ10012 MJ10013 MJ10014 MJ10015 mje2501 MJE370 MJ12005 MJE520 MJ12002 MJ12004 MJ13330 MJ10016 MJ13335