senju solder paste
Abstract: senju printing speed Senju metal solder paste viscometer Rosin Flux Type RMA Senju flux Senju soldering paste solder powder 62Sn36Pb2Ag
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.3 SOLDER SUPPLY PROCESS 2.3.1 SOLDER PASTE 1 Material Composition Soldering paste is mainly made from soldering powder and flux. Soldering powder makes up approximately 80-95wt% of soldering paste
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80-95wt%
63Sn/37Pb)
62Sn/36Pb/2Ag)
senju solder paste
senju printing speed
Senju metal solder paste
viscometer
Rosin Flux Type RMA
Senju flux
Senju
soldering paste
solder powder
62Sn36Pb2Ag
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MITSUBISHI INTEGRATED CIRCUIT PACKAGES reflow
Abstract: MITSUBISHI INTEGRATED CIRCUIT PACKAGES mitsubishi soldering process
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.5 SOLDERING PROCESS There are two soldering methods used in surface mounting: the flow method and reflow method. This section outlines the latter, which is mainstream in the industry. Table 6 REFLOW METHOD EXAMPLES
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Lon13
10sec
30sec
20sec
30sec
MITSUBISHI INTEGRATED CIRCUIT PACKAGES reflow
MITSUBISHI INTEGRATED CIRCUIT PACKAGES
mitsubishi soldering process
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detail in table SURFACE MOUNT COMPONENTS
Abstract: MITSUBISHI INTEGRATED CIRCUIT PACKAGES reflow
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.2 PRINTED CIRCUIT BOARD DESIGN In surface mounting, mount pad designing and board material selection are critical. Mount pad designing may influence solder yield. The substrate material may influence post-soldering reliability.
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MITSUBISHI CAPACITOR
Abstract: paste capacitor SOLDERING REFLOW process mitsubishi SOP mitsubishi
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.1 SURFACE MOUNTING PROCESS SEQUENCE This section shows the surface-mounting process flow chart. There are two soldering methods: the flow method and reflow method. In surface mounting, the latter is usually used.
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Mitsubishi FXos-20MR-ES
Abstract: FXOS-20MT-DSS mitsubishi fx 16 20MR fx 20mr-es POIN FXos mitsubishi triac FXOS-14MR-DS FXOS-20MR-ES FXoS-20MR-ES/UL
Text: FXos MICRO CONTROLLER SERIES Less soldering more cont rol A MITSUBISHI ELECTRIC Y o u r p a r t n e r in i n d u s t r i a l a u t o m a t i o n s y s t e m s THE PERFECT FIT FOR EMBEDDED APPLICATIONS S m a lle s t Footprint Yet The FXos range is the latest addition to the FX fa m ily of ‘b rick’
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14kHz
Mitsubishi FXos-20MR-ES
FXOS-20MT-DSS
mitsubishi fx 16 20MR
fx 20mr-es
POIN
FXos
mitsubishi triac
FXOS-14MR-DS
FXOS-20MR-ES
FXoS-20MR-ES/UL
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MITSUBISHI CM400
Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low
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MITSUBISHI CM400
MITSUBISHI CM300
H BRIDGE inverters circuit diagram using igbt
NPN/transistor NEC K 2500
HALF BRIDGE NPN DARLINGTON POWER MODULE
ups circuit diagram using igbt
IGBT h-series application note
CM30 igbt
CM400
MITSUBISHI cm50-24h
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Ultrasonic Cleaning Transducer
Abstract: Ultrasonic cleaner piezo ULTRASONIC cleaning transducers Ultrasonic cleaner spray nozzles MITSUBISHI IGNITION ultrasonic transducer cleaning Terpene ultrasonic transducer clean circuit of "ultrasonic cleaner"
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.6 CLEANING PROCESS CFCs CFC-113 , Trichlene, 1.1.1-trichloroethane have conventionally been used to clean flux upon completion of component mounting on printed boards. For environmental concerns, however, production and use of these solvents are strictly regulated. Cleaning using an
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CFC-113)
Ultrasonic Cleaning Transducer
Ultrasonic cleaner piezo
ULTRASONIC cleaning transducers
Ultrasonic cleaner
spray nozzles
MITSUBISHI IGNITION
ultrasonic transducer cleaning
Terpene
ultrasonic transducer clean
circuit of "ultrasonic cleaner"
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z63n
Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W
Text: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us ing a 0.8 micron drawn twin well silicon gate process
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M6008X
MDS-GA-02-03-91
z63n
t28000
z65n
07in
M6008
mitsubishi lable
fr1s
MITSUBISHI GATE ARRAY
z66n
R12W
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RD02MUS1
Abstract: RD07MVS1 mitsubishi bipolar rf power pcb warpage after reflow MITSUBISHI APPLICATION NOTE RF POWER
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-034-C Date : 5th Oct. 2006 Prepared : E.Akiyama S.Kametani Confirmed : T.Ohkawa SUBJECT: Recommended mounting & precaution for RD07MVS1&RD02MUS1 SUMMARY: This application note shows recommendation device mount method & precaution for
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AN-GEN-034-C
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RD02MUS1
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AN-GEN-034
507mm.
RD02MUS1
mitsubishi bipolar rf power
pcb warpage after reflow
MITSUBISHI APPLICATION NOTE RF POWER
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pcb warpage after reflow
Abstract: RD02MUS1 RD07MVS1
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-034-D Date : 5th Dec. 2003 Rev.date : 7th Jan. 2010 Prepared : N.Watanabe M.Wada Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Recommended mounted & precaution for RD07MVS1&RD02MUS1
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AN-GEN-034-D
RD07MVS1
RD02MUS1
RD02MUS1.
AN-GEN-034
507mm.
pcb warpage after reflow
RD02MUS1
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shinetsu G746 rohs
Abstract: shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-006-D th Date : 30 May 2001 Rev. date : 26th Dec. 2006 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR MITSUBISHI RF POWER DEVICES GENERAL:
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AN-GEN-006-D
shinetsu G746 rohs
shinetsu G746
G746
sirf iii chip
MITSUBISHI APPLICATION NOTE RF POWER
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shinetsu
Abstract: G746 mitsubishi semiconductors power modules mos semiconductor Mitsubishi Electric
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-006-F Date : 30th May 2001 Rev. date : 12th Jan. 2010 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR
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AN-GEN-006-F
shinetsu
G746
mitsubishi semiconductors power modules mos
semiconductor Mitsubishi Electric
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Z158
Abstract: V i Curve Tracer curve tracer "curve tracer" TRACER SC 6249 MGF-7004
Text: — MITSUBISHI {DISCRETE SC> TI D E | b 5 M ci ñ S cl G O l G l b O 9 1D 1 0 1 6 0 N o v e « - t h l* CT T T MITSUBISHI SEMICONDUCTOR<GaAs MMIO DT-31-25 MGF7004 « to c W » « * 8 GaAs MONOLITHIC MICROWAVE 1C DESCRIPTION OUTLINE DRAWING The M GF7004 is a monolithic microwave integrated circuit
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DT-31-25
MGF7004
GF7004
Z--158
Z158
V i Curve Tracer
curve tracer
"curve tracer"
TRACER SC
6249
MGF-7004
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MGF1802
Abstract: No abstract text available
Text: MITSUBISHI {DISCRETE S O 11 DE |ta4TflS^ DOlQDflM ñ MITSUBISHI SEMICONDUCTOR <GaAs FET> _ 6249829 MITSUBISHI MGF1802 { D I S C R E T E SC I 91D 10084 DT-31-25 FOR MICROWAVE POW ER AMPLIFIERS D E S C R IP T IO N The MGF1802, high-power GaAs FE T with an N-channel
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MGF1802
DT-31-25
MGF1802,
MGF1802
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PM 1207
Abstract: No abstract text available
Text: MITSUBISHI D I S C R E T E SC bl E D 0D154MM Ô Ô4 H i n i T 5 MITSUBISHI SEMICONDUCTOR (GaAs FET) FA01205,FA01206.FA01207 800MHz BAND 0.6W RF POWER HYBRID IC d e s c r ip t io n F A 0 1 2 0 5 , 'F A 0 1 2 0 6 , F A 0 1207 is RF power Hybrid OUTLINE DRAWING
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0D154MM
FA01205,
800MHz
PM 1207
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MGF2116
Abstract: No abstract text available
Text: TL MITSUBISHI {DISCRETE SC> DE 1^34^02=1 OOlDOfl? 3 MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F2116 6249823 MITSUBISHI DISCRETE SC 91D 10087 DT^-CS FOR M ICROW AVE PO W ER A M P LIFIER S DESCRIPTIO N The MGF2116, tiigh-power GaAs F E T with an N-channel Schottky gate, is designed for use in S- to Ku-band ampli
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F2116
MGF2116,
MGF2116
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G746
Abstract: No abstract text available
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-006-G Date : 30th May 2001 Rev. date : 22th.Jun. 2010 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR
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AN-GEN-006-G
G746
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MGFK25M4045
Abstract: No abstract text available
Text: MITSUBISHI {DISCRETE SC> DElbaMTfiSi 001013^ 7 1 r-3?-¿>5 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK25M404S FOR M ICR O W AVE P O W E R A M P L IF IE R S IN TER N A LLY MATCHED DESCRIPTION The MGFK25M4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0 ~ 14.5
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MGFK25M404S
MGFK25M4045
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DC bias of gaas FET
Abstract: transistor GaAs FET s parameters
Text: MITSUBISHI {DISCRETE SC> TÏ » F | b S 4 ciflST □D1D113 □ MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2312 6 2 4 9 8 2 9 MITSUBI SH I DISCRETE SC 9 1D 10113 0 7 :3 1'£>5 FOR MICROW AVE PO W ER AM PLIFIERS D E S C R IP T IO N The MGF2312 is designed for power amplifiers and oscilla
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D1D113
MGF2312
MGF2312
DC bias of gaas FET
transistor GaAs FET s parameters
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MGF7003
Abstract: maxim curve tracer MGF-7003
Text: MITSUBISHI {DISCRETE S O TI ]>Er|L:24cia5ti QQlQlSb 7 T o T- 31-3S M IT SU BISH I SEMICONDUCTOR<GaAs M M IO MGF7003 « -aie" s»*'“ « S 'í « 1- * 00\ a_Ü“ í^ m ' ’15 N S“Í Ca % G aA s M O N O LIT H IC M IC R O W A V E IC DESCRIPTIO N O UTLINE DRAW ING
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31-3S
MGF7003
MGF7003
maxim curve tracer
MGF-7003
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mitsubishi mgf
Abstract: curve tracer
Text: MITSUBISHI {DISCRETE S O 6 2 4 9 82 9 MITSUBISHI TÎ » F | t . 5 4 c]flEci 001D133 t <D ISCRETE SC MITSUBISHI SEMICONDUCTOR <GaAs FET> 33 o re U N " n a r V 9,0 7MGFX34S9398 101 Nov0 n«ämaV«e« FOR MICROWAVE PO W ER AM PLIFIERS INTERNALLY M ATCHED Som® Pai
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001D133
MGFX34S9398
mitsubishi mgf
curve tracer
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI {DISCRETE SC> TL DE | bSMTfiH'ì D O l O ll b MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2324 6249829 MITSUBISHI D I S C R E T E SC 9 1D 1 O 1 1 6 D T-& -Ò S FOR MICROW AVE PO W ER AM PLIFIERS DESCRIPTION The M G F 2 3 2 4 is designed fo r power am plifiers and oscilla
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MGF2324
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F2117
Abstract: MGF2117 GF2117
Text: TI MITSU BI SH I {DISCRETE S O DE Q0 1 Q D T 0 3 | ~ MITSUBISHI SEMICONDUCTOR <GaAs FET> 6249829 MITSUBISHI D I S C R E T E SC MGF2117 DT-&-Ù5 9 1 D 10090 FOR M ICROW AVE PO W ER A M P LIFIE R S DESCRIPTION The M GF2117, high-power GsAs F E T with an N-channel
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MGF2117
GF2117,
F2117
MGF2117
GF2117
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gf220
Abstract: No abstract text available
Text: MITSUBISHI {DISCRETE SC> TL I F | 1,54^02^ DD1D11D 5 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2205 £249 82 9 MITSUB I SH I DISCRETE SC) 91D 10110 D FOR MICROW AVE PO W ER AM PLIFIERS DESCRIPTION OUTLINE DRAWING Unit:millimeters(inches) The M G F 2 2 0 5 , high-power GaAs F E T w ith an N-channel
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DD1D11D
MGF2205
gf220
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