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    MITSUBISHI LOT MARKING Search Results

    MITSUBISHI LOT MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MITSUBISHI LOT MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ls00

    Abstract: M74LS00P mitsubishi marking lot number mitsubishi marking m74ls00 mitsubishi lot marking marking mitsubishi MITSUBISHI marking example
    Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES MARKING SPECIFICATIONS 4. MARKING SPECIFICATIONS 4.1 GENERAL SPECIFICATIONS Mitsubishi ICs are marked with the device number, the lot number, and the Mitsubishi logo . We include the complete device number on all ICs except such space limited packages as 8-pin DIP and SOPs and so on. Available space determine the shortened form.


    Original     		PDF M74LS00P ls00 M74LS00P mitsubishi marking lot number mitsubishi marking m74ls00 mitsubishi lot marking marking mitsubishi MITSUBISHI marking example

    gaas fet marking B

    Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
    Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source


    Original     		PDF QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"

    ss 6616

    Abstract: 9316 ROM transistor A916 IC B316 transistor d716 b816 BA 8A16 8316 rOM transistor B616 b716 transistor
    Text: MITSUBISHI MICROCOMPUTERS M35053-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • • • • • • • • • • • • • • • • • • APPLICATION TV, VCR, Movie REV.1.1 CP1 ← TESTA CS SCK SIN AC → → ↔


    Original     		PDF M35053-XXXSP/FP 20P4B M35053-XXXFP M35053-XXXSP/FP 20P2Q-A 20-PIN ss 6616 9316 ROM transistor A916 IC B316 transistor d716 b816 BA 8A16 8316 rOM transistor B616 b716 transistor

    ba 4916

    Abstract: transistor fp 1016 C516 diode marking code HP2 SP 8616 9C016 BA 8A16 1D16 eprom 2516 IC 4016 PIN DIAGRAM
    Text: MITSUBISHI MICROCOMPUTERS M35052-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • • • • • • • • • • • • • • • • • • APPLICATION TV, VCR, Movie REV.1.1 CP1 ← TESTA CS SCK SIN AC → → ↔


    Original     		PDF M35052-XXXSP/FP 20P4B M35052-XXXFP M35052-XXXSP/FP 20P2Q-A 20-PIN ba 4916 transistor fp 1016 C516 diode marking code HP2 SP 8616 9C016 BA 8A16 1D16 eprom 2516 IC 4016 PIN DIAGRAM

    FR4007

    Abstract: 25f16 fr2007 FR1117 FR6007 FR1003 FR4004 FR4000 FR4001 FR5005
    Text: MITSUBISHI MICROCOMPUTERS M35047-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • Screen composition . 24 characters ✕ 12 lines • Number of characters displayed . 288 Max.


    Original     		PDF M35047-XXXSP/FP M35047 M35047-XXXSP/FP FR4007 25f16 fr2007 FR1117 FR6007 FR1003 FR4004 FR4000 FR4001 FR5005

    ra33h1516m1

    Abstract: RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


    Original     		PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF

    RA33H1516M1

    Abstract: RA33H1516M1-101 VDD1015
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


    Original     		PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RA33H1516M1-101 VDD1015

    PU01

    Abstract: tda 4280 LXY Series TCA 720 20P2N-A M34280E1FP M34280E1GP M34280M1 M34280M1-XXXFP M34280M1-XXXGP
    Text: MITSUBISHI MICROCOMPUTERS 4280 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for INFRARED REMOTE CONTROL TRANSMITTERS DESCRIPTION The 4280 Group is a 4-bit single-chip microcomputer designed with CMOS technology for remote control transmitters. The 4280 Group has 7 carrier waves and enables fabrication of 8 x 7 key


    Original     		PDF 20P2E/F-A PU01 tda 4280 LXY Series TCA 720 20P2N-A M34280E1FP M34280E1GP M34280M1 M34280M1-XXXFP M34280M1-XXXGP

    transistor fp 1016

    Abstract: 02A16 3-digit object counter circuit 6B16 mitsubishi diode catalog rom 6116 rom 6216 M35071 M35071-XXXFP M35071-XXXSP
    Text: MITSUBISHI MICROCOMPUTERS M35071-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • Screen composition . 24 characters x 12 lines × 2 pages • Number of characters displayed . 288 Max. × 2 pages


    Original     		PDF M35071-XXXSP/FP M35071-XXXSP/FP 20P2Q-A 20-PIN transistor fp 1016 02A16 3-digit object counter circuit 6B16 mitsubishi diode catalog rom 6116 rom 6216 M35071 M35071-XXXFP M35071-XXXSP

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF MGF4953A MGF4953A 12GHz 000pcs/reel

    25f16

    Abstract: transistor fp 1016 FRN075 object counter circuit using IC 4033 FR1117 marking N03B 4116 ram ic FRn000 FR4007 M35047-XXXSP
    Text: MITSUBISHI MICROCOMPUTERS M35047-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • Screen composition . 24 characters ✕ 12 lines • Number of characters displayed . 288 Max.


    Original     		PDF M35047-XXXSP/FP M35047-XXXSP M35047-XXXSP/FP 20P2Q-A 20-PIN 25f16 transistor fp 1016 FRN075 object counter circuit using IC 4033 FR1117 marking N03B 4116 ram ic FRn000 FR4007 M35047-XXXSP

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4934CM MGF4934CM 12GHz MGF4934CM-75 15000pcs/reel

    RF power amplifier 10mW

    Abstract: RA33H1516M1 473 marking code transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


    Original     		PDF RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RF power amplifier 10mW 473 marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101


    Original     		PDF MGF4941CL MGF4941CL AEC-Q101 4000pcs

    BA 4916

    Abstract: transistor fp 1016 9316 ROM BA 8416 BA 7516 EA 7316 mitsubishi diode catalog 6F16 transistor c516 c516 transistor
    Text: MITSUBISHI MICROCOMPUTERS M35070-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • Screen composition . 24 characters x 12 lines × 2 pages • Number of characters displayed . 288 Max. × 2 pages


    Original     		PDF M35070-XXXSP/FP M35070-XXXSP/FP 20P2Q-A 20-PIN BA 4916 transistor fp 1016 9316 ROM BA 8416 BA 7516 EA 7316 mitsubishi diode catalog 6F16 transistor c516 c516 transistor

    PU01

    Abstract: 20P2N-A M34280E1FP M34280E1GP M34280M1 M34280M1-XXXFP M34280M1-XXXGP TCA 720
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF 20P2E/F-A PU01 20P2N-A M34280E1FP M34280E1GP M34280M1 M34280M1-XXXFP M34280M1-XXXGP TCA 720

    rd70huf2

    Abstract: RD70 HUF2 MITSUBISHI RF POWER MOS FET rd70 Mitsubishi Plastics RD70HUF transistor c33
    Text: < Silicon RF Power MOS FET Discrete > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' RD70 Lot HUF2 No-G ○ 6 9 a 7 8 3.63 3.10 4 3.61 2.40 3 2 1 RD70HUF2 13.50 ○ 8 Lot No-G 7 ○ 6 5 APPLICATION


    Original     		PDF RD70HUF2 175MHz, 530MHz, RD70HUF2 75Wtyp, 530MHz 84Wtyp, 175MHz Oct2011 RD70 HUF2 MITSUBISHI RF POWER MOS FET rd70 Mitsubishi Plastics RD70HUF transistor c33

    RD70 HUF2

    Abstract: W105 TRANSISTOR ML1 RD70HUF2
    Text: < Silicon RF Power MOS FET Discrete > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' 0.60 2 FEATURES 3 RD70 Lot HUF2 No-G 6 9 a 4 3.61 2.40 3 2 1 6 5 RD70HUF2 13.50 Lot No-G 8 7 APPLICATION For output stage of high power amplifiers in VHF/UHF


    Original     		PDF RD70HUF2 175MHz, 530MHz, RD70HUF2 RD70 HUF2 W105 TRANSISTOR ML1

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)


    Original     		PDF MGF4963BL MGF4963BL 20GHz 4000pcs

    transistor marking 2A H

    Abstract: mitsubishi vcb 2sc4357 mitsubishi symbol marking La 4108
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4357 FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4357 is a silicon NPN epitaxial type transistor designed for high collector current, for high voltage.


    OCR Scan     		PDF 2SC4357 2SC4357 500mW transistor marking 2A H mitsubishi vcb mitsubishi symbol marking La 4108

    TDA 5020

    Abstract: 40555 Transistor d27c128 D27C64 mask ram bma 023 LXY Series marking code SKs 20P2N-A FAG 29 diode
    Text: MITSUBISHI MICROCOMPUTERS 4280 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for INFRARED REMOTE CONTROL TRANSMITTERS DESCRIPTION • C arrier wave output function port CARR The 4280 Group is a 4-bit single-chip microcomputer designed with CMOS technology for remote control transmitters. The 4280


    OCR Scan     		PDF 20P2E/F-A TDA 5020 40555 Transistor d27c128 D27C64 mask ram bma 023 LXY Series marking code SKs 20P2N-A FAG 29 diode

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI ICs TV M52766FP PLL SPLIT V IF / SIF DESCRIPTION The M52766FP is a semiconducttor 1C with PLL system of VIF/ SIF. The circuit includes video UF amplifier,PLL video detector, IFAGC,RFAGC,VCO, AFT, LOCK DET,EQ,REG,QIFamplifier,QIF detector,QIF AGC,LIM,FM


    OCR Scan     		PDF M52766FP M52766FP M5M4V4160J 4194304-BIT 262144-WORD 16-BIT

    mitsubishi weekly code

    Abstract: det9 MITSUBISHI LOT NO. CODE MARKING SG22
    Text: MITSUBISHI ICs TV M52766FP PLL SPLIT VIF / SIF DESCRIPTION The M52766FP is a semiconductor 1C with PLL system of VIF/SIF. The circuit includes video UF amplifier,PLL video detector,IFAGC.RFAGC,VCO,AFT,LOCK DET,EQ,REG,QIFamplifier,QIF detector,QIF AGC,LIM,FM


    OCR Scan     		PDF M52766FP M52766FP 13pin) mitsubishi weekly code det9 MITSUBISHI LOT NO. CODE MARKING SG22

    V23L HITACHI

    Abstract: mitsubishi Lot number constitution PAL 007 a audio amplifier ic mitsubishi weekly code marking code V9 M52766FP V17L marking sg22 mitsubishi running code mitsubishi top side marking
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    OCR Scan     		PDF