74LS04D
Abstract: mitsubishi lot code HBM 00-01 74ls04d datasheet TI Ji Bipolar LINEAR TECHNOLOGY date code JI Bipolar 500 mold compound JI Linear Bipolar Products TL 170C
Text: TEXAS INSTRUMENTS Final Notification of Mitsubishi Silicon of America MSA Second Source Wafer Qualification for Starting 125mm Substrates in Sherman, Texas Wafer Fab July 22, 1999 Abstract The Texas Instruments Wafer Fabrication Facility in Sherman, Texas (SFAB) has qualified Mitsubishi
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125mm
85C85
260deg
74LS04D
mitsubishi lot code
HBM 00-01
74ls04d datasheet
TI Ji Bipolar
LINEAR TECHNOLOGY date code
JI Bipolar
500 mold compound
JI Linear Bipolar Products
TL 170C
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MGF1200
Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.
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MGF1102
MGF1302
MGF1303B
MGFI323
MGF1402B
MGFI412B
MGF1403B
MGF1423B
MGFI425B
MGFI902B
MGF1200
MGF4310
MGF1100
MGF1412
MGF4301
MGF1304
MGF7003
MGF4305A
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block diagram for RF transmitter AND RECEIVER op
Abstract: MF-10KDS-R13-060 MF-10KDS-R13-061 MF-10KDS-R13-070 MF-10KDS-T12-060 MF-10KDS-T12-061 MF-10KDS-T12-070 MF-10KDS-T12-071 STM64 MITSUBISHI LOT NO. CODE
Text: MITSUBISHI OPTICAL DEVICES MF-10KDS-T12-06x/07x MF-10KDS-R13-06x/07x SONET/SDH TRANSMITTER & RECIEVER DESCRIPTION Th is p rod u ct is d e si gn e d t o pr o vi de hi g h op tic a l pe r fo rma n ce f or SD H S TM- 6 4 /S O NE T O C-1 9 2 . Trans mitte r uses co oled lase r in a butterfly pa ckag e
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MF-10KDS-T12-06x/07x
MF-10KDS-R13-06x/07x
15deg
100ohm
50ohm
20psec.
25psec.
block diagram for RF transmitter AND RECEIVER op
MF-10KDS-R13-060
MF-10KDS-R13-061
MF-10KDS-R13-070
MF-10KDS-T12-060
MF-10KDS-T12-061
MF-10KDS-T12-070
MF-10KDS-T12-071
STM64
MITSUBISHI LOT NO. CODE
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ss 6616
Abstract: 9316 ROM transistor A916 IC B316 transistor d716 b816 BA 8A16 8316 rOM transistor B616 b716 transistor
Text: MITSUBISHI MICROCOMPUTERS M35053-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • • • • • • • • • • • • • • • • • • APPLICATION TV, VCR, Movie REV.1.1 CP1 ← TESTA CS SCK SIN AC → → ↔
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M35053-XXXSP/FP
20P4B
M35053-XXXFP
M35053-XXXSP/FP
20P2Q-A
20-PIN
ss 6616
9316 ROM
transistor A916
IC B316
transistor d716
b816
BA 8A16
8316 rOM
transistor B616
b716 transistor
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ba 4916
Abstract: transistor fp 1016 C516 diode marking code HP2 SP 8616 9C016 BA 8A16 1D16 eprom 2516 IC 4016 PIN DIAGRAM
Text: MITSUBISHI MICROCOMPUTERS M35052-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • • • • • • • • • • • • • • • • • • APPLICATION TV, VCR, Movie REV.1.1 CP1 ← TESTA CS SCK SIN AC → → ↔
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M35052-XXXSP/FP
20P4B
M35052-XXXFP
M35052-XXXSP/FP
20P2Q-A
20-PIN
ba 4916
transistor fp 1016
C516
diode marking code HP2
SP 8616
9C016
BA 8A16
1D16
eprom 2516
IC 4016 PIN DIAGRAM
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TDA 5020
Abstract: 40555 Transistor d27c128 D27C64 mask ram bma 023 LXY Series marking code SKs 20P2N-A FAG 29 diode
Text: MITSUBISHI MICROCOMPUTERS 4280 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for INFRARED REMOTE CONTROL TRANSMITTERS DESCRIPTION • C arrier wave output function port CARR The 4280 Group is a 4-bit single-chip microcomputer designed with CMOS technology for remote control transmitters. The 4280
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20P2E/F-A
TDA 5020
40555 Transistor
d27c128
D27C64
mask ram
bma 023
LXY Series
marking code SKs
20P2N-A
FAG 29 diode
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FR4007
Abstract: 25f16 fr2007 FR1117 FR6007 FR1003 FR4004 FR4000 FR4001 FR5005
Text: MITSUBISHI MICROCOMPUTERS M35047-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • Screen composition . 24 characters ✕ 12 lines • Number of characters displayed . 288 Max.
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M35047-XXXSP/FP
M35047
M35047-XXXSP/FP
FR4007
25f16
fr2007
FR1117
FR6007
FR1003
FR4004
FR4000
FR4001
FR5005
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ra33h1516m1
Abstract: RF power amplifier 10mW RF MOSFET MODULE RF MODULE CIRCUIT DIAGRAM for channel 4 MOSFET Amplifier Module v 33w marking transistor RF
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RF power amplifier 10mW
RF MOSFET MODULE
RF MODULE CIRCUIT DIAGRAM for channel 4
MOSFET Amplifier Module
v 33w
marking transistor RF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21993-4 INTEGRATED POWER FUNCTIONS 600V/10A low-loss CSTBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
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PS21993-4/-4A/-4C/-4W
PS21993-4
00V/10A
E80276
100ns
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21994-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21994-4 INTEGRATED POWER FUNCTIONS 600V/15A low-loss CSTBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
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PS21994-4/-4A/-4C/-4W
PS21994-4
00V/15A
E80276
100ns
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capacitor 22n
Abstract: denso ul ZENER DIODE 24V denso E80276
Text: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4E/-4AE/-4CE/-4EW TRANSFER-MOLD TYPE INSULATED TYPE PS21993-4E INTEGRATED POWER FUNCTIONS 600V/8A low-loss CSTBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
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PS21993-4E/-4AE/-4CE/-4EW
PS21993-4E
00V/8A
E80276
100ns
capacitor 22n
denso ul
ZENER DIODE 24V
denso
E80276
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PS21994-4
Abstract: denso inverter ps21994 E80276 capacitor 22n
Text: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21994-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21994-4 INTEGRATED POWER FUNCTIONS 600V/15A low-loss CSTBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
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PS21994-4/-4A/-4C/-4W
PS21994-4
00V/15A
E80276
100ns
PS21994-4
denso inverter
ps21994
E80276
capacitor 22n
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RA33H1516M1
Abstract: RA33H1516M1-101 VDD1015
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RA33H1516M1-101
VDD1015
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PU01
Abstract: tda 4280 LXY Series TCA 720 20P2N-A M34280E1FP M34280E1GP M34280M1 M34280M1-XXXFP M34280M1-XXXGP
Text: MITSUBISHI MICROCOMPUTERS 4280 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER for INFRARED REMOTE CONTROL TRANSMITTERS DESCRIPTION The 4280 Group is a 4-bit single-chip microcomputer designed with CMOS technology for remote control transmitters. The 4280 Group has 7 carrier waves and enables fabrication of 8 x 7 key
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20P2E/F-A
PU01
tda 4280
LXY Series
TCA 720
20P2N-A
M34280E1FP
M34280E1GP
M34280M1
M34280M1-XXXFP
M34280M1-XXXGP
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ZENER DIODE 24V
Abstract: PS21997-4
Text: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21997-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21997-4 INTEGRATED POWER FUNCTIONS 600V/30A low-loss CSTBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
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PS21997-4/-4A/-4C/-4W
PS21997-4
00V/30A
E80276
AC100V
100ns
ZENER DIODE 24V
PS21997-4
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denso inverter
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21997-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21997-4 INTEGRATED POWER FUNCTIONS 600V/30A low-loss CSTBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
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PS21997-4/-4A/-4C/-4W
PS21997-4
00V/30A
E80276
100ns
denso inverter
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capacitor 22n
Abstract: ZENER DIODE 24V PS21997-4 ps21997 mitsubishi semiconductors power modules E80276 dual-in-line package intelligent power module 600v 30a mitsubishi dc motor control
Text: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21997-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21997-4 INTEGRATED POWER FUNCTIONS 600V/30A low-loss CSTBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
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PS21997-4/-4A/-4C/-4W
PS21997-4
00V/30A
E80276
100ns
capacitor 22n
ZENER DIODE 24V
PS21997-4
ps21997
mitsubishi semiconductors power modules
E80276
dual-in-line package intelligent power module
600v 30a
mitsubishi dc motor control
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4E/-4AE/-4CE/-4EW TRANSFER-MOLD TYPE INSULATED TYPE PS21993-4E INTEGRATED POWER FUNCTIONS 600V/8A low-loss CSTBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
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PS21993-4E/-4AE/-4CE/-4EW
PS21993-4E
00V/8A
E80276
100ns
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denso power module
Abstract: denso denso ul E80276 zener diode c1
Text: MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE PS21993-4 INTEGRATED POWER FUNCTIONS 600V/10A low-loss CSTBT inverter bridge for three phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
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PS21993-4/-4A/-4C/-4W
PS21993-4
00V/10A
E80276
100ns
denso power module
denso
denso ul
E80276
zener diode c1
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PDF
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25f16
Abstract: transistor fp 1016 FRN075 object counter circuit using IC 4033 FR1117 marking N03B 4116 ram ic FRn000 FR4007 M35047-XXXSP
Text: MITSUBISHI MICROCOMPUTERS M35047-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • Screen composition . 24 characters ✕ 12 lines • Number of characters displayed . 288 Max.
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M35047-XXXSP/FP
M35047-XXXSP
M35047-XXXSP/FP
20P2Q-A
20-PIN
25f16
transistor fp 1016
FRN075
object counter circuit using IC 4033
FR1117
marking N03B
4116 ram ic
FRn000
FR4007
M35047-XXXSP
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PDF
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RF power amplifier 10mW
Abstract: RA33H1516M1 473 marking code transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to
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RA33H1516M1
154-162MHz
RA33H1516M1
33watt
162MHz
RF power amplifier 10mW
473 marking code transistor
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PDF
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mitsubishi weekly code
Abstract: MARK V3F variable frequency circuit diagram M52765FP TP10
Text: MITSUBISHI ICs TV M52765FP PLL-SPLIT VIF/SIF 1C INTEGRATED CIRCUIT M52765FP 1 . Model Number: VIF am plification, Picture detection, APC detection, IF / RF AGC, VCO, AFT, Lock detection, Analog SW, SIF am plification, QIF am plification, QIF detection, QIF AGC, SIF limiter, FM detection._
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M52765FP
G465098_
75MHz,
25MHz,
95dBp
DG27577
mitsubishi weekly code
MARK V3F
variable frequency circuit diagram
M52765FP
TP10
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-164MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 164MHz range. The battery can be connected directly to the drain of the
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RA33H1516M1
154-164MHz
RA33H1516M1
33watt
164MHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI ICs TV M52766FP PLL SPLIT V IF / SIF DESCRIPTION The M52766FP is a semiconducttor 1C with PLL system of VIF/ SIF. The circuit includes video UF amplifier,PLL video detector, IFAGC,RFAGC,VCO, AFT, LOCK DET,EQ,REG,QIFamplifier,QIF detector,QIF AGC,LIM,FM
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M52766FP
M52766FP
M5M4V4160J
4194304-BIT
262144-WORD
16-BIT
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