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    MITSUBISHI 2SC2053 Search Results

    MITSUBISHI 2SC2053 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


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    M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original
    STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    2sc2053

    Abstract: 2Sc2053 equivalent
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2053 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for RF amplifiers on VHF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES


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    2SC2053 2SC2053 175MHz 2Sc2053 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC20S3 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for RF amplifiers on VHF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES


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    2SC20S3 2SC2053 175MHz 2SC2053 PDF

    2SC2053

    Abstract: transistor 2sc2053 mitsubishi 2sc2053 transistor 8d 2SC205 TRANSISTOR 1P mitsubishi vcb RF POWER TRANSISTOR NPN 1P transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2053 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for R F amplifiers on V H F band mobile radio applications. Dimensions in mm 0 5 .1 M A X


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    2SC2053 175MHz 2SC2053 transistor 2sc2053 mitsubishi 2sc2053 transistor 8d 2SC205 TRANSISTOR 1P mitsubishi vcb RF POWER TRANSISTOR NPN 1P transistor PDF

    2SC2053

    Abstract: RF POWER TRANSISTOR NPN COIL 1mH
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC20S3 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION O U TLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for RF amplifiers on V H F band mobile radio applications. Dimensions in mm 0 5 .1 M A X


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    2SC2053 175MHz 8-j12 175MHz RF POWER TRANSISTOR NPN COIL 1mH PDF

    2SC2053

    Abstract: transistor 2sc2053 2Sc2053 equivalent 8Q transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2053 NPN E P IT A X IA L P LA N A R T Y P E DESCRIPTION O U T LIN E DRAW ING 2SC2053 is a silicon NPN epitaxial planar type transistor de­ signed for RF amplifiers on V H F band mobile radio applications. Dim ensions in m m


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    2SC2053 175MHz 175MHz 2SC2053 75MHz transistor 2sc2053 2Sc2053 equivalent 8Q transistor PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF