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    MIP2 JAPAN Search Results

    MIP2 JAPAN Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    CC1100ERGPT Texas Instruments Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 Visit Texas Instruments Buy
    CC1100ERGPR Texas Instruments Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 Visit Texas Instruments Buy

    MIP2 JAPAN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MIP16

    Abstract: MIP704
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP704 Silicon MOS IC • Features ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated


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    PDF 2002/95/EC) MIP704 MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP18£ MIP01£ MIP02£ MIP16 MIP704

    MIP9E01

    Abstract: MIP9E02 MIP0222 MIP0222SU matsua CHARGER mip0221
    Text: Intelligent Power Devices IPDs MIP0221SU, MIP0222SU Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V) ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.


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    PDF MIP0221SU, MIP0222SU MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02 MIP0222 MIP0222SU matsua CHARGER mip0221

    MIP165

    Abstract: MIP164 MIP163 IPD Industrial Products MIP9E01 MIP2
    Text: Intelligent Power Devices IPDs MIP160, MIP162, MIP163, MIP164, MIP165, MIP166 Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V)


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    PDF MIP160, MIP162, MIP163, MIP164, MIP165, MIP166 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP165 MIP164 MIP163 IPD Industrial Products MIP9E01 MIP2

    MIP9E01

    Abstract: MIP9E02 MIP709 ipd mip2 ipd mip4
    Text: Intelligent Power Devices IPDs MIP704 Silicon MOS IC • Features ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply


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    PDF MIP704 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02 MIP709 ipd mip2 ipd mip4

    MIP9E01

    Abstract: MIP9E02 MIP9E ipd mip2 ipd mip4
    Text: Intelligent Power Devices IPDs MIP504 Silicon MOS IC • Features unit: mm ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply


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    PDF MIP504 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02 MIP9E ipd mip2 ipd mip4

    MIP9E

    Abstract: MIP2
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP504 Silicon MOS IC • Features unit: mm ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated


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    PDF 2002/95/EC) MIP504 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E MIP2

    MIP9E

    Abstract: MIP16 IPD Converter MIP2 MIP512 MIP9 mip4
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP512 (Tentative) Silicon MOSFET type Integrated Circuit • Features Unit: mm 6.9±0.1 4.0 0.7 0.65 max. ■ Absolute Maximum Ratings TC = 25°C ± 3°C Parameter


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    PDF 2002/95/EC) MIP512 MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP18£ MIP01£ MIP02£ MIP9E MIP16 IPD Converter MIP2 MIP512 MIP9 mip4

    12v car battery charger wiring diagram

    Abstract: MIP9E MIP55 MIP115 MIP2 MIP814 MIP16 HSOP024-P-0450
    Text: MIP115 Intelligent Power Devices IPDs MIP115 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) Single chip IC of protection circuit


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    PDF MIP115 MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP18£ MIP01£ MIP02£ 12v car battery charger wiring diagram MIP9E MIP55 MIP115 MIP2 MIP814 MIP16 HSOP024-P-0450

    MIP9E01

    Abstract: MIP9E02
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP704 Silicon MOS IC • Features ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated


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    PDF 2002/95/EC) MIP704 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02

    MIP9E01

    Abstract: MIP9E02 MIP161 ipd mip4
    Text: Intelligent Power Devices IPDs MIP161 Silicon MOS IC • Features unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 1.0±0.1 0.1±0.05 0.93±0.1 0.8max 2.5±0.1 ■ Applications ● Switching power supply (to 5W) ● AC adaptor ● Battery charger 0.5±0.1 1.8±0.1 7.3±0.1


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    PDF MIP161 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02 MIP161 ipd mip4

    MIP161

    Abstract: MIP16 mip161 application MIP18 mip3
    Text: Intelligent Power Devices IPDs MIP161 Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V) ● An over voltage protection circuit for the secondary side, a pulseby-pulse overcurrent protection circuit and a timer auto-restart circuit are integrated.


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    PDF MIP161 MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP18£ MIP01£ MIP02£ MIP10£ MIP161 MIP16 mip161 application MIP18 mip3

    MIP0102SY

    Abstract: MIP0101SY MIP*0104SY MIP0104SY MIP9E MIP0101 MIP0100SY IPD Converter MIP2 MIP814
    Text: Intelligent Power Devices IPDs MIP0100SY, MIP0101SY, MIP0102SY, MIP0103SY, MIP0104SY Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● An over voltage protection circuit for the secondary side, a pulseby-pulse overcurrent protection circuit and a timer auto-restart circuit are integrated.


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    PDF MIP0100SY, MIP0101SY, MIP0102SY, MIP0103SY, MIP0104SY MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP0102SY MIP0101SY MIP*0104SY MIP0104SY MIP9E MIP0101 MIP0100SY IPD Converter MIP2 MIP814

    MIP0210SY

    Abstract: mip0210 MIP16
    Text: Intelligent Power Devices IPDs MIP0210SY Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V)


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    PDF MIP0210SY MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP18£ MIP01£ MIP02£ MIP10£ MIP0210SY mip0210 MIP16

    MIP9E01

    Abstract: MIP9E02 MIP805 MIP709
    Text: Intelligent Power Devices IPDs MIP705 Silicon MOS IC Unit: mm • Applications • For automotive electric equipment (relay or solenoid driver) 0.5±0.1 0.8 max. 1.8±0.1 2.5±0.1 7.3±0.1 • 3-pin intelligent power device • Five protective functions (over-current, over-voltage, load-shorting, over heat, ESD) built-in


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    PDF MIP705 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02 MIP709

    MIP2

    Abstract: MIP16 MIP805
    Text: Intelligent Power Devices IPDs MIP805 Silicon MOS IC • Features unit: mm 0.25±0.1 Part A M Di ain sc te on na tin nc ue e/ d 12° ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g


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    PDF MIP805 MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP18£ MIP01£ MIP02£ MIP10£ MIP2 MIP16 MIP805

    block diagram esd protection

    Abstract: MIP9E MIP02 MIP2 MIP3 mip506 MIP814 MIP16 MIP2 panasonic MIP9
    Text: Intelligent Power Devices IPDs MIP506 Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated


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    PDF MIP506 MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP18£ MIP01£ MIP02£ MIP10£ block diagram esd protection MIP9E MIP02 MIP2 MIP3 mip506 MIP814 MIP16 MIP2 panasonic MIP9

    mip0210

    Abstract: MIP0210SP MIP16 japanese fet regulator ic st mip4
    Text: Intelligent Power Devices IPDs MIP0210SP Silicon MOS IC • Features M Di ain sc te on na tin nc ue e/ d ● Switching power supply (to 7W) ● AC adaptor ● Battery charger 8 2 7 3 6 4 5 6.3±0.2 7.62±0.25 Symbol Drain voltage VD Control voltage VC Output current


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    PDF MIP0210SP MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP18£ MIP01£ MIP02£ MIP10£ mip0210 MIP0210SP MIP16 japanese fet regulator ic st mip4

    MIP0222

    Abstract: mip0223 MIP0221SP MIP0222SP mip0221 MIP0223SP MIP9E 0224S MIP0223S mip0224
    Text: Intelligent Power Devices IPDs MIP0221SP, MIP0222SP, MIP0223SP, MIP0224SP Silicon MOS IC • Features ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V) ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.


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    PDF MIP0221SP, MIP0222SP, MIP0223SP, MIP0224SP MIP0221SP MIP0222SP MIP13£ MIP14£ MIP15£ MIP16£ MIP0222 mip0223 MIP0221SP mip0221 MIP0223SP MIP9E 0224S MIP0223S mip0224

    mip0210

    Abstract: MIP0210SY MIP9E MIP2 mip021
    Text: Intelligent Power Devices IPDs MIP0210SY Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V) ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.


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    PDF MIP0210SY MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 mip0210 MIP0210SY MIP9E MIP2 mip021

    mip0210

    Abstract: MIP9E01 mip2 japan MIP2 MIP0210SP
    Text: Intelligent Power Devices IPDs MIP0210SP Silicon MOS IC • Features unit: mm ■ Applications 7 3 6 4 5 ● Switching power supply (to 7W) ● AC adaptor ● Battery charger 6.3±0.2 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo


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    PDF MIP0210SP MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 mip0210 MIP9E01 mip2 japan MIP2 MIP0210SP

    MIP9E01

    Abstract: MIP9E02
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP705 Silicon MOS IC Unit: mm • Applications • For automotive electric equipment (relay or solenoid driver) 0.5±0.1 0.8 max. 1.8±0.1 2.5±0.1 7.3±0.1 • 3-pin intelligent power device


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    PDF 2002/95/EC) MIP705 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02

    MIP9E01

    Abstract: MIP9E02 MIP816 ipd mip2 ipd mip4
    Text: MIP153 Intelligent Power Devices IPDs MIP153 Silicon MOS IC • Features 10.5±0.5 ● 9.5±0.2 Unit : mm 4.5±0.2 2.8±0.2 1.5 Worldwide input (85 to 274VAC) possible ● Over-voltage protection at secondary section, pulse by pulse over- 6.7±0.3 ● 15.4±0.3


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    PDF MIP153 274VAC) MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02 MIP816 ipd mip2 ipd mip4

    MIP16

    Abstract: MIP515 MIP9E MIP02 mip3
    Text: Intelligent Power Devices IPDs MIP515 Silicon MOSFET type Integrated Circuit Unit: mm 5.0±0.2 • Features 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 8.0±0.2 • Built-in five protection functions (over-current, over-voltage, loadshort-circuit, over heat, ESD)


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    PDF MIP515 MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP18£ MIP01£ MIP02£ MIP10£ MIP16 MIP515 MIP9E MIP02 mip3

    MIP153

    Abstract: MIP9E MIP16
    Text: MIP153 Intelligent Power Devices IPDs MIP153 Silicon MOS IC • Features 10.5±0.5 ● 9.5±0.2 2.8±0.2 1.5 1.4±0.1 8.0±0.2 15.4±0.3 Over-voltage protection at secondary section, pulse by pulse over- ● AC adapter ● Battery charger 1.4±0.1 0.8±0.1


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    PDF MIP153 274VAC) MIP13£ MIP14£ MIP15£ MIP16£ MIP17£ MIP18£ MIP01£ MIP153 MIP9E MIP16