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    Multi-Tech Systems Inc MT5692SMI-P-34

    V.34 PARALLEL DATA
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    DigiKey MT5692SMI-P-34 Tray
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    Micro Commercial Components MIP35R12E1ATN-BP

    IGBT MODULES
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    DigiKey MIP35R12E1ATN-BP Reel 8
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    Micro Commercial Components MIP35R12P3STN-BP

    IGBT DISCRETE
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    DigiKey MIP35R12P3STN-BP Bulk 16
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    Multi-Tech Systems Inc MT5692SMI-P-34.R1

    V.92 PARALLEL DATA ONLY
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    Multi-Tech Systems Inc MT5600SMI-P-34.R2

    MODEM V.34 PARALLEL DATA/FAX 5V
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    DigiKey MT5600SMI-P-34.R2 Tray
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    MIP3 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MIP301 Panasonic Silicon MOS IC Original PDF
    MIP301 Panasonic Intelligent Power Devices Original PDF
    MIP 320 Absopulse Electronics DC-DC Converter, (12 to 48) V to (-12 / 5|12) V Original PDF
    MIP3E3SMY Panasonic MOS / MIP3E3SMY Original PDF

    MIP3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mip3e3smy

    Abstract: mip3e3 MIP3E3SMY equivalent mip3E MIP3E3S SLB00054AJD MIP02 MIP9 mip2 mip2e
    Text: インテリジェントパワーデバイス IPD MIP3E3SMY シリコンMOS形集積回路 • 特 長 Unit : mm 4.5±0.2 10.5±0.5 9.5±0.2 8.0±0.2 15.4±0.3 ■ 用 途 φ 3.7±0.2 • スイッチング電源制御用 ■ 絶対最大定格 項目


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    PDF O-220-A1 MIP805 MIP13* MIP14* MIP15* MIP16* MIP17* MIP18* MIP01* MIP02* mip3e3smy mip3e3 MIP3E3SMY equivalent mip3E MIP3E3S SLB00054AJD MIP02 MIP9 mip2 mip2e

    MIP301

    Abstract: Intelligent Power Devices 18 PIN IC for power supply
    Text: Intelligent Power Devices IPDs MIP301 Silicon MOS IC • Features ■ Applications 8 2 7 3 6 4 5 0.3 4.2±0.3 ■ Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter Symbol 0.2±0.1 0.65 1.5±0.2 0.1±0.1 1.27 ● IPD for DC/DC converter 1 6.5±0.3 Ratings


    Original
    PDF MIP301 24VDC MIP301 Intelligent Power Devices 18 PIN IC for power supply

    IC 5003

    Abstract: q100v 24VDC power supply circuit diagram 4203S "Intelligent Power Devices" MIP301 tr fet 1A 8 pin 5v power supply ic ZC10 ic pin diagram
    Text: Intelligent Power Devices IPDs MIP301 Silicon MOS IC • Features ■ Applications 8 2 7 3 6 4 5 0.3 4.2±0.3 ■ Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter Symbol 0.2±0.1 0.65 1.5±0.2 0.1±0.1 1.27 ● IPD for DC/DC converter 1 6.5±0.3 Ratings


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    PDF MIP301 24VDC IC 5003 q100v 24VDC power supply circuit diagram 4203S "Intelligent Power Devices" MIP301 tr fet 1A 8 pin 5v power supply ic ZC10 ic pin diagram

    MIP353

    Abstract: MIP3530MS diagram rice cooker diagram rice cooker panasonic "IH rice cooker" dehumidifier mip35 MIP803 MIP55 MIP9
    Text: MIP3530MS Silicon MOS FET type integrated circuit • Features  Package  Expanding the range of input / output  High-efficiency and the reduction of coil sound  Lower the average noise  Protecting function overload protection, over voltage protection, overheat


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    PDF MIP3530MS MIP353 MIP803/804 MIP816/826 MIP51£ MIP55£ MIP50£ MIP353 MIP3530MS diagram rice cooker diagram rice cooker panasonic "IH rice cooker" dehumidifier mip35 MIP803 MIP55 MIP9

    mip355

    Abstract: MIP3550MS MIP9E diagram rice cooker panasonic electrical diagram rice cooker MIP51 MIP35 MIP55 diagram rice cooker dotp
    Text: MIP3550MS Silicon MOS FET type integrated circuit • Features  Package  Expanding the range of input / output  High-efficiency and the reduction of coil sound  Lower the average noise  Protecting function overload protection, over voltage protection, overheat


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    PDF MIP3550MS MIP355 MIP803/804 MIP816/826 MIP51£ MIP55£ MIP50£ mip355 MIP3550MS MIP9E diagram rice cooker panasonic electrical diagram rice cooker MIP51 MIP35 MIP55 diagram rice cooker dotp

    mip355

    Abstract: MIP3550MS diagram rice cooker panasonic
    Text: MIP3550MS Silicon MOS FET type integrated circuit • Features  Package  Expanding the range of input / output  High-efficiency and the reduction of coil sound  Lower the average noise  Protecting function overload protection, over voltage protection, overheat


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    PDF MIP3550MS MIP355 VFBP01* MIP00* MIP55* MIP816/826 MIP50* MIP02* MIP52* MIP56* mip355 MIP3550MS diagram rice cooker panasonic

    ABB pressure

    Abstract: MIP35 glycerine ABB pressure gauge bourdon gauge Diaphragm Pressure Gauge bourdon MIP35-4112-9XX DIN405
    Text: MIP35 Hygienic pressure gauge Features ! Overload resistant ! Media temperature 150°C ! Accuracy class 1.0 – 100% Application The MIP35 meter is well suited for accurate measurement of pressure in demanding operating conditions, such as pressure surges and high media temperature.


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    PDF MIP35 MIP35 ABB pressure glycerine ABB pressure gauge bourdon gauge Diaphragm Pressure Gauge bourdon MIP35-4112-9XX DIN405

    MIP353

    Abstract: MIP3530MS mip2
    Text: MIP3530MS Silicon MOS FET type integrated circuit • Features  Package  Expanding the range of input / output  High-efficiency and the reduction of coil sound  Lower the average noise  Protecting function overload protection, over voltage protection, overheat


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    PDF MIP3530MS MIP353 VFBP01* MIP00* MIP55* MIP816/826 MIP50* MIP02* MIP52* MIP56* MIP353 MIP3530MS mip2

    MIP004

    Abstract: No abstract text available
    Text: MIP0040MS Type Silicon MOSFET type Integrated Circuit Application For Switching Power Supply Control Structure CMOS type Equivalent Circuit Figure 8 Out Line DIP7-A1 Marking MIP004 A. ABSOLUTE MAXIMUM RATINGS Ta= 25°C±3°C No. 1 Item Ratings Unit VIN –0.3 to 500


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    PDF MIP0040MS MIP004 MIP01* MIP02* MIP00* MIP55* MIP816/826 MIP52* MIP56* MIP53* MIP004

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    LQM2MPN

    Abstract: LQH3NPN LTC3526L NR3015 ZC2811E LTC3526LB-2 MURATA LQM2MPN LTC3526LEDC NR3010T
    Text: LTC3526L-2/LTC3526LB-2 550mA 2MHz Synchronous Step-Up DC/DC Converters in 2mm x 2mm DFN Features Description Delivers 3.3V at 100mA from a Single Alkaline/ NiMH Cell or 3.3V at 200mA from Two Cells n V Start-Up Voltage: 680mV IN n 1.5V to 5.25V V OUT Range


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    PDF LTC3526L-2/LTC3526LB-2 550mA 100mA 200mA 680mV LTC3526L-2) LTC3526LB-2) 3526L-2/LTC3526LB-2 LTC3400/LTC3400B 600mA LQM2MPN LQH3NPN LTC3526L NR3015 ZC2811E LTC3526LB-2 MURATA LQM2MPN LTC3526LEDC NR3010T

    Untitled

    Abstract: No abstract text available
    Text: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 Single chip IC of protection function circuit


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    PDF MIP106 MIP13Â MIP14Â MIP15Â MIP16Â MIP17Â MIP18Â MIP01Â MIP02Â

    mip2f2

    Abstract: power supply LED 3w mip2f2 MIP2F2 IC mip2f mip2fx IC301 MIP2C2 MIP2C2 MIP2F2 power supply mip2f2 MIP022X
    Text: IPD Product Selection Guide October 1, 2008 Semiconductor Company, Panasonic Corporation Precautions on the Sales of IPDs 1 The sale and/or the export of IPD products to any customer or customers located in any country other than Japan is expressly prohibited by the Agreement made and executed by and between Power Integrations, Inc. and Panasonic Corporation.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Dual 750 mA LED Flash Driver with I2C-Compatible Interface ADP1660 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM INPUT VOLTAGE = 2.7V TO 5.0V 10µF 1.0µH VIN TORCH/ TxMASK GPIO SW VOUT 10µF ADP1660 LED1 STROBE UP TO 750mA SCL LED2 SGND UP TO 750mA PGND 11018-001


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    PDF 12-ball ADP1660ACBZ-R7 ADP1660CB-EVALZ CB-12-7 9-07-2012-A ADP1660 ADP1660 D11018-0-10/12

    Untitled

    Abstract: No abstract text available
    Text: LTC3526-2/LTC3526B-2 500mA 2MHz Synchronous Step-Up DC/DC Converters in 2mm x 2mm DFN NOT RECOMMENDED FOR NEW DESIGNS Contact Linear Technology for Potential Replacement FEATURES DESCRIPTION Delivers 3.3V at 100mA from a Single Alkaline/ NiMH Cell or 3.3V at 200mA from Two Cells


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    PDF LTC3526-2/LTC3526B-2 500mA 100mA 200mA 850mV LTC3526-2) LTC3526B-2) LTC3400/LTC3400B 600mA LTC3527/LTC3527-1

    how to stepup 0.5v to 5v

    Abstract: No abstract text available
    Text: LTC3525L-3 400mA Micropower Synchronous Step-Up DC/DC Converter with Output Disconnect FEATURES n n n n n n n n n n n n n DESCRIPTION Start-Up at 0.7V Typical, 0.88V Guaranteed Up to 95% Efficiency Output Disconnect and Inrush Current Limit 3V Fixed Output Voltage


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    PDF LTC3525L-3 400mA 160mA 3525L-3 LTC3525 400mA, LTC3526/LTC3526B 500mA 3525lfa how to stepup 0.5v to 5v

    MIP414

    Abstract: MIP414MD
    Text: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


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    PDF MIP4140MD O-220IPD7-A2 MIP414MD MMIP811/812 MMIP814/815/816 MIP82£ MIP55£ MIP414 MIP414MD

    MIP9E01

    Abstract: MIP9E02 MIP709 ipd mip2 ipd mip4
    Text: Intelligent Power Devices IPDs MIP704 Silicon MOS IC • Features ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply


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    PDF MIP704 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02 MIP709 ipd mip2 ipd mip4

    MIP9E01

    Abstract: mip10 Matsua & SAW & IF matsua saw MIP108 4.5V TO 100V INPUT REGULATOR
    Text: MIP108 Intelligent Power Devices IPDs MIP108 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 1.27 Single chip IC of protection circuit


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    PDF MIP108 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 mip10 Matsua & SAW & IF matsua saw MIP108 4.5V TO 100V INPUT REGULATOR

    MIP417MD

    Abstract: TO-220IPD7-A2 mip41 MIP16
    Text: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.


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    PDF MIP4170MD O-220IPD7-A2 MIP417MD MIP811/812 MIP814/815/816 MIP82£ MIP55£ MIP417MD TO-220IPD7-A2 mip41 MIP16

    Matsua de

    Abstract: MIP9E01 4.5V TO 100V INPUT REGULATOR
    Text: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 ● Single chip IC of protection function circuit


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    PDF MIP106 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 Matsua de MIP9E01 4.5V TO 100V INPUT REGULATOR

    MIP9E01

    Abstract: MIP9E02 MIP805 MIP709
    Text: Intelligent Power Devices IPDs MIP705 Silicon MOS IC Unit: mm • Applications • For automotive electric equipment (relay or solenoid driver) 0.5±0.1 0.8 max. 1.8±0.1 2.5±0.1 7.3±0.1 • 3-pin intelligent power device • Five protective functions (over-current, over-voltage, load-shorting, over heat, ESD) built-in


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    PDF MIP705 MIP10£ MIP811/812 MIP11£ MIP814/815/816 MIP803/804/806 MIP82£ MIP805 MIP9E01 MIP9E02 MIP709

    MIP9E01

    Abstract: MIP0122SY MIP9E02 TO-220-A1 MIP0123SY MIP0125SY MIP816 MIP0123 matsua CHARGER ipd mip2
    Text: Intelligent Power Devices IPDs MIP0122SY, MIP0123SY, MIP0124SY, MIP0125SY Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.


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    PDF MIP0122SY, MIP0123SY, MIP0124SY, MIP0125SY MIP0122SY MIP0123SY MIP0124SY MIP0125SY MIP10£ MIP811/812 MIP9E01 MIP9E02 TO-220-A1 MIP816 MIP0123 matsua CHARGER ipd mip2

    MIP301

    Abstract: No abstract text available
    Text: Panasonic Intelligent Power Devices IPDs MIP301 S ilicon M O S IC • Features 9 100V high breakdown voltage MOS FET and CMOS control cir­ cuits are integrated into one chip 9 5V and 3 - 5W output with 24VDC input (Flyback method) 2rn~ ■ Applications


    OCR Scan
    PDF MIP301 24VDC MIP301