B1000
Abstract: Mimix xb1000
Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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Original
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10-May-03
B1000
MIL-STD-883
Mimix xb1000
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B1000
Abstract: Mimix xb1000 XU1000 pHEMT transistor MTBF
Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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Original
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B1000
01-May-02
MIL-STD-883
B1000
Mimix xb1000
XU1000
pHEMT transistor MTBF
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PDF
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R1000 resistor
Abstract: XR1000 R1000 XH1000 receiver mmic sl353 pHEMT transistor MTBF
Text: 17.0-27.0 GHz GaAs MMIC Receiver R1000 May 2002 - Rev 01-May-02 Chip Device Layout Features Fundamental Integrated Receiver 10.0 dB Conversion Gain 3.5 dB Noise Figure 15.0 dB Image Rejection 60.0 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883
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Original
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R1000
01-May-02
MIL-STD-883
R1000 resistor
XR1000
R1000
XH1000
receiver mmic
sl353
pHEMT transistor MTBF
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PDF
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diode p1000
Abstract: P1000 diode OC 140 germanium transistor sl353 P1000 84-1LMI XP1000 XU1000 pHEMT transistor MTBF gold detector circuit diagram
Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent for Modulations up to 64 QAM High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector
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Original
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P1000
01-May-02
MIL-STD-883
diode p1000
P1000 diode
OC 140 germanium transistor
sl353
P1000
84-1LMI
XP1000
XU1000
pHEMT transistor MTBF
gold detector circuit diagram
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PDF
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