Option Information
Abstract: No abstract text available
Text: Work-In-Progress Option Information www.vishay.com Vishay Siliconix MIL-PRF-38535 Class Level B Process Flow MIL-STD-883/M5004 INTERNAL VISUAL METHOD 2010 CONDITION B TEMP CYCLE METHOD 1010 CONDITION C CONSTANT ACCELERATION METHOD 2001 CONDITION E PRE-BURNIN ELECTRICAL
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MIL-PRF-38535
MIL-STD-883/M5004)
HETD-883/M5004)
28-Apr-15
Option Information
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no-go
Abstract: No abstract text available
Text: HVCMOS IC Process Option Flows RB PRODUCT FLOW 1 (SIMILAR TO MIL-STD-883 CLASS B) RC PRODUCT FLOW COMMERICAL PRODUCT FLOW Preseal Visual Method 2010, Condition B Preseal Visual Method 2010, Condition B Temperature Cycle (2) Method 1010, Condition C, 10 Cycles, -65°C to + 150°C
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MIL-STD-883
MIL-STD-883.
MIL-STD-883
no-go
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method d 1071
Abstract: LTPD
Text: DMOS Process Option Flow Chart DMOS ARRAY RB FLOW 1 (SIMILAR TO MIL-STD-883 CLASS B) Preseal Visual Method 2010, Condition B Temperature Cycle Method 1010, Condition C, 10 Cycles, -65°C to +150°C 10 minutes minimum @ each temperature extreme Constant Acceleration
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MIL-STD-883
MIL-STD-750
MIL-STD-750
method d 1071
LTPD
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MSK PRODUCT COMPARISON CHART
Abstract: No abstract text available
Text: MSK PRODUCT COMPARISON CHART Test Flow or Requirement MIL-STD-883 Test Method Certification Qualification QML Listing No Element Evaluation Clean Room Processing Ultrasonic Inspection, TM 2030 Wirebond Process Control No Yes A/R Yes Hermetic Class H Yes
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MIL-STD-883
MSK PRODUCT COMPARISON CHART
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M1000
Abstract: M1000/SUPER5-KIT/SCC
Text: 32.0-46.0 GHz GaAs MMIC Balanced Mixer April 2005 - Rev 30-Apr-05 M1000 Features Chip Device Layout Fundamental Balanced Mixer 7.0 dB Conversion Loss +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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30-Apr-05
M1000
MIL-STD-883
M1000
M1000/SUPER5-KIT/SCC
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TEXAS 7697
Abstract: CMM1100 CMM1100-BD DM6030HK PB-CMM1100-BD-0000 TS3332LD
Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD February 2010 - Rev-05-Feb-10 Features Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
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CMM1100-BD
Rev-05-Feb-10
Mil-Std-883
CMM1100-BD-000W
PB-CMM1100-BD-0000
CMM1100-BD
TEXAS 7697
CMM1100
DM6030HK
PB-CMM1100-BD-0000
TS3332LD
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M1000
Abstract: 40BRFM0058 mmic MIXER 210 84-1LMI XM1000
Text: 32.0-46.0 GHz GaAs MMIC Balanced Mixer November 2005 - Rev 21-Nov-05 M1000 Features Chip Device Layout Fundamental Balanced Mixer 7.0 dB Conversion Loss +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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21-Nov-05
M1000
MIL-STD-883
M1000
40BRFM0058
mmic MIXER 210
84-1LMI
XM1000
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CMM1100
Abstract: CMM1100-BD PB-CMM1100-BD TS3332LD
Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100 May 2006 - Rev 01-May-06 Features Self Bias Architecture 18.0 dB Small Signal Gain 3.5 dB Noise Figure +11.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout
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CMM1100
01-May-06
MIL-STD-883
CMM1100-BD
PB-CMM1100-BD
CMM1100-BD
CMM1100
PB-CMM1100-BD
TS3332LD
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Untitled
Abstract: No abstract text available
Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD September 2009 - Rev 22-Sep-09 Features Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
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CMM1100-BD
22-Sep-09
Mil-Std-883
metalD-000V
PB-CMM1100-BD-0000
CMM1100-BD
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CELSIUS M420
Abstract: 10358 microstrip CMM1110 CMM1110-BD M420 PB-CMM1110-BD TS3332LD MA1916
Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1110 May 2006 - Rev 01-May-06 Features Self Bias Architecture 16.0 dB Small Signal Gain 2.5 dB Noise Figure +13.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout
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CMM1110
01-May-06
MIL-STD-883
CMM1110-BD
PB-CMM1110-BD
CMM1110-BD
CELSIUS M420
10358 microstrip
CMM1110
M420
PB-CMM1110-BD
TS3332LD
MA1916
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M1000
Abstract: No abstract text available
Text: 32.0-46.0 GHz GaAs MMIC Balanced Mixer November 2005 - Rev 21-Nov-05 M1000 Features Chip Device Layout Fundamental Balanced Mixer 7.0 dB Conversion Loss +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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21-Nov-05
M1000
MIL-STD-883
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M1000
Abstract: No abstract text available
Text: 32.0-46.0 GHz GaAs MMIC Balanced Mixer August 2005 - Rev 04-Aug-05 M1000 Features Chip Device Layout Fundamental Balanced Mixer 7.0 dB Conversion Loss +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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04-Aug-05
M1000
MIL-STD-883
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PB-CMM1100-BD-0000
Abstract: tanaka epoxy tanaka TS3332LD epoxy transistor BD 140 CMM1100-BD CMM1100-BD-000V DM6030HK TS3332LD
Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD September 2008 - Rev 28-Sep-08 Features Self Bias Architecture 16.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
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CMM1100-BD
28-Sep-08
Mil-Std-883
metallizaD-000V
PB-CMM1100-BD-0000
CMM1100-BD
PB-CMM1100-BD-0000
tanaka epoxy
tanaka TS3332LD epoxy
transistor BD 140
CMM1100-BD-000V
DM6030HK
TS3332LD
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3011-75
Abstract: B103B B110 JESD22 LMZ14203EXT lmz12003ext switching regulator 12v 3A
Text: LMZ12003EXT 3A SIMPLE SWITCHER Power Module with 20V Maximum Input Voltage for Military and Rugged Applications Easy to use 7 pin package Performance Benefits • Low radiated emissions / High radiated immunity ■ Passes vibration standard MIL-STD-883 Method 2007.2 Condition A
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LMZ12003EXT
MIL-STD-883
JESD22
B103B
3011-75
B110
LMZ14203EXT
lmz12003ext
switching regulator 12v 3A
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B103B
Abstract: B110 JESD22
Text: LMZ14202EXT 2A SIMPLE SWITCHER Power Module with 42V Maximum Input Voltage for Military and Rugged Applications Easy to use 7 pin package Performance Benefits • Low radiated emissions / High radiated immunity ■ Passes vibration standard MIL-STD-883 Method 2007.2 Condition A
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LMZ14202EXT
MIL-STD-883
JESD22
B103B
B110
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30117
Abstract: B103B B110 JESD22 JESD22-B110 lmz12001ext
Text: LMZ12001EXT 1A SIMPLE SWITCHER Power Module with 20V Maximum Input Voltage for Military and Rugged Applications Easy to use 7 pin package Performance Benefits • Low radiated emissions / High radiated immunity ■ Passes vibration standard MIL-STD-883 Method 2007.2 Condition A
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LMZ12001EXT
MIL-STD-883
JESD22
B103B
30117
B110
JESD22-B110
lmz12001ext
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Untitled
Abstract: No abstract text available
Text: SN74LVC14A-Q1 HEX SCHMITT-TRIGGER INVERTER www.ti.com SCAS705B – SEPTEMBER 2003 – REVISED FEBRUARY 2008 FEATURES 1 • • • • • • • • Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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SN74LVC14A-Q1
SCAS705B
MIL-STD-883,
SN74LVC14p
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Untitled
Abstract: No abstract text available
Text: LMZ14203EXT 3A SIMPLE SWITCHER Power Module with 42V Maximum Input Voltage for Military and Rugged Applications Easy to use 7 pin package Performance Benefits • Low radiated emissions / High radiated immunity ■ Passes vibration standard MIL-STD-883 Method 2007.2 Condition A
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LMZ14203EXT
MIL-STD-883
JESD22
B103B
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XM1003-BD
Abstract: No abstract text available
Text: 32.0-42.0 GHz GaAs MMIC Image Reject Mixer M1003-BD February 2007 - Rev 16-Feb-07 Features Sub-harmonic Image Reject Mixer GaAs HBT Technology 9.0 dB Conversion Loss 18.0 dB Image Rejection 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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M1003-BD
16-Feb-07
MIL-STD-883
XM1003-BD
XM1003-BD-000V
XM1003-BD-EV1
XM1003-BD
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CMM1100
Abstract: CMM1100-BD CMM1100-BD-000X DM6030HK PB-CMM1100-BD TS3332LD
Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD February 2007 - Rev 06-Feb-07 Features Self Bias Architecture 18.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout
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CMM1100-BD
06-Feb-07
MIL-STD-883
CMM1100-BD-000X
CMM1100-BD
PB-CMM1100-BD
CMM1100
CMM1100-BD-000X
DM6030HK
PB-CMM1100-BD
TS3332LD
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CMM1110
Abstract: CMM1110-BD CMM1110-BD-000X DM6030HK M420 PB-CMM1110-BD TS3332LD
Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1110-BD January 2007 - Rev 29-Jan-07 Features Self Bias Architecture 16.0 dB Small Signal Gain 2.5 dB Noise Figure +13.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout
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CMM1110-BD
29-Jan-07
MIL-STD-883
CMM1110-BD-000X
CMM1110-BD
PB-CMM1110-BD
CMM1110
CMM1110-BD-000X
DM6030HK
M420
PB-CMM1110-BD
TS3332LD
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DM6030HK
Abstract: TS3332LD XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1
Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD August 2007 - Rev 11-Aug-07 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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P1016-BD
11-Aug-07
MIL-STD-883
XP1016-BD
XP1016-BD-000V
XP1016-BD-EV1
XP1016
DM6030HK
TS3332LD
XP1016-BD
XP1016-BD-000V
XP1016-BD-EV1
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BD 140 transistor
Abstract: tanaka epoxy tanaka TS3332LD tanaka TS3332LD epoxy CMM1110-BD CMM1110-BD-000V DM6030HK M420 TS3332LD
Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1110-BD May 2007 - Rev 01-May-07 Features Self Bias Architecture 15.0 dB Small Signal Gain 3.2 dB Noise Figure +13.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout
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CMM1110-BD
01-May-07
MIL-STD-883
CMM1110-BD-000V
PB-CMM1110-BD-0000
CMM1110-BD
BD 140 transistor
tanaka epoxy
tanaka TS3332LD
tanaka TS3332LD epoxy
CMM1110-BD-000V
DM6030HK
M420
TS3332LD
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ts333
Abstract: P1016 tanaka epoxy tanaka TS3332LD DM6030HK TS3332LD XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1
Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD August 2007 - Rev 11-Aug-07 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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P1016-BD
11-Aug-07
MIL-STD-883
XP1016-BD
XP1016-BD-000V
XP1016-BD-EV1
XP1016
ts333
P1016
tanaka epoxy
tanaka TS3332LD
DM6030HK
TS3332LD
XP1016-BD
XP1016-BD-000V
XP1016-BD-EV1
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