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    MIL 880 TRANSISTOR Search Results

    MIL 880 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MIL 880 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


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    MRF9180 MRF9180S PDF

    MRF9180R6

    Abstract: rf push pull mosfet power amplifier 865 marking amplifier c11b3
    Text: Freescale Semiconductor Technical Data Rev. 9, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


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    Hig9180R6 MRF9180R6 rf push pull mosfet power amplifier 865 marking amplifier c11b3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original
    MRF9180 MRF9180S PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF9180 MRF9180S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 – 895 MHz band. The high gain and broadband performance


    Original
    MRF9180 MRF9180S PDF

    MRF9180

    Abstract: MRF9180S
    Text: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA MRF9180 MRF9180S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 – 895 MHz band. The high gain and broadband performance


    Original
    MRF9180/D MRF9180 MRF9180S MRF9180 MRF9180S PDF

    MRF9180R6

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF9180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with


    Original
    MRF9180/D MRF9180R6 MRF9180/D PDF

    MRF9180

    Abstract: MRF9180R6
    Text: Freescale Semiconductor Technical Data Document Number: MRF9180 Rev. 10, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


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    MRF9180 MRF9180R6 MRF9180 MRF9180R6 PDF

    MRF9135LSR3

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9135L MRF9135LR3 MRF9135LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


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    MRF9135L MRF9135LR3 MRF9135LSR3 PDF

    C21B1

    Abstract: MRF9180 MRF9180R6
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF9180R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with


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    MRF9180/D MRF9180R6 C21B1 MRF9180 MRF9180R6 PDF

    MRF9180R6

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9180 Rev. 9, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original
    MRF9180 IS-97 MRF9180R6 PDF

    MRF9180

    Abstract: MRF9180R6
    Text: Document Number: MRF9180 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original
    MRF9180 MRF9180R6 IS-95 MRF9180 MRF9180R6 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 – 895 MHz band. The high gain and broadband performance


    Original
    MRF9180/D MRF9180 MRF9180S PDF

    MRF9180R6

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9180 Rev. 9, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original
    MRF9180 MRF9180R6 MRF9180R6 PDF

    100B270JP500X

    Abstract: NIPPON CAPACITORS MRF9210 DS0978 TRANSISTOR J408 865 marking amplifier
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


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    MRF9210R3 100B270JP500X NIPPON CAPACITORS MRF9210 DS0978 TRANSISTOR J408 865 marking amplifier PDF

    MRF9180

    Abstract: GGG 92 MRF9180S
    Text: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original
    MRF9180/D MRF9180 MRF9180S MRF9180 GGG 92 MRF9180S PDF

    MRF9180

    Abstract: MRF9180S
    Text: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original
    MRF9180/D MRF9180 MRF9180S MRF9180 MRF9180S PDF

    rf push pull mosfet power amplifier

    Abstract: push pull power amplifier
    Text: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original
    MRF9180/D MRF9180 MRF9180S MRF9180/D rf push pull mosfet power amplifier push pull power amplifier PDF

    MRF9120

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these


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    MRF9120 MRF9120S PDF

    J103 transistor 3 pin

    Abstract: J103 transistor C6B3 UT-85-M17
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897 Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 – 970 MHz.


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    MRF897 J103 transistor 3 pin J103 transistor C6B3 UT-85-M17 PDF

    93F2975

    Abstract: MRF9120S MRF9120
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these


    Original
    MRF9120 MRF9120S 93F2975 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9135L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9135L MRF9135LR3 MRF9135LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original
    MRF9135L/D MRF9135L MRF9135LR3 MRF9135LSR3 PDF

    MRF9135L

    Abstract: MRF9135LSR3 MRF9135LR3
    Text: MOTOROLA Order this document by MRF9135L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9135L MRF9135LR3 MRF9135LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


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    MRF9135L/D MRF9135L MRF9135LR3 MRF9135LSR3 MRF9135L MRF9135LR3 MRF9135LSR3 PDF

    nippon capacitors

    Abstract: 2508051107Y0 3A412 MRF9210R3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with


    Original
    MRF9210/D MRF9210R3 nippon capacitors 2508051107Y0 3A412 MRF9210R3 PDF

    93F2975

    Abstract: 865 marking amplifier MRF9120LR3
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these


    Original
    MRF9120R3 MRF9120LR3 93F2975 865 marking amplifier PDF