MICROWAVES TRANSISTORS Search Results

MICROWAVES TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
RX1214B300YI	Rochester Electronics LLC	RX1214B300Y - Microwave Power Transistor (Ampleon Die)
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL

MICROWAVES TRANSISTORS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
12 km fm transmitter Abstract: microwaves 433333 10 km range fm transmitter 315 MHz square antenna an power 88-108 mhz "multipath performance" PIC BASIC bluetooth short distance rf tx ic 433 PIC12C509A Text: Design Methods for Control Class MicroRadio This tutorial covers worldwide regulatory issues, and key system, circuit, and firmware design aspects of modern short-range radio systems, particularly those for control applications. Parts 1-2 of 5 Parts Farron L. Dacus	Original		PDF
UHV 806 Abstract: metal detector plans seven wonders OC 140 germanium transistor microwaves Amplifier Research metal detector door bell chime receiver SiGe POWER TRANSISTOR frankfurt HFA3861 Text: SPECIAL REPORT SiGe Advances SiGe Technology Makes Practical Advances This novel device technology is making major strides in RF and digital integrated circuits for highfrequency, high-speed communications systems. JACK BROWNE Publisher/Editor ILICON germanium SiGe is a semiconductor technology made for	Original		PDF
D3C2040 Abstract: D3C2060 DMI6018 D3I0120 D3C1218 D3C4080 Power Amplifier Module for GSM ADL5551 ADL5552 D3C0890 Text: MWjuly03_051.ps 7/8/03 1:20 PM Page 51 DESIGN POWER-CONTROLLED AMPS Linear Power Control Of GSM Amplifier Power p This technique of controlling PA module output power has advantages in dynamic range and accuracy compared to traditional current-sensing and voltagesensing power-control methods.	Original	MWjuly03 ADL5551 ADL5552 D3C2040 D3C2060 DMI6018 D3I0120 D3C1218 D3C4080 Power Amplifier Module for GSM D3C0890	PDF
varactor diode model in ADS Abstract: working of colpitts oscillator Colpitts VCO design application of colpitts oscillator colpitts oscillator varactor diode for Colpitts oscillator ADS varactor diode varactor diode SPICE model Colpitts parallel-mode tank circuit agilent ads VCO Text: DESIGN FEATURE Trimless VCO Develop A Trimless Voltage-Controlled Modeling and designing a trimless Oscillator VCO requires a full understanding Trimless VCOs, Part 2 of the non-ideal nature of oscillator components and architectures. Chris O’Connor Member of Technical Staff	Original	MTT-29, 770the MAX2620, 1/S11 varactor diode model in ADS working of colpitts oscillator Colpitts VCO design application of colpitts oscillator colpitts oscillator varactor diode for Colpitts oscillator ADS varactor diode varactor diode SPICE model Colpitts parallel-mode tank circuit agilent ads VCO	PDF
HP RF TRANSISTOR GUIDE Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS	Original	SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor	PDF
Untitled Abstract: No abstract text available Text: Cover Story jack browne Flat gain is hard to come by in any amplifier especially one with even moderate bandwidth. Achieving flat gain requires that the amplifier’s active devices are impedance matched as closely as possible for all of the frequencies within	Original	YSF-122+	PDF
bc237 smd Abstract: microwave sensor microwave distance sensors ne 556 timer bc237 equivalent SMD microwave RADAR motion sensors microwave motion sensors motion sensor doppler motion sensor doppler effect motion DOPPLER Text: APPLICATIONS SENSORS Gerhard Lohninger Microwave sensor SMX-1: Opening doors by invisible hands Microwave sensors have two key advantages over other motion sensors: they are independent of temperature and can make direct use of the Doppler effect. The SMX-1 microwave sensor with its	Original		PDF
ad8307 power meter Abstract: AD8302 ad8307 transmit power control phase detector AD8302 "logarithmic amplifier" decibel meter design of multi section directional coupler AND8314 AD8314 Logarithmic Amplifier detector rf power Text: MWnov072 10/31/02 4:04 PM Page 72 RF POWER MEASUREMENTS DESIGN Make Precise Base-Station Power Measurements m A highly integrated device with a pair of logarithmic amplifier detectors operating to approximately 3 GHz can be useful in making amplitude and phase measurements on two input signals.	Original	MWnov072 ad8307 power meter AD8302 ad8307 transmit power control phase detector AD8302 "logarithmic amplifier" decibel meter design of multi section directional coupler AND8314 AD8314 Logarithmic Amplifier detector rf power	PDF
ALTERNATOR REGULATOR 14v Abstract: No abstract text available Text: High-Power and Hybrid Vehicles Increase Demand For Load-Dump Protection Page 1 of 2 About AE \| For Advertisers \| Contact AE \| Subscr Search Powertrain Body Electronics Newsletter: Subscribe Now Current Newsletter Archive Resources: Blog Webinars Conferences	Original		PDF
GPPO Abstract: No abstract text available Text: OPTICAL COMMUNICATION PRODUCT LINE “Providing integrated solution for 100 & 400Gbps Equipments” Providing Integrated Solutions for RF/Optical Assemblies New advanced 64 Gbps Mux & DeMux In QFN 5X5 mm package =	Original	400Gbps AC50025 30GHz) GPPO	PDF
MRF873 Abstract: j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors Text: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE RF Power Device Impedances: Practical Considerations AN1526 Prepared by: Alan Wood and Bob Davidson Motorola Semiconductor Products Sector ABSTRACT The definition of large–signal series equivalent input and	Original	AN1526/D AN1526 AN1526/D* MRF873 j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors	PDF
s-band 50 Watt solid state power amplifier high p Abstract: AN1038 application hybrid coupler 3dB 180 TRANS7 hf combiners AN1032 AN1038 NES2427P-60 150 watt amplifier advantages and disadvantages power combiner 4 watt VHF Text: California Eastern Laboratories APPLICATION NOTE AN1038 A 70-W S-Band Amplifier For MMDS & Wireless Data/Internet Applications Shansong Song and Raymond Basset California Eastern Laboratories, Inc 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 DESIGN CHALLENGES	Original	AN1038 ato50 60-Watt s-band 50 Watt solid state power amplifier high p AN1038 application hybrid coupler 3dB 180 TRANS7 hf combiners AN1032 AN1038 NES2427P-60 150 watt amplifier advantages and disadvantages power combiner 4 watt VHF	PDF
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF873 motorola an282 application RF TRANSISTOR 2.5 GHZ s parameter Theory of Modern Electronic Semiconductor Device Motorola Power Transistor Data Book J102 fet uhf microwave fet 2 watt rf transistor Text: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances: Practical Considerations Prepared by: Alan Wood and Bob Davidson	Original	AN1526/D AN1526 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF873 motorola an282 application RF TRANSISTOR 2.5 GHZ s parameter Theory of Modern Electronic Semiconductor Device Motorola Power Transistor Data Book J102 fet uhf microwave fet 2 watt rf transistor	PDF
MRF873 Abstract: motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1526/D AN1526 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. RF Power Device Impedances:	Original	AN1526/D AN1526 MRF873 motorola SEMICONDUCTOR APPLICATION NOTE POWER AMP motorola an282 application MRF650 motorola rf Power Transistor Data Book schematic diagram 800 watt power amplifier TRANSISTOR D 1978 AN1526 Theory of Modern Electronic Semiconductor Device broad-band Microwave Class-C Transistor Amplifiers	PDF

SIT Static Induction Transistor Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are	Original	AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier	PDF
the working of IC 4047 Abstract: IC 4047 working ic 4047 IC 4047 BE data sheet of IC 4047 RF MESFET S parameters pindiode switch Text: TUTORIAL DISTORTION IN VOLTAGE-VARIABLE ATTENUATORS W ith bandwidth a precious commodity, designers are faced with the challenge of providing increasingly larger amounts of information to a growing number of users. This information can be in many forms. Internet browsing, short messaging, e-mail and fax applications, to name just	Original		PDF
MRF1507 Abstract: EB209 MRF5007 N4000 Text: MOTOROLA EB209 Order this document by EB209/D SEMICONDUCTOR ENGINEERING BULLETIN EB209 Mounting Method for RF Power Leadless Surface Mount Transistors Prepared by: Jeanne Pavio, David Dougherty, Mike McCloskey, David Runton and Alex Elliott Motorola Semiconductor Products Sector	Original	EB209 EB209/D MRF1507 EB209 MRF5007 N4000	PDF
C-Band Power GaAs FET HEMT Chips Abstract: CMC 707 7 transistor solid state x-band s-parameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC X-band amplifier HEMT MMIC POWER AMPLIFIER Three MMIC Solution for an X-band RF Front End multilayer lithography ic fabrication GaAs FET HEMT Chips Text: KU-BAND MMIC POWER AMPLIFIERS DEVELOPED USING MSAG MESFET TECHNOLOGY T his article presents the design approach and test results of 1, 1.5, 2 and 5 W, Kuband MMIC power amplifiers developed using the high performance MSAG MESFET technology. Both single-ended and	Original		PDF
cte2 Abstract: ansys MRF1507 thermal analysis on pcb EB209 MRF5007 N4000 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by EB209/D SEMICONDUCTOR ENGINEERING BULLETIN EB209 Mounting Method for RF Power Leadless Surface Mount Transistors Prepared by: Jeanne Pavio, David Dougherty, Mike McCloskey, David Runton and Alex Elliott	Original	EB209/D EB209 cte2 ansys MRF1507 thermal analysis on pcb EB209 MRF5007 N4000	PDF
MRF1507 Abstract: EB209 MRF5007 N4000 motorola rf book MRF50 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by EB209/D SEMICONDUCTOR ENGINEERING BULLETIN ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 EB209 Mounting Method for RF Power Leadless Surface Mount Transistors Prepared by: Jeanne Pavio, David Dougherty, Mike McCloskey, David Runton and Alex Elliott	Original	EB209/D EB209 MRF1507 EB209 MRF5007 N4000 motorola rf book MRF50	PDF
AC power line filtering capacitors Abstract: inductors 10 micro henry schematic diagram 48V telecom series 5 SLC skycap RF Power Feed-Through Capacitors with Band Conductor, Class 1 Ceramic SILVER MICA capacitor high voltage 1000 micro farad electrolytic capacitor avx film elco transformer MIL-C-11015 Text: 4 Cap Array: A/D: AC: Accu L: Accu F: Accu P: AccuGuard: Act ve Components: Alternating Current: Aluminum Electrolytic: Ambient Noise: Ambient Temperature: Ammo-Pack: Ampere: Analog Circuit: Anode: Automatic Insertion: Axial Leads: B Tolerance: Backpanel:	Original	Coil-1496 S-TPG5M1098-N AC power line filtering capacitors inductors 10 micro henry schematic diagram 48V telecom series 5 SLC skycap RF Power Feed-Through Capacitors with Band Conductor, Class 1 Ceramic SILVER MICA capacitor high voltage 1000 micro farad electrolytic capacitor avx film elco transformer MIL-C-11015	PDF
QUALCOMM MSM Abstract: TA0003 10MHz 10dBm oscillator gilbert Text: TA0003 TA0003 HBT Technology Adds Power to CDMA Chip Set Efficient bandwidth utilization and low operating power characterize code-division-multiple-access CDMA transmissions, capturing the interest of several major	Original	TA0003 RF9907 -45dB 10MHz 175MHz. QUALCOMM MSM TA0003 10MHz 10dBm oscillator gilbert	PDF
AC power line filtering capacitors Abstract: inductor 100 micro henry inductors 10 micro henry schematic diagram 48V telecom series 5 SLC xy capacitor 1000 micro farad aluminum electrolytic capacitor disc Piezoelectric crystal ups manufacturing transformer diagram elco transformer inductors 33 micro henry Text: 4 Cap Array: A/D: AC: Accu L: Accu F: Accu P: AccuGuard: Act ve Components: Alternating Current: Aluminum Electrolytic: Ambient Noise: Ambient Temperature: Ammo-Pack: Ampere: Analog Circuit: Anode: Automatic Insertion: Axial Leads: B Tolerance: Backpanel:	Original	S-TPG5M1098-N AC power line filtering capacitors inductor 100 micro henry inductors 10 micro henry schematic diagram 48V telecom series 5 SLC xy capacitor 1000 micro farad aluminum electrolytic capacitor disc Piezoelectric crystal ups manufacturing transformer diagram elco transformer inductors 33 micro henry	PDF
Granberg Abstract: AR305 create uhf vhf tv matching transformer "Good RF Construction Practices and Techniques" Practical Wideband RF Power Transformers ar164 Design of H. F. Wideband Power Transformers Building push-pull multioctave, VHF power amplifiers 300w amplifier rf power transformers Text: BUILDING PUSH-PULL, MULTIOCTAVE, VHF POWER AMPLIFIERS Prepared By H. ü. Granberg Motorola Semiconductor Products Sector Reprinted with permission of Microwaves & RF. November 1987 issue. 1987 Hayden Publishing Co. Inc., All rights reserved. MOTOROLA Semiconductor Products Inc.	OCR Scan	AR305/D Granberg AR305 create uhf vhf tv matching transformer "Good RF Construction Practices and Techniques" Practical Wideband RF Power Transformers ar164 Design of H. F. Wideband Power Transformers Building push-pull multioctave, VHF power amplifiers 300w amplifier rf power transformers	PDF

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MICROWAVES TRANSISTORS Search Results

MICROWAVES TRANSISTORS Result Highlights (5)

MICROWAVES TRANSISTORS Datasheets Context Search

12 km fm transmitter

UHV 806

D3C2040

varactor diode model in ADS

HP RF TRANSISTOR GUIDE

Untitled

bc237 smd

ad8307 power meter

ALTERNATOR REGULATOR 14v

GPPO

MRF873

s-band 50 Watt solid state power amplifier high p

2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

MRF873

SIT Static Induction Transistor

the working of IC 4047

MRF1507

C-Band Power GaAs FET HEMT Chips

cte2

MRF1507

AC power line filtering capacitors

QUALCOMM MSM

AC power line filtering capacitors

Granberg