MICROWAVE SEMICONDUCTOR S88 Search Results

MICROWAVE SEMICONDUCTOR S88 Result Highlights (5)

Part	Manufacturer	Description
TPHR7404PU	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MICROWAVE SEMICONDUCTOR S88 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
S8836B Abstract: Microwave Semiconductor s88 Text: MICROWAVE POWER GaAs FET S8836B MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER SUITABLE FOR C-BAND AMPLIFIER P1dB= 29.5 dBm at 8 GHz HIGH GAIN G1dB= 7.5 dB at 8 GHz ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta= 25°°C CHARACTERISTICS	Original	S8836B S8836B Microwave Semiconductor s88	PDF
MT4S300T Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors	Original	2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T	PDF
lg crt monitor circuit diagram Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY	PDF
uPD3599 Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117	PDF
SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER TRANS Abstract: huawei microwave Antennas SC1887 thales smd 68 wispry "RF Connector" tyco instruction sheet 411 3255 HUAWEI Base Station SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR HFSO1000-12 scintera application note 104 Text: JULY2010 ALSO PUBLISHED ONLINE: www.highfrequencyelectronics.com FEATURED PRODUCTS: MATERIALS,R&D SUPPORT, OSCILLATORS & SYNTHESIZERS INSIDE THIS ISSUE: Short-Range Transceiver Performance Circularly-Polarized Microwave Feed Fastest-Settling Type 2 PLL Design	Original	JULY2010 SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER TRANS huawei microwave Antennas SC1887 thales smd 68 wispry "RF Connector" tyco instruction sheet 411 3255 HUAWEI Base Station SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR HFSO1000-12 scintera application note 104	PDF
2sc5066 Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136 Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs	Original	SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136	PDF
B57030M Abstract: control circuit of induction cooker ptc tdk B57030 B43644 B43544 Text: EPCOS Application Guide 2014 Consumer Electronics Electronic Components for Home Appliances www.epcos.com EPCOS Components for Home Appliances The electronics content in home appliances continues to grow, not only to enable more powerful features and convenience of use, but increasingly to save energy. This	Original	M2020 B57030M control circuit of induction cooker ptc tdk B57030 B43644 B43544	PDF
epcos Abstract: induction cooker application notes B32669 siemens b78311 pa66-gf30 b57524k siemens B32335 B57895 siemens induction cooker Siemens capacitor B32335 Text: Application Guide 2008 Consumer Electronic Components for H o m e A p p l i a n c e s www.epcos.com Welcome to the World of Electronic Components and Modules EPCOS is a leading manufacturer of electronic components, modules and systems. Our broad portfolio includes capacitors, inductors and ferrites, EMC filters, sensors	Original		PDF
sc5 s dc 6v relay Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997	Original	Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503	PDF
micro servo 9g Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518	PDF
TGI8596-50 Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL Text: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4	Original	MSE-2008 MSE-2009 TGI8596-50 TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL	PDF
MMBD2104 Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932 Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a	Original	BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932	PDF
11175 Abstract: S8837A Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8837A TECHNICAL DATA FEATURES: • HIGH POWER PjdB = 31 dBm at f — 8 GHz ■ HIGH GAIN G1dB = 7dB at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	S8837A S8837A 11175	PDF
S8835 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8835 TECHNICAL DATA FEATURES: • HIGH POWER P^B = 24 dBm at f = 8 GHz ■ HIGH GAIN G-jjb = 8 dB at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	S8835 S8835	PDF

S8851 Abstract: S885T Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8851 TECHNICAL DATA FEATURES: • HIGH POWER P^dB“ 24 dBm at f = 15 GHz ■ ■ HIGH GAIN G1dB = 8 dB ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION at f = 15 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	S8851 S885T 15GHz S8851 S885T	PDF
S8853 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8853 TECHNICAL DATA FEATURES: • ■ HIGH POWER P-jdB = 2 8 dBm at f = 15 GHz HIGH GAIN G1dB = 7 dB at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	S8853 S8853	PDF
S8855 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8855 TECHNICAL DATA FEATURES: • ■ HIGH POWER p1 d B ~ 31.5 dBm at f = 15 GHz HIGH GAIN G\|dB = 6.5 dB at f = 15 GHz SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	S8855 15GHz -S8855- S8855	PDF
S8834 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER Ga As FET MICROWAVE SEMICONDUCTOR S8834 TECHNICAL DATA FEATURES: • SUITABLE FOR Ç-BAND AM PLIFIER M ED IU M POWER IdB = 21 dBm at f = 8 G Hz ION IMPLANTATION HJGH GAIN MdB = 9 dB at f = 8 G Hz RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	S8834 S8834	PDF
S8836A Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA S8836A FEATURES: • HIGH POWER — 29.5 dBm at f = 8 GHz m ■ SUITABLE FOR C-BAND AMPLIFIER HIGH GAIN MdB = 7.5 dB at f = 8 GHz ■ ION IMPLANTATION RF PERFO RM ANCE S P E C IF IC A T IO N S {Ta = 25°C	OCR Scan	S8836A S8836A	PDF
S8838A Abstract: No abstract text available Text: TOSHIBA M IC R O W A VE POWER GaAs FE T S8838A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES: • HIGH POWER = 3 3 .5 dBm at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ■ HIGH GAIN J1dB = 5.5 dB at f = 8 GHz ION IMPLANTATION RF PERFO RM AN CE S P E C IF IC A T IO N S T a = 25°C	OCR Scan	S8838A S8838A	PDF
NE32184A Abstract: NE32100 NE32183A nec ne3 INE32184A Text: NE C/ CALIFORNIA 3QE D tiMSTMlM Ü0Ü20SM fl • NECC 7 r .j/-z r r ULTRA LOW NOISE K-BAND HETRO JUNCTION FET NE32100 NE32183A NE32184A OUTLINE DIMENSIONS FEATURES • SUPER LOW NOISE FIGURE: NF = 1.0 d B T Y P a tf = 12 GHz NE32100 CHIP • HIGH ASSOCIATED GAIN:	OCR Scan	bM27M14 0G205M NE32100 NE32183A NE32184A NE321 associat105 34-6393/FAX S88-0279 NOT1CE-1848 NE32184A NE32100 NE32183A nec ne3 INE32184A	PDF
stepping motor EPSON EM - 234 Abstract: EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A Text: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B. T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system	OCR Scan	RS232 RS232C stepping motor EPSON EM - 234 EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A	PDF
TCA965 equivalent Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401 Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated	OCR Scan	DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401	PDF
GFB7400D Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409 Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest	OCR Scan		PDF

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MICROWAVE SEMICONDUCTOR S88 Search Results

MICROWAVE SEMICONDUCTOR S88 Result Highlights (5)

MICROWAVE SEMICONDUCTOR S88 Datasheets Context Search

S8836B

MT4S300T

lg crt monitor circuit diagram

uPD3599

SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER TRANS

2sc5066

B57030M

epcos

sc5 s dc 6v relay

micro servo 9g

TGI8596-50

MMBD2104

11175

S8835

S8851

S8853

S8855

S8834

S8836A

S8838A

NE32184A

stepping motor EPSON EM - 234

TCA965 equivalent

GFB7400D