Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MICROWAVE POWER GAAS FET DATA Search Results

    MICROWAVE POWER GAAS FET DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    MICROWAVE POWER GAAS FET DATA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 2571 4 pin

    Abstract: gl 2576 NEZ7785-15D NEZ3642-15D NEZ4450-15D NEZ5964-15D NEZ6472-15D nez5964-15dd
    Text: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer 0.5 ±0.1 for microwave and satellite communications.


    Original     		PDF

    C-Band Power GaAs FET

    Abstract: NEZ3642-4D NEZ3642-8D NEZ4450-4D NEZ4450-8D NEZ5964-4D NEZ5964-8D NEZ6472-4D NEZ7177-4D NEZ7785-4D
    Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm 0.5±0.1 The NEZ Series of microwave power GaAs FETs offer C1.5 4PLACES GATE 2.5MIN. high output power, high gain and high efficiency at C-band


    Original     		PDF

    TIM5867-8UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5867-8UL MICROWAVE SEMICONDUCTOR Preliminary TECHNICAL DATA FEATURES „ HIGH POWER P1dB=39.5dBm at 5.85GHz to 6.75GHz „ HIGH GAIN G1dB=10.0dB at 5.85GHz to 6.75GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE


    Original     		PDF TIM5867-8UL 85GHz 75GHz 2-11D1B) TIM5867-8UL

    TIM1314-30L

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz


    Original     		PDF TIM1314-30L 75GHz -25dBc 7-AA03A) TIM1314-30L

    7-AA03A

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz


    Original     		PDF TIM1314-30L 75GHz -25dBc 7-AA03A) 7-AA03A

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz


    Original     		PDF TIM1314-30L 75GHz -25dBc 7-AA03A)

    TIM5867-30UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5867-30UL MICROWAVE SEMICONDUCTOR Preliminary TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 5.85GHz to 6.75GHz „ HIGH GAIN G1dB=10.0dB at 5.85GHz to 6.75GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE


    Original     		PDF TIM5867-30UL 85GHz 75GHz 7-AA05A) TIM5867-30UL

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM3742-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM3742-4SL TIM3742-4UL 95GHz

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION


    Original     		PDF TIM1314-9L 75GHz -25dBc 33dBm

    tim8996-30

    Abstract: 7-AA03A
    Text: MICROWAVE POWER GaAs FET TIM8996-30 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0dBm at 8.9GHz to 9.6GHz „ HIGH GAIN G1dB=7.0dB at 8.9GHz to 9.6GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM8996-30 7-AA03A) tim8996-30 7-AA03A

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM5359-4UL

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5964-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM5964-30UL 2-16G1B)

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM6472-30UL 7-AA05A)

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5964-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM5964-6UL Int38 15GHz

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.0dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM5359-16UL

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM7785-30UL 7-AA05A)

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM4450-4UL

    TIM7785-4UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM7785-4UL TIM7785-4UL

    TIM7785-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM7785-16UL TIM7785-16UL

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band


    OCR Scan     		PDF NEZ3642-4D, NEZ4450-4D, NEZ5964ter

    nec 2571

    Abstract: nec 2571 4 pin NEC 1357 ez 946 k 3918 fet IMS 3630
    Text: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION P A C K A G E D IM EN SIO N S unit: mm The N EZ Series of microwave power GaAs FE T s offer 0.5 +0.1 high output power, high gain and high efficiency at C-band


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.


    OCR Scan     		PDF NE960R5 NE961R500 NE960R500 NE960R575 NE962R575 P14387E

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.


    OCR Scan     		PDF NE960R2 NE961R200 NE960R200 NE960R275 P13775E

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER G aAs FET N-CHANNEL G aAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The N EZ Series of microwave power G aAs FET s offer high output power, high gain and high efficiency at C-band


    OCR Scan     		PDF NEZ3642-4D,