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    MICROWAVE POWER GAAS FET DATA Search Results

    MICROWAVE POWER GAAS FET DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd

    MICROWAVE POWER GAAS FET DATA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    nec 2571 4 pin

    Abstract: gl 2576 NEZ7785-15D NEZ3642-15D NEZ4450-15D NEZ5964-15D NEZ6472-15D nez5964-15dd
    Text: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer 0.5 ±0.1 for microwave and satellite communications.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band


    OCR Scan     		NEZ3642-4D, NEZ4450-4D, NEZ5964ter PDF

    C-Band Power GaAs FET

    Abstract: NEZ3642-4D NEZ3642-8D NEZ4450-4D NEZ4450-8D NEZ5964-4D NEZ5964-8D NEZ6472-4D NEZ7177-4D NEZ7785-4D
    Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm 0.5±0.1 The NEZ Series of microwave power GaAs FETs offer C1.5 4PLACES GATE 2.5MIN. high output power, high gain and high efficiency at C-band


    Original     		PDF

    nec 2571

    Abstract: nec 2571 4 pin NEC 1357 ez 946 k 3918 fet IMS 3630
    Text: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION P A C K A G E D IM EN SIO N S unit: mm The N EZ Series of microwave power GaAs FE T s offer 0.5 +0.1 high output power, high gain and high efficiency at C-band


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.


    OCR Scan     		NE960R5 NE961R500 NE960R500 NE960R575 NE962R575 P14387E PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.


    OCR Scan     		NE960R2 NE961R200 NE960R200 NE960R275 P13775E PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER G aAs FET N-CHANNEL G aAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The N EZ Series of microwave power G aAs FET s offer high output power, high gain and high efficiency at C-band


    OCR Scan     		NEZ3642-4D, PDF

    TIM5867-8UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5867-8UL MICROWAVE SEMICONDUCTOR Preliminary TECHNICAL DATA FEATURES „ HIGH POWER P1dB=39.5dBm at 5.85GHz to 6.75GHz „ HIGH GAIN G1dB=10.0dB at 5.85GHz to 6.75GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE


    Original     		TIM5867-8UL 85GHz 75GHz 2-11D1B) TIM5867-8UL PDF

    TIM1314-30L

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz


    Original     		TIM1314-30L 75GHz -25dBc 7-AA03A) TIM1314-30L PDF

    7-AA03A

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz


    Original     		TIM1314-30L 75GHz -25dBc 7-AA03A) 7-AA03A PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz


    Original     		TIM1314-30L 75GHz -25dBc 7-AA03A) PDF

    TIM5867-30UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5867-30UL MICROWAVE SEMICONDUCTOR Preliminary TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 5.85GHz to 6.75GHz „ HIGH GAIN G1dB=10.0dB at 5.85GHz to 6.75GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE


    Original     		TIM5867-30UL 85GHz 75GHz 7-AA05A) TIM5867-30UL PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM3742-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM3742-4SL TIM3742-4UL 95GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION


    Original     		TIM1314-9L 75GHz -25dBc 33dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM5359-4UL PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5964-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM5964-30UL 2-16G1B) PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM6472-30UL 7-AA05A) PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5964-6UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM5964-6UL Int38 15GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1414-18L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=42.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION


    Original     		TIM1414-18L -25dBc 36dBm 25GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5359-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 5.3GHz to 5.9GHz „ HIGH GAIN G1dB=10.0dB at 5.3GHz to 5.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM5359-16UL PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-30UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=45.0 dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM7785-30UL 7-AA05A) PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM4450-4UL PDF

    TIM7785-4UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM7785-4UL TIM7785-4UL PDF

    TIM7785-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM7785-16UL TIM7785-16UL PDF