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    MICROWAVE POWER GAAS Search Results

    MICROWAVE POWER GAAS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    MICROWAVE POWER GAAS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    high power fet amplifier schematic

    Abstract: GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
    Text: Application of Loadline Simulation to Microwave High Power Amplifiers Edward L. Griffin Abstract Loadline theory is described as applied to high power microwave amplifiers. An example design with simulation is presented. Introduction The design of microwave GaAs high power amplifiers HPAs to demanding


    Original     		30FETs 20FETs 12-Watt high power fet amplifier schematic GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal PDF

    CLX34

    Abstract: CLX34-00 CLX34-05 CLX34-10
    Text: CLX34 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		CLX34 CLX34-00 MWP-25 CLX34-05 CLX34-10 CLX34-nn: QS9000 CLX34 CLX34-00 CLX34-05 CLX34-10 PDF

    CLY35

    Abstract: CLY35-00 CLY35-05 CLY35-10
    Text: CLY35 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		CLY35 CLY35-00 MWP-35 CLY35-05 CLY35-10 CLY35-nn: QS9000 CLY35 CLY35-00 CLY35-05 CLY35-10 PDF

    CLY38

    Abstract: CLY38-00 CLY38-05 CLY38-10
    Text: CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		CLY38 CLY38-00 MWP-35 CLY38-05 CLY38-10 CLY38-nn: QS9000 CLY38 CLY38-00 CLY38-05 CLY38-10 PDF

    CLY32

    Abstract: CLY32-00 CLY32-05 CLY32-10
    Text: CLY32 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 6 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		CLY32 CLY32-00 MWP-25 CLY32-05 CLY32-10 CLY32-nn: QS9000 CLY32 CLY32-00 CLY32-05 CLY32-10 PDF

    CLX32

    Abstract: CLX32-00 CLX32-05 CLX32-10
    Text: CLX32 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		CLX32 CLX32-00 MWP-25 CLX32-05 CLX32-10 CLX32-nn: QS9000 CLX32 CLX32-00 CLX32-05 CLX32-10 PDF

    CLX27

    Abstract: CLX27-00 CLX27-05 CLX27-10
    Text: CLX27 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		CLX27 CLX27-00 MWP-25 CLX27-05 CLX27-10 CLX27-nn: QS9000 CLX27 CLX27-00 CLX27-05 CLX27-10 PDF

    CLY29

    Abstract: CLY29-00 CLY29-05 CLY29-10
    Text: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		CLY29 CLY29-00 MWP-25 CLY29-05 CLY29-10 CLY29-nn: QS9000 CLY29 CLY29-00 CLY29-05 CLY29-10 PDF

    CLY29

    Abstract: CLY29-00 CLY29-05 CLY29-10 GMW05880 IDp12
    Text: CLY29. HiRel C-Band GaAs Power- MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		CLY29. CLY29-00 MWP-25 CLY29-05 CLY29-10 CLY29 CLY29-00 CLY29-05 CLY29-10 GMW05880 IDp12 PDF

    CLX27

    Abstract: CLX27-00 CLX27-05 CLX27-10 GMW05880 049 01169
    Text: CLX27. HiRel X- Band GaAs Power- MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		CLX27. CLX27-00 MWP-25 CLX27-05 CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10 GMW05880 049 01169 PDF

    CLX30

    Abstract: CLX30-00 CLX30-05 CLX30-10
    Text: CLX30 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application


    Original     		CLX30 CLX30-00 MWP-25 CLX30-05 CLX30-10 CLX30-nn: QS9000 CLX30 CLX30-00 CLX30-05 CLX30-10 PDF

    CLY38

    Abstract: CLY38-00 CLY38-05 CLY38-10
    Text: CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application


    Original     		CLY38 CLY38-00 MWP-35 CLY38-05 CLY38-10 CLY38-nn: QS9000 CLY38 CLY38-00 CLY38-05 CLY38-10 PDF

    CLY29

    Abstract: CLY29-00 CLY29-05 CLY29-10
    Text: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application


    Original     		CLY29 CLY29-00 MWP-25 CLY29-05 CLY29-10 CLY29-nn: QS9000 CLY29 CLY29-00 CLY29-05 CLY29-10 PDF

    CLX30

    Abstract: CLX30-00 CLX30-05 CLX30-10 siemens 230 98 O
    Text: CLX30 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application


    Original     		CLX30 CLX30-00 MWP-25 CLX30-05 CLX30-10 CLX30-nn: QS9000 CLX30 CLX30-00 CLX30-05 CLX30-10 siemens 230 98 O PDF

    TPM2626-60

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TPM2626-60 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n High Power P1dB=48.0dBm TYP. at 2.6GHz n n Partially Matched Type n Hermetically Sealed Package High Power Gain G1dB=10dB(TYP.) at 2.6GHz RF PERFORMANCE SPECIFICATIONS (Ta=25 o C)


    Original     		TPM2626-60 TPM2626-60 PDF

    S9G66A

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET N on-M atched MICROWAVE SEMICONDUCTOR S9G66A Preliminary TECHNICAL DATA SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL PldB


    OCR Scan     		S9G66A S9G66A PDF

    371 fet

    Abstract: TIM1414-4LA-371
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation


    OCR Scan     		TIM1414-4LA-371 371 fet TIM1414-4LA-371 PDF

    TIM1414-4LA-371

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation


    OCR Scan     		TIM1414-4LA-371 TIM1414-4LA-371 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA TIM1414-8-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA CHARACTERISTICS Output Power at ldB Gain Compression Point Power Gain at ldB Gain Compression Point Drain Current Power Added Efficiency SYMBOL PldB G ldB CONDITION VDD=9V


    OCR Scan     		120mA 2-11C1B) PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET Non-Matched S9666A Preliminary 1. RF PERFORMANCE SPECIFICATIONS Ta= 25° C Ì CHARACTERISTICS Output Power at IdB Compression Point Power Gain at IdB Compression Point Drain Current


    OCR Scan     		S9666A PDF

    JS9P05-AS

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •HIG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= 6. 5dB f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB


    OCR Scan     		JS9P05-AS 28dBm 38GHz JS9P05-AS PDF

    JS9P04-AS

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P04-AS FEATURES: •HIGH POWER P1dB=26. OdBm @ f = 38GHz ■CHIP FORM BHIGH GAIN GldB= 6. 5dB @ f =38GHz RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Compression Point


    OCR Scan     		JS9P04-AS 38GHz 38GHz JS9P04-AS PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB


    OCR Scan     		28dBm JS9P05-AS 38GHz PDF

    S9G67A

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET Non-Matched MICROWAVE SEMICONDUCTOR TECHNICAL DATA S9G67A Preliminary 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent


    OCR Scan     		S9G67A S9G67A PDF