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    MICROWAVE OSCILLATOR BJT Search Results

    MICROWAVE OSCILLATOR BJT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74LS626N Rochester Electronics LLC 74LS626 - Voltage Controlled Oscillator Visit Rochester Electronics LLC Buy
    ISL55016IRTZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Differential Amplifier Visit Renesas Electronics Corporation
    ISL55014IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation
    ISL55012IEZ-EVAL Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Evaluation Board Visit Renesas Electronics Corporation
    ISL55015IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation

    MICROWAVE OSCILLATOR BJT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    84-1LMI

    Abstract: GaN matching 100 watt NBT-168 MMB-330 NBT-168-D NBT-168-T1 GaN Amplifier 12GHz GaN Bias 25 watt 168E BJT IC Vce
    Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,


    Original     		NBT-168 12GHz NBT-168 12GHz. NBT-168-D) NBT-168) 84-1LMI GaN matching 100 watt MMB-330 NBT-168-D NBT-168-T1 GaN Amplifier 12GHz GaN Bias 25 watt 168E BJT IC Vce PDF

    NBT-168

    Abstract: NBT-168-D NBT-168-T1 35 micro-X ceramic Package
    Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,


    Original     		NBT-168 12GHz NBT-168 12GHz. NBT-168-D) NBT-168) NBT-168-D NBT-168-T1 35 micro-X ceramic Package PDF

    Untitled

    Abstract: No abstract text available
    Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,


    Original     		NBT-168 12GHz NBT-168 12GHz. NBT-168-D) NBT-168) PDF

    84-1LMI

    Abstract: NBT-168 NBT-168-D NBT-168-T1 BO 336 choke flange
    Text: NBT-168 4 MICROWAVE GaInP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier GENERAL PURPOSE AMPLIFIERS 4 Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,


    Original     		NBT-168 12GHz NBT-168 12GHz. NBT-1685 NBT-168) 84-1LMI NBT-168-D NBT-168-T1 BO 336 choke flange PDF

    varactor diode model in ADS

    Abstract: zo 607 transistor zo 607 ADS varactor diode yig oscillator hp working of colpitts oscillator common emitter bjt how to test Triode Thyristors applications of blocking oscillator triode
    Text: Advanced Design System 2001 Oscillator DesignGuide August 2001 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		Index-31 varactor diode model in ADS zo 607 transistor zo 607 ADS varactor diode yig oscillator hp working of colpitts oscillator common emitter bjt how to test Triode Thyristors applications of blocking oscillator triode PDF

    Nonlinear Effects In Oscillators and Synthesizers

    Abstract: 50MHz Colpitts FUJITSU MICROWAVE TRANSISTOR 2058d yig tuned oscillator digital phase shift DC 6GHz fujitsu X-band amplifier rohde MARCONI abstract of Colpitts oscillator
    Text: Nonlinear Effects In Oscillators and Synthesizers Invited Ulrich L. Rohde Chairman, Synergy Microwave Corporation, Paterson, New Jersey ulr@synergymwave.com Abstract - The proposed paper shows existing problems in VCO’s and synthesizers due to the nonlinearities in the active devices and external integrated circuits. This paper proposes a design


    Original     		PDF

    recent advances in linear vco calculations

    Abstract: rohde variable frequency generator 2058d 50MHz Colpitts VCO Design Considerations for BJT Active Mixers led calvin frequency stability analysis colpitts oscillator 012579OB2 transistors for uhf oscillators
    Text: RECENT ADVANCES IN LINEAR VCO CALCULATIONS, VCO DESIGN AND SPURIOUS ANALYSES OF FRACTIONAL-N SYNTHESIZERS By Ulrich L. Rohde* Günther Klage * INTRODUCTION Modern advanced synthesizers take advantage of the fractional synthesis principle where the noise of the synthesizer inside the loop bandwidth is mainly controlled by all the active


    Original     		10MHz 15KHz. recent advances in linear vco calculations rohde variable frequency generator 2058d 50MHz Colpitts VCO Design Considerations for BJT Active Mixers led calvin frequency stability analysis colpitts oscillator 012579OB2 transistors for uhf oscillators PDF

    Voltage Controlled Oscillators

    Abstract: SAW Oscillators clapp oscillator bjt oscillator BJT phase shift oscillator rohde tuner rohde BB141 noise diode generator power bjt advantages and disadvantages
    Text: VOLTAGE CONTROLLED OSCILLATORS INTRODUCTION The steady-state loop equations are In simple terms, an oscillator is an amplifier where sufficient energy is coupled back from the output to the input to become unstable and start oscillating. The output port then provides the wanted output


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    EEsof Circuit Components for Manual for ADS

    Abstract: No abstract text available
    Text: Agilent GENESYS Affordable • Accurate • Easy-to-Use An integrated simulation and synthesis design tool for RF/microwave circuit board and subsystem designers Agilent Genesys is an affordable, accurate, easy-to-use RF and microwave simulation tool created for the circuit


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    af126

    Abstract: NE68819 AN1026 NE68519 NE688 NE68800 White Noise Drive Base BJT TR320 MJE 131
    Text: California Eastern Laboratories APPLICATION NOTE AN1026 1/f Noise Characteristics Influencing Phase Noise Abstract In applications such as VCO’s where 1/f noise is one of the major contributors to phase noise, the device with the best 1/f noise will yield the best phase noise. To better understand


    Original     		AN1026 1e-13 2e-12 20-e-13 af126 NE68819 AN1026 NE68519 NE688 NE68800 White Noise Drive Base BJT TR320 MJE 131 PDF

    clapp oscillator

    Abstract: bjt oscillator application note BJT phase shift oscillator AN061 AN-061 BBY58 BBY58-02V BFR360F bjt oscillator Varactor Diode RF
    Text: Application Note No. 061 Silicon Discretes W-CDMA 2.3 GHz VCO using BFR360F and BBY58-02V Features • Low phase noise of < -90 dBc / Hz at 10 kHz using a low Q resonator. • 0 dBm output power at low current consumption. 2 3 1 • Highly linear oscillation frequency


    Original     		BFR360F BBY58-02V BFR360F AN061 clapp oscillator bjt oscillator application note BJT phase shift oscillator AN061 AN-061 BBY58 BBY58-02V bjt oscillator Varactor Diode RF PDF

    clapp oscillator

    Abstract: history of varactor diode BFR36 BFR360 BBY58-02V BFR360F N061 SC79 transistor oscillator circuit BJT phase shift oscillator
    Text: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 6 1 W - C D M A 2 . 3 G H z V C O u s i n g B F R 3 60 F an d B B Y 58 - 0 2 V S m a l l S i g n a l D i s c r et e s Edition 2006-11-07 Published by Infineon Technologies AG


    Original     		THE90 BFR360F clapp oscillator history of varactor diode BFR36 BFR360 BBY58-02V N061 SC79 transistor oscillator circuit BJT phase shift oscillator PDF

    clapp oscillator

    Abstract: history of varactor diode BFR360 BBY58-02V BFR360F N061 SC79 varactor diode q factor measurement
    Text: A pp li c at i on N ot e , R ev . 2. 0 , N ov . 2 00 6 A p p li c a t i o n N o t e N o . 0 6 1 W - C D M A 2 . 3 G H z V C O u s i n g B F R 3 60 F an d B B Y 58 - 0 2 V R F & P r o t e c ti o n D e v i c e s Edition 2006-11-07 Published by Infineon Technologies AG


    Original     		THE90 BFR360F clapp oscillator history of varactor diode BFR360 BBY58-02V N061 SC79 varactor diode q factor measurement PDF

    siliconix vmp4

    Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
    Text: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc


    Original     		99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet PDF

    a02 Transistor rf

    Abstract: RF transistors with s-parameters stripline power combiner splitter transistor RF S-parameters Hall Siemens high power transistor s-parameters HPIB CONTROLLER RF Transistor s-parameter TRANSISTOR noise figure measurements application Transistor SP-30
    Text: Application Note No. 008 Discrete & RF Semiconductors G. Lohninger L. Musiol Measure 3 Types of Parameter and You’ll Define a Small Signal RF-Transistor: S-Parameter, Noise-Figure and Intermodulation With the increasing need to reduce development time, RF Designers are


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    bjt npn m03

    Abstract: BR 123 m03 bjt npn 2SC5437 NE688 NE688M03 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.4±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • • PACKAGE OUTLINE M03


    Original     		NE688M03 NE688M03 24-Hour bjt npn m03 BR 123 m03 bjt npn 2SC5437 NE688 S21E PDF

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


    Original     		D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download PDF

    UPA826TC-T1

    Abstract: BF109 NE685 S21E UPA826TC vaf meter
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TC FEATURES DESCRIPTION • SMALL PACKAGE STYLE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high The UPA826TC contains two NE685 NPN high frequency


    Original     		UPA826TC OT-363 UPA826TC NE685 UPA826TC-T1 BF109 S21E vaf meter PDF

    transistor MJE -1103

    Abstract: NE AND micro-X 2SC5432 NE856 NE856M03 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


    Original     		NE856M03 NE856M03 transistor MJE -1103 NE AND micro-X 2SC5432 NE856 S21E PDF

    stripline power combiner splitter

    Abstract: RF transistors with s-parameters HP6626 transistor RF S-parameters AN008 HPIB CONTROLLER 8970B
    Text: Application Note No. 008 Discrete & RF Semiconductors G. Lohninger L. Musiol Measure 3 Types of Parameter and You'll Define a Small Signal RF-Transistor: S-Parameter, Noise-Figure and Intermodulation With the increasing need to reduce development time, RF Designers are


    Original     		PDF

    2SC5437

    Abstract: NE688 NE688M03 S21E 15E14
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.2±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • PACKAGE OUTLINE M03


    Original     		NE688M03 NE688M03 2SC5437 NE688 S21E 15E14 PDF

    20000w audio amplifier circuit diagram

    Abstract: Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767
    Text: 2nd edition RF Manual product & design manual for RF small signal discretes product & design manual for RF small signal discretes 2nd edition October 2002 Page: 1 2nd edition RF Manual product & design manual for RF small signal discretes Content 1. 2. 3.


    Original     		BB202, BGA6589 20000w audio amplifier circuit diagram Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767 PDF

    Untitled

    Abstract: No abstract text available
    Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier 2.94 min 3.28 max Pin 1 Indicator E S Lid ID 1.70 min 1.91 max 2.39 min 2.59 max W N E GaAs HBT Si Bi-CMOS SiGe HBT


    Original     		NBT-168 12GHz NBT-168 12GHz. NBT-168-D) NBT-168) PDF

    bjt oscillator

    Abstract: westinghouse oscillator clapp oscillator BJT phase shift oscillator
    Text: VOLTAGE CONTROLLED OSCILLATORS Introduction In simple terms, an oscillator is an amplifier where sufficient energy is coupled back from the output to the input to become unstable and start oscillating. The output port then provides the wanted output power into the load and the overall circuit


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