60GHz mixer
Abstract: Schottky Barrier Diode KBM-N56 Microwave GaAs schottky Diode mixer KBM-N56-2 60Ghz harmonic mixer schottky diode circuit symbol 60GHz transistor KBM-N56-1 Microwave schottky Diode mixer
Text: Schottky Barrier Diode GaAs KBM-N56-2 DIMENSIONS (Unit : um) KBM-N56-2 is a GaAs flip chip anti-parallel pair Schottky diode designed for use as harmonic mixer element at microwave and millimeterwave frequencies. Their high cut-off frequency insures good performance
|
Original
|
KBM-N56-2
KBM-N56-2
100GHz.
30GHz
60GHz
KBM-N56-1
60GHz mixer
Schottky Barrier Diode KBM-N56
Microwave GaAs schottky Diode mixer
harmonic mixer
schottky diode circuit symbol
60GHz transistor
Microwave schottky Diode mixer
|
PDF
|
KBM-N56-1
Abstract: 30GHz diode 60GHz mixer 60Ghz 60GHz transistor schottky diode circuit symbol
Text: Schottky Barrier Diode GaAs KBM-N56-1 DIMENSIONS (Unit : um) KBM-N56-1 is a GaAs flip chip Schottky diode which is designed for use as mixer and detector elements at microwave and millimeterwave frequencies. The flip chip configuration is suitable for pick and place insertion.
|
Original
|
KBM-N56-1
KBM-N56-1
30GHz
60GHz
30GHz diode
60GHz mixer
60GHz transistor
schottky diode circuit symbol
|
PDF
|
nitride
Abstract: KBM-N56-1
Text: NEW PRODUCT GaAs Flip Chip Schottky Diodes KBM-N56-1 Description This KBM-N56-1 is a GaAs flip chip Schottky diode which is designed for use as mixer and detector elements at microwave and millimeter wave frequencies. The diode are fully passivated with silicon nitride for
|
Original
|
KBM-N56-1)
KBM-N56-1
nitride
|
PDF
|
CHM1193
Abstract: k-band gaas schottky diode
Text: CHM1193 K-Band Mixer GaAs Monolithic Microwave IC Description The CHM1193 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the Schottky diode process : 1 µm Schottky
|
Original
|
CHM1193
CHM1193
CHM1192.
DSCHM11930077
17-Mar-00
k-band gaas schottky diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CHM2179a W-band Mixer GaAs Monolithic Microwave IC Description LO RF The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via
|
Original
|
CHM2179a
CHM2179a
100MHz
DSCH21790192
22-Jun-00
|
PDF
|
CHM1190
Abstract: CHM1191
Text: CHM1191 K Band Mixer GaAs Monolithic Microwave IC Description The CHM1191 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the BESMMIC process: 1 µm Schottky diode
|
Original
|
CHM1191
CHM1191
CHM1190.
DSCHM11919025
CHM1190
|
PDF
|
KT 804
Abstract: kt 803 SBL-121 SBL-221 SBL-801 KT 802 EN3056
Text: Ordering number:EN3056 SBL Series Beam Lead Type GaAs Schottky Barrier Diode C to Millimeter Band Mixer, Detector, Modulator Applications Features Package Dimensions • Facilitates easy mounting on MIC Microwave IC . · Less parastic components, conversion loss.
|
Original
|
EN3056
SBL-121,
12GHz
SBL-801
SBL-221
22GHz
KT 804
kt 803
SBL-121
SBL-221
KT 802
EN3056
|
PDF
|
HMC350MS8
Abstract: 2.2 GHz local oscillator
Text: HMC350MS8 MICROWAVE CORPORATION HIGH IP3 SINGLE-BALANCED MIXER 0.6 - 1.2 GHz FEBRUARY 2001 V00.1200 Features General Description CONVERSION LOSS: 7.5 dB The HMC350MS8 is a miniature single balanced mixer in an 8 lead plastic surface mount package. The passive GaAs schottky diode mixer
|
Original
|
HMC350MS8
HMC350MS8
2.2 GHz local oscillator
|
PDF
|
HMC351S8
Abstract: No abstract text available
Text: HMC351S8 MICROWAVE CORPORATION HIGH IP3 DOUBLE-BALANCED MIXER 0.7 - 1.1 GHz FEBRUARY 2001 V00.1200 Features General Description CONVERSION LOSS: 9.5 dB The HMC351S8 is a double balanced mixer in an 8 lead plastic surface mount package. The passive GaAs schottky diode mixer implements
|
Original
|
HMC351S8
HMC351S8
|
PDF
|
HMC316MS8
Abstract: No abstract text available
Text: HMC316MS8 MICROWAVE CORPORATION HIGH IP3 DOUBLE-BALANCED MIXER 1.5 - 3.5 GHz FEBRUARY 2001 V00.1200 Features General Description Conversion Loss: 8 dB The HMC316MS8 is a miniature double balanced mixer in an 8 lead plastic surface mount package. The passive GaAs schottky diode
|
Original
|
HMC316MS8
HMC316MS8
higMC316MS8
|
PDF
|
lO37
Abstract: CHM1193
Text: CHM1192 K- Band Mixer GaAs Monolithic Microwave IC Description LO IF RF -2 Conversion gain dB The CHM1192 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the
|
Original
|
CHM1192
CHM1192
CHM1193.
DSCHM11929042
lO37
CHM1193
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GaAs Schottky Diodes TM MS8001 – MS8004 Packaged and Bondable Chips Features Low-Noise Performance High Cut-off Frequency Passivated to Enhance Reliability Packaged Diodes and Bondable Chips Applications Single and Balanced Mixers and Detectors Transceivers X, K and Ka Bands
|
Original
|
MS8001
MS8004
MS8000
Maximum015
|
PDF
|
k and ka band radar detector
Abstract: MS8000 MS8004 MS8001-P10 noise diode Microwave schottky Diode mixer RF Microwave schottky Diode mixer MS8001 m38 schottky MS8002
Text: GaAs Schottky Diodes TM MS8001 – MS8004 Packaged and Bondable Chips Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors
|
Original
|
MS8001
MS8004
MS8000
k and ka band radar detector
MS8004
MS8001-P10
noise diode
Microwave schottky Diode mixer
RF Microwave schottky Diode mixer
MS8001
m38 schottky
MS8002
|
PDF
|
MS8001
Abstract: m38 schottky
Text: GaAs Schottky Diodes TM MS8001 – MS8004 Packaged and Bondable Chips Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors
|
Original
|
MS8001
MS8004
MS8000
In015
MS8001
m38 schottky
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: P ^pi GEC PLESSEY DC1331 GaAs SCHOTTKY X-BAND WAVEGUIDE INTEGRAL LIMITER MIXER DIODE This diode is used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as a sensitive broadband detector at high microwave
|
OCR Scan
|
DC1331
375GHz
150pA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: united monolithic semiconductors * °JV\‘V •* ^ c. $ , C \ * % V * CHM1192 ^ K- Band Mixer GaAs Monolithic Microwave IC Description The CHM1192 is a balanced Schottky diode mixer based on a six-quarter wave ring structure. It could be use in receiver or
|
OCR Scan
|
CHM1192
CHM1192
CHM1193.
DSCHM11929042_
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • 37bô5E2 D016455 TOS « P L S B Si GEC PLE S S EY SEMICONDUCTORS DC1331 GaAs SCHOTTKY X-BAND WAVEGUIDE INTEGRAL LIMITER MIXER DIODE This diode is used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as a sensitive broadband detector at high microwave
|
OCR Scan
|
D016455
DC1331
600mV
700mV
150fF
375GHz
|
PDF
|
DSCHM11939042
Abstract: No abstract text available
Text: united monolithic semiconductors .¿few « « «« » o e « 9 »® < S > ® /nmmh hno C H M l 193 w K-Band Mixer _ GaAs Monolithic Microwave IC Description The CHM1193 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or
|
OCR Scan
|
CHM1193
CHM1192.
DSCHM11939042
DSCHM11939042
|
PDF
|
MGF3000
Abstract: MGF-3000
Text: TÏ DE I t.HM'ìflS'ì 0010073, 3 | ~ MITSUBISHI SEMICONDUCTOR <GaAs FET> 6249829 MITSUBISHI D I S C R E T E SC DESCRIPTION herm etically D T.07-07 FOR MICROWAVE LOW-NOISE MIXERS SCHOTTKY BARRIER DIODE OUTLINE DRAWING The M G F 3 0 0 0 is designed fo r use in S- to Ku-band mixers.
|
OCR Scan
|
MGF3000
GG1DD75
MGF3000
MGF-3000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: u n ite d * „ m o n o lith ic sem ico n d u cto rs « »A " : / nU m h h n n CHMl 190 «9V K Band Mixer . GaAs Monolithic Microwave IC t Description The CHM1190 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or
|
OCR Scan
|
CHM1190
CHM1191.
DSCHM11909025
|
PDF
|
Untitled
Abstract: No abstract text available
Text: u n ited m o n o lith ic sem ico n du ctors « » *„ : nuM H H n-i C H M l 191 r K Band Mixer . GaAs Monolithic Microwave IC t Description The CHM1191 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or
|
OCR Scan
|
CHM1191
CHM1190.
DSCHM11919025
|
PDF
|
Gunn Diode
Abstract: Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
Text: Product List TYPE No. DESCRIPTION DA1304 DA1307 MILLIMETRE WAVE BALANCED MIXER 34.0 to 34.4GHz BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER
|
OCR Scan
|
DA1304
DA1307
DA1321
DA1321-1
DA1338
DA1338-1
DA1338-2
DA1338-3
DA1349-2
DA1349-4
Gunn Diode
Microwave Silicon Detector Diode
DW9248
microwave waveguide
Marconi gunn
Silicon Detector
UHF diode
varactor diode filter
varactor
|
PDF
|
pin diode gamma detector
Abstract: Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes
Text: TABLE OF CONTENTS SURFACE MOUNT PRODUCTS PIN DIODES IN SMQ SQUARE SURFACE MOUNT DIVERSITY SWITCHES DC-2 GHz HIGH POWER (4 PACKAGES . 6
|
OCR Scan
|
OT-23
OT-23
OT-143
MA4T6365XX
pin diode gamma detector
Tuning Varactors
UHF schottky diode
GaAs p-i-n diodes
RF limiter PIN diode
impatt diode
IMPATT
10 GHz gunn diode
6 GHz PIN diode
Microwave zero bias detector diodes
|
PDF
|
Signal Path Designer
Abstract: PIN diode switch 3a "pin diode" DS025 DS0602
Text: SELECTING THE RIGHT RF SWITCH Ed Blair, Kalyan Farrington and Kelvin Tubbs Daico Industries, Inc. Rancho Dominguez, CA After the system design has been blocked out, after the individual component specifications to achieve the overall system’s performance have been identified, the crucial moment arrives.actual components selection! Amplifiers, filters, mixers and
|
OCR Scan
|
DS0352
DS0602
DS0842
DS0252
DS0052
DS0602
100C1003
DS0800
DS0842
Signal Path Designer
PIN diode switch
3a "pin diode"
DS025
|
PDF
|
