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    MICROSEMI D/C BREAKDOWN Search Results

    MICROSEMI D/C BREAKDOWN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HA3905- Coilcraft Inc Transformer, for Microsemi UC3844, SMT, RoHS Visit Coilcraft Inc
    DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB. Visit Amphenol Communications Solutions
    DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DC8W8P500H30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DEV2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Female Screw Lock UNC 4.40, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions

    MICROSEMI D/C BREAKDOWN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Calculator Keypad and LCD

    Abstract: CALVERT ELECTRONICS FDV303N engineered diffusers light dependent resistor simple LED work in 9v LX1991 LX1992 LX1993 AN23
    Text: AN 23 LED DRIVER APPLICATIONS FOR PORTABLE PRODUCTS AN 23 LED DRIVER APPLICATIONS FOR PORTABLE PRODUCTS Application Engineer: Michael Calvert I N T E G R A T E D Copyright  2000 Rev. 1.0, 2002-12-30 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


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    PDF LX432 15KHz UPS5819 FDV303N Si2308) CMD333UW D333UW Calculator Keypad and LCD CALVERT ELECTRONICS FDV303N engineered diffusers light dependent resistor simple LED work in 9v LX1991 LX1992 LX1993 AN23

    boost converter application note

    Abstract: TDS3034B AN22 AN-22 LX1741 LX1742 TCP202 LX7142
    Text: LX1741/LX1742 BOOST CONVERTER APPLICATION NOTE LX1741 / LX1742 BOOST CONVERTER DESIGN HINT AN-22 Application Engineer: Michael Calvert I N T E G R A T E D Copyright  2002 Rev. 1.0, 2002-12-03 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


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    PDF LX1741/LX1742 LX1741 LX1742 AN-22 LX741 boost converter application note TDS3034B AN22 AN-22 TCP202 LX7142

    PTC10001

    Abstract: POWER TECHNOLOGY COMPONENTS
    Text: 6115950 MICROSEMI 0 2E C OR P/ PO WER E J P T C D T ' 3 3 - Z * f D E I hllSTSO D0DD4SS 3 I ~ . TECHNOLOGY ÒÒ4 5 2 " 1 10000 PTC 10001 ^"C Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 20 AMPERES 400 VOLTS FEATURES APPLICATIONS • High Voltage Rating - 400 Volts


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    PDF 50/ts 200/iH 200/iH PTC10001 POWER TECHNOLOGY COMPONENTS

    Untitled

    Abstract: No abstract text available
    Text: MICROSEMI CORP/POQIER 27E D • bllSìSG Q00G532 1 « P T C T - 33-/3 TSB71020 I*TC TECHNOLOGY Power Transistor Chip, NPN 10 A, 200 V, tf = 35ns ■ Planar Epitaxial ■ C ontact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils


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    PDF Q00G532 TSB71020

    Untitled

    Abstract: No abstract text available
    Text: MICROSEMI CORP/POWER 27E D • iallSTSQ D Q G D S M Q G ■ P T C y _ 3 3 _ / 3 TSB125100 TECHNOLOGY Power Transistor Chip, NPN 25 A, 1000 V, tf = 50 ns ■ Planar Epitaxial ■ Contact Metallization: ■ Chip Thickness: 22 mils Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag


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    PDF TSB125100 18x53 20x48

    Untitled

    Abstract: No abstract text available
    Text: • Microsemi m m Santa Ana, CA m 1N6817 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology (MSASC25W100K) Features <ide p a s d v M e d structure fa r v«ry low le akage currents mrd ring protection to r in c re ^ |e d reverse- energy c a p a b it y i


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    PDF 1N6817 MSASC25W100K) 1N6817) 1N6817R) MSC1034A

    MC714

    Abstract: MC-65A/R-DC24V-L
    Text: niCROSEMI CORP S T E tillSflbS D GGDSGn use Qt T M C5600MC5607 Microsemi Corp. SANTA ANA. CA s c o r r s D A L t. a /. For m ore information 714 979-8220 FEATURES • • • • • • • MICRO SIZE HIGH VOLTAGE SILICON RECTIFIERS METALLURGICALLY BONDED, HERMETICALLY SEALED


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    PDF 9Ww99ft MC5600-MC5607 MC5600-MC5603: MC5604-MC5607: MC5600-MC5607) I25VOLTAGE 100mA MC714 MC-65A/R-DC24V-L

    Untitled

    Abstract: No abstract text available
    Text: 6115950 MICROSEMI CORP/POWER 71C 00314 D *7" ’• j r j f '/ C j 7ll^|bllSTS0 0DD0314 ' E Series PTC 403, PTC 409 High Voltage NPN Transistors 3.5 Amperes • 400 Volts FEATURES • High Voltage Rating - 4 0 0 Volts • Industrial and Military Applications


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    PDF 0DD0314

    5609

    Abstract: 5609 transistor TSB25020
    Text: 4SE D m bllS'ISO OOOOSbD b4D « P T C 3^ MICROSEMI CORP/POUER - ^ TSB25020 Power Transistor Chip, NPN 50 A, 200 V, tf = 50ns • Planar Epitaxial ■ Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils ■ Applications:


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    PDF TSB25020 5609 5609 transistor TSB25020

    IC AL 6001

    Abstract: rjz ce 6002 transistor PTC6003
    Text: 6115950 MICROSEMI 02E CORP/POWER □5 00448 D D e | ^ 1 1 5 ^ 5 0 o p p c m ita 1 f PTC PTC PTC PTC TECH N O LO GY Power Technology Components 6000 6001 6002 6003 FAST-SWITCHING HIGH POWER DARLINGTON TRANSISTORS 15 AMPERES 500 VOLTS Ö -o * 0 384| JÔ50 -{2663! MAX“


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    PDF 6001I 6002PTC IC AL 6001 rjz ce 6002 transistor PTC6003

    skp30a

    Abstract: osi 5k SKP18A skp40a
    Text: 5K P5.0 thru 5KP110A Microsemi Corp. SANTA ANA. i A S C O J T S D U .k .A / Kìi moie inloiindtion c.iil 602 -941-6300 - FEATURES Designed for use on the output of switching power supplies, voltage tolerances are referenced to the power supply output voltage level.


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    PDF 5KP110A 1000/usec 5KP64 5KP64A SKP90 5KP90A SKP100 5KP100A 5KP110 skp30a osi 5k SKP18A skp40a

    QQG1703

    Abstract: No abstract text available
    Text: bllSñbS DGQ1703 Ifll • M S C 5SE D T-II-Z3 TS-7 MICROSEMI CORP MicrojsemiCorp. 9 rfieaoae experts SCOTTSDALE, AZ SANTA AHA, CA FormoreinfonnationcaU; '" s ’ - FEATURES TRANSIENT ABSORPTION •■' ZENER • PROTECTS T T L ECL. DTL, MOS, CMOS AND MSI INTEGRATED CIRCUITS OPERATING ON POWER


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    PDF QQG1703 T-//-23

    Untitled

    Abstract: No abstract text available
    Text: MICROSEMI CORP/POüJER B7E D • bllSTSD CICIQ053Q ñ ■ PTC T-^3~/3 TSA63065 J P T C TECHNOLOGY Power TVansistor Chip, NPN 30 A, 650 V, tf = 0.1 ps ■ Planar Epitaxial ■ Contact Metallization: Base and Emiller-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils


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    PDF CICIQ053Q TSA63065

    0211s

    Abstract: 1N4728 1N4764 DO-213AB MLL4728 MLL4730A MLL4731A MLL4764 HLL47
    Text: MICROSEni CORP STE D nsc b l l 5 ñ t i S D002114 4kT MLL4728 thru MLL4764 Microsemi Corp. 5 C O T T S / A i.L . A Z For more information, call: S A M 'A A S A , CA 6 0 2 ) <MMOOO D E S C R I P T I O N /F E A T U R E S • • • • LEADLESS GLASS ZENER


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    PDF D002114 MLL4728 MLL4764 1N4728 1N4764 DO-41 0211s DO-213AB MLL4728 MLL4730A MLL4731A MLL4764 HLL47

    ICT-10

    Abstract: ICT-10C ICT-12 ICT-15 ICT-18 ICT-22 ICT-36 ICT-45 ICT-45C
    Text: - ^ -V m cROSErii STE coRP D LllSflbS Microsemi Corp. 9 The Mode expels •V/l:V/4 -4A.-I, C-! scoi i^n u /■:. u 0002073 Gib ICT-5 thru ICT-45C For more information ca 602 941-6300 FEATURES • THIS S ER IES O F TflZ DEVICES IS DESIGNED TO PR O T EC T BIPO LAR , MOS AND S C H O TTK Y


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    PDF L115at ICT-45C 1000ms ICT-10 ICT-10C ICT-12 ICT-15 ICT-18 ICT-22 ICT-36 ICT-45 ICT-45C

    MC458A

    Abstract: MC486B MC456A MC457A MC459A MC461A kovar 250 mw ultra stable diode
    Text: M C 4 5 6 A - M C 486 B Microsemi Corp. ' The diode experts SANTA ANA, CA SCOTTSDALE, AZ F o r m ore in fo rm a tio n call. 714 979-8220 PELLET DIODES FE A T U R E S • • • • M icrom iniature package. Standard recovery. Stable surface films integrally bonded to the d e vice crystal.


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    PDF MC456A MC486B MIL-S-19500. MC457A MC458A -125V MC459A -175V MC461A kovar 250 mw ultra stable diode

    Untitled

    Abstract: No abstract text available
    Text: M I C R O SE MI CORP STE D • bllSfitS Ësmsmm§Ëmmmmasmamsmsaiimmm: Microsemi Corp. S iM .\ 1 \.-l, A □o g i ^ m 2T3 ■ nsc 1N 3643 thru 1N 3647 1N5181 thru 1N5184 S I ( / rsi>. i 1.1. I /. For more information call: (714) 979-8220 / FEATURES • MICROMINIATURE PACKAGE


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    PDF 1N5181 1N5184 100mA 10-30/1N3643-47 40-100/1N5181

    curve tracer

    Abstract: 5609 5609 transistor TSA65520
    Text: 4SE D • b l l S S S O O O O O S S M 347 « P T C MICROSEMI CORP/POUER TSA65520 Power Transistor Chip, NPN 55 A, 200 V, tf= 0.1 fis ■ Planar Epitaxial ■ Contact Metallization: Base and Cmitier-Aiummum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils


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    PDF TSA65520 Mx66naU 38x31 curve tracer 5609 5609 transistor TSA65520

    Untitled

    Abstract: No abstract text available
    Text: Microsemi Corp. ,/ SANTA ANA, CA s ' The dioae expert SCOTTSDALE, AZ M L L 5 22 1 thru M LL5281 For more information call: 602 941-6300 D E S C R IP T IO N /F E A T U R E S • LEAOLESS PACKAGE FOR SURFACE MOUNT TECHNOLOGY • IDEAL FOR HIGH DENSITY MOUNTING


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    PDF LL5281 1N5221 1N528wn LL522IA, MLL5242A, MLK5243A. LL528IA,

    transient absorption zener

    Abstract: SOV12 SOV15 SOV18 SOV24 SOV28
    Text: MICROSEriI STE D CORP biisab 5 X DOOEm? x SST i ns c S0V5.0 thru SOV28 Microsemi Corp. i Thfc d'ode e SASTAANA. 4 SCOTTSDALE, A7. H tr in o re in in rm u lm n call' (602 9 4 I-M Q 0 FEATURES • VOLTAGES FROM 5.0 TO 28V STANO-OFF (VWM) • LOW CLAMPING RATIO


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    PDF SOV28 SOV18 SOV24 SOV28 transient absorption zener SOV12 SOV15

    in6303a

    Abstract: in6267 diode in6303a CD6283 A2 5170 CD5908 CD6267 CD6303A in6303
    Text: Microsemi Corp. s a k ta a n a , ca s c o tts d a le , a z S2^i“ APPLICATION This TAZ* series has a peak pulse power rating o f 1500 watts for one millisecond. It can protect integrated circuits, hybrids, CMOS, MOS and other voltage sensitive components that are used in a broad range


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    PDF 5KCD200A, CD5908 CD6267 CD6303A in6303a in6267 diode in6303a CD6283 A2 5170 CD6303A in6303

    Untitled

    Abstract: No abstract text available
    Text: niCROSEni coRP 5TE D • bllSfibS D0050ti3 17? ■ Microsemi Corp. 5 r-r -.occ c o i v i si o i i m '-u i:, SANTA A S A . CA i/ For mon; intormaiinn call 602 941-630Û FEA TU RES These TAZ devices are high power; medium voltage Transient Suppressors designed for protecting precision industrial electronic equipment. They are


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    PDF D0050ti3 1000//sec Repetiti299 15KP240 15KP240A 1SKP260A 15KP280 15KP280A

    marking 59E

    Abstract: MC458A MC456A MC457A MC459A MC486B
    Text: niCRosEm coRP ste d • / b i is at s 0 0 0 2 0 1 0 i E 3 ■ rise M C 456A - M C 486B Microsemi Corp. Y The tîtoée e x p e rh j SA M A A .VX, CA F or m ore inform ation call: SC O TTSD A LE. A Z / 714 979-8220 / MICRO-DIODES FEATURES • • • • Microminiature package.


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    PDF MC456A MC486B L-S-19500. MC463A -175V MC464A -125V MC482B MC483B MC484B marking 59E MC458A MC457A MC459A MC486B

    IN6370

    Abstract: IN6360 1N6356 1N6372 MPT-10 MPT-12 MPT-45C
    Text: P l ICRO SE f ll S 'iE CORP D T i i s a b s 0 0 0 2 0 4 ? T2M • nsc I Microsemi Corp. ¡ ,O0Cc f The I ■S.-U/.1 .1 v-l. C 1 w im SCOTISPAU. 1/ ■or more information call: (602) 941-6300 FEATURES • DESIGNED TO PROTECT BIPOLAR AND MOS MICROPROCESSOR BASED SYSTEM S.


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    PDF 00Q2047 IN6370 IN6360 1N6356 1N6372 MPT-10 MPT-12 MPT-45C