MICRON POWER RESISTOR Search Results

MICRON POWER RESISTOR Result Highlights (5)

Part	Manufacturer	Description
TPD4164F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31
TPD4164K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30
TPD4163K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30
TPD4163F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31
TPD4207F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)

MICRON POWER RESISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CMOS Process Family Abstract: XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor XP018 process flow diagram "X-Fab" Core cell library Text: 0.18 µm CMOS Process Family XP018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron CMOS Power Management Process Technology Description The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS Power Management Technology. Based upon the industrial standard single	Original	PDF	XP018 XP018 18-micron CMOS Process Family XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor process flow diagram "X-Fab" Core cell library
02011-BRF-001-A Abstract: M02011 TIA AGC application note Text: 622Mbps Transimpedance Amplifier with AGC M02011 Low-power, high-sensitivity, 622Mbps transimpedance amplifier fabricated in sub-micron CMOS The M02011 transimpedance amplifier TIA with automatic gain control (AGC) is fabricated in sub-micron CMOS for	Original	PDF	622Mbps M02011 M02011 02011-BRF-001-A 02011-BRF-001-A TIA AGC application note
02015-BRF-001-A Abstract: MINDSPEED M02015 M02015 ONU block diagram cmos agc GPON block diagram TIA AGC application note automatic gain control agc Text: 2.5 Gbps Transimpedance Amplifier with AGC M02015 Low-power, high-sensitivity 2.5 Gbps transimped ance amplifier fabricated in sub-micron CMOS The M02015 transimpedance amplifier TIA with automatic gain control (AGC) is fabricated in sub-micron CMOS for high	Original	PDF	M02015 M02015 280na, 280na Overlo000 02015-BRF-001-A 02015-BRF-001-A MINDSPEED M02015 ONU block diagram cmos agc GPON block diagram TIA AGC application note automatic gain control agc
02014-BRF-001-A Abstract: M02014 GPON block diagram TIA AGC application note avalanche photodiode ingaas ghz Avalanche cmos photodetector Text: 2.5 Gbps Transimpedance Amplifier with AGC M02014 Low-power, high-sensitivity 2.5 Gbps transimped ance amplifier fabricated in sub-micron CMOS The M02014 transimpedance amplifier TIA with automatic gain control (AGC) is fabricated in sub-micron CMOS for high	Original	PDF	M02014 M02014 253na, 253na Overl000 02014-BRF-001-A 02014-BRF-001-A GPON block diagram TIA AGC application note avalanche photodiode ingaas ghz Avalanche cmos photodetector
0.18-um CMOS technology characteristics Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology Text: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM	Original	PDF	5136B-05/06/1K 0.18-um CMOS technology characteristics atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
TF-680 Abstract: L302 FV09 macros in embedded computing Text: DATA SHEET QB-8 / QB-8E 3.3 Volt , 0.44-Micron Gate-Array Description NEC’s 3.3V QB-8 family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring high speeds and low power dissipation. The QB-8 family offers not	Original	PDF	44-Micron TF-680 L302 FV09 macros in embedded computing
nmos transistor 0.35 um Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials Text: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power	Original	PDF	XHB06 XHB06 nmos transistor 0.35 um npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials
MwT-273 Abstract: mwt 871 MwT-270 sii 021 s-parameter MWT273HP Text: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL7GOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally	OCR Scan	PDF	QQQ0S51 MwT-273 mwt 871 MwT-270 sii 021 s-parameter MWT273HP
F4029 Abstract: No abstract text available Text: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally	OCR Scan	PDF	651-67Q0 F4029
mwt-970 Abstract: 16662 ic 74390 61787 Text: MwT-9 M ic r o w ave 18 GHz High Power GaAs FET T echno lo g y ri iiiniiiMiiii! +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES - • _ I	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: MwT-12 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAL7GOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION DESCRIPTION	OCR Scan	PDF	MwT-12 MwT-12 at280
TGS 822 Abstract: No abstract text available Text: MwT-16 M ic r o w a v e • • • • • • 26 GHz High Power GaAs FET techno lo g y 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION	OCR Scan	PDF	MwT-16 MwT-16 TGS 822
Untitled Abstract: No abstract text available Text: MwT-12 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAL/GOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION DESCRIPTION	OCR Scan	PDF	MwT-12 MwT-12 ivT-12.
RF MESFET S parameters Abstract: No abstract text available Text: MwT-A8 ÛÊVt M ic r o w a v e 16 GHz High Power GaAs FET techno lo g y H 0.6 WATT POWER OUTPUT AT 12 GHz +40 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 1200 MICRON GATE WIDTH DIAMOND-UKE CARBON PASSIVATION CHOICE OF CHIP AND ONE	OCR Scan	PDF

MWT-871HP Abstract: MWT871HP 557 b Text: MwT-8 16 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y n • • • • 0.6 WATT POWER OUTPUT AT 12 GHz +40 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAL/GOLD GATE • 1200 MICRON GATE WIDTH • DIAMOND-LIKE CARBON PASSIVATION	OCR Scan	PDF
transistor WT6 Abstract: transistor WT6 45 transistor WT6 Equivalent WT6 transistor 651-220K pin configuration of ic 1496 Text: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y if 50f\| • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH CHOICE OF CHIP AND ONE	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: $ k \ rs m M ic r o w a v e T e c h n o l o g y • • • • • MwT-H16 32 GHz High Power AIGaAs/lnGaAs PHEMT 28 dBm POWER OUTPUT AT 12 GHz 11 dB GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION	OCR Scan	PDF	MwT-H16
transistor MWTA 06 Abstract: No abstract text available Text: MwT-11 M ic r o w a v e 14 GHz High Power GaAs FET tec h no lo g y l«-75 -\| i«-75 -\| 4> e » W7mi F • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE • 2400 MICRON GATE WIDTH • DIAMOND-LIKE CARBON PASSIVATION	OCR Scan	PDF	wT-11 in11m MwT-11 transistor MWTA 06
IC tt 3034 Abstract: MWT7HP MWT-7 MwT-770 mwt 773 MWT-770HP Text: MwT-7 26 GHz Medium Power GaAs FET M ic r o w a v e T e c h n o l o g y n +20 dBm OUTPUT POWER AT 12 GHz EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR APPUCATIONS • 0.3 MICRON REFRACTORY METALJGOLD GATE • 250 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO PACKAGE TYPES	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: MwT-12 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • 0.5 WATT POWER OUTPUT AT 12 GHz • +39 dBm THIRD ORDER INTERCEPT • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 900 MICRON GATE WIDTH • DIAMOND-UKE CARBON PASSIVATION	OCR Scan	PDF	MwT-12 MwT-12
Untitled Abstract: No abstract text available Text: MwT-15 M ic r o w a v e T 26 GHz High Power GaAs FET echnology -»j 50 p • • • • +24 dBm OUTPUT POWER AT 12 GHz 9.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH ÏF j* \| ^ 0 M » » j P _ 75 241 _ 72	OCR Scan	PDF	MwT-15 MwT-15
transistor MWTA 06 Abstract: mwta 06 Text: MwT-A11 14 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • • • • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 2400 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION CHOICE OF CHIP AND ONE	OCR Scan	PDF	MwT-A11 MwT-A11 syste80 000Gb23 transistor MWTA 06 mwta 06
Untitled Abstract: No abstract text available Text: MwT-3 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y rr • • • • • +21 DBM OUTPUT POWER AT 12 GHZ 11 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL/GOLD GATE 300 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: M w T -1 6 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y rr • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 900 MICRON GATE WIDTH DIAMOND-UKE CARBON PASSIVATION	OCR Scan	PDF	MwT-16

MICRON POWER RESISTOR Search Results

MICRON POWER RESISTOR Result Highlights (5)

MICRON POWER RESISTOR Datasheets Context Search

CMOS Process Family

02011-BRF-001-A

02015-BRF-001-A

02014-BRF-001-A

0.18-um CMOS technology characteristics

TF-680

nmos transistor 0.35 um

MwT-273

F4029

mwt-970

Untitled

TGS 822

Untitled

RF MESFET S parameters

MWT-871HP

transistor WT6

Untitled

transistor MWTA 06

IC tt 3034

Untitled

Untitled

transistor MWTA 06

Untitled

Untitled