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    MICRON PART MARKING DECODER Search Results

    MICRON PART MARKING DECODER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    54LS155A/BEA-ROCV Rochester Electronics 54LS155 - Decoder, Dual 2-To-4-Line - Dual marked (M38510/32601BEA) Visit Rochester Electronics Buy
    MM54HC154JS/883 Rochester Electronics LLC 54HC154 - Decoder, 4-To-16-Line - Dual marked (5962-8682201LA) Visit Rochester Electronics LLC Buy
    54AC138/QFA Rochester Electronics LLC 54AC138 - Decoder/Demultiplexer Single 3 to 8 - Dual marked (5962-8762201FA) Visit Rochester Electronics LLC Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy

    MICRON PART MARKING DECODER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT47H32M16

    Abstract: micron marking MT47H FBGA 320 DDR2 16 meg x16 micron FBGA SDRAM marking micron ddr2 FBGA 84 32M16 Micron 32M16
    Text: Micron Confidential and Proprietary 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks For functional and parametric specifications, refer to the product data sheet on Micron’s Web site: www.micron.com


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    PDF 512Mb: MT47H128M4 MT47H64M8 MT47H32M16 84-ball 60-ball DDR2-400) DDR2-533) DDR2-667) 09005aef81ce6bd7, MT47H32M16 micron marking MT47H FBGA 320 DDR2 16 meg x16 micron FBGA SDRAM marking micron ddr2 FBGA 84 32M16 Micron 32M16

    Mobile DDR SDRAM

    Abstract: No abstract text available
    Text: Preliminary‡ 512Mb: x16, x32 Mobile DDR SDRAM AT Addendum Features Mobile DDR SDRAM AT Addendum MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS


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    PDF 512Mb: MT46H32M16LF MT46H16M32LF 09005aef8331e890/Source: 09005aef8331e867 Mobile DDR SDRAM

    64M16

    Abstract: MT46H32M32Lf MT46H64M16LF 1GB-x16 uA78
    Text: 1Gb: x16, x32 Mobile DDR SDRAM AT Addendum Features Mobile DDR SDRAM Addendum MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)


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    PDF MT46H64M16LF MT46H32M32LF 09005aef82c1aa70/Source: 09005aef82c1a99b 64M16 MT46H32M32Lf MT46H64M16LF 1GB-x16 uA78

    micron lpddr

    Abstract: 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged
    Text: 128Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum Features Mobile LPDDR SDRAM AT Addendum MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS


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    PDF 128Mb: MT46H8M16LF MT46H4M32LF 09005aef835b8f7c 09005aef835b8e70 micron lpddr 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum Features Mobile LPDDR SDRAM AT Addendum MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF – 2 Meg x 32 x 4 banks Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS


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    PDF 256Mb: MT46H16M16LF MT46H8M32LF 09005aef837e9423 09005aef837e93d7

    D9KG

    Abstract: marking code micron label marking aa5 152-Ball M2P20 MT46H64M32L2CG-6 152-Ball PoP SMD marking code B10 AA5 mark diagram smd marking code M21
    Text: Preliminary‡ 152-Ball x32 LPDDR-SDRAM PoP TI-OMAP Features LPDDR-SDRAM 152-Ball Package-on-a-Package (PoP) TI-OMAP MT46HxxxMxxLxCG Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)


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    PDF 152-Ball MT46HxxxMxxLxCG 09005aef833913f1/Source: 09005aef833913d6 D9KG marking code micron label marking aa5 M2P20 MT46H64M32L2CG-6 152-Ball PoP SMD marking code B10 AA5 mark diagram smd marking code M21

    micron fbga code

    Abstract: MT47H128M8
    Text: 1Gb: x4, x8, x16 DDR2 SDRAM Addendum Features DDR2 SDRAM Data Sheet Addendum MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • •


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    PDF MT47H256M4 MT47H128M8 MT47H64M16 84-ball 60-ball 09005aef8573b635 micron fbga code MT47H128M8

    CSN-11

    Abstract: MT46H64M32L2KQ 168B micron lpddr lpddr smd code marking CK BA121 Marking Code TI OMAP micron marking code information marking code micron label
    Text: Preliminary‡ 168-Ball x32 Mobile LPDDR PoP TI OMAP Addendum Features Mobile LPDDR Addendum 168-Ball Package-on-Package (PoP) WFBGA TI OMAP MT46HxxxMxxL2KQ Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS)


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    PDF 168-Ball MT46HxxxMxxL2KQ 09005aef83a3b4e1/Source: 09005aef83a3b4cb CSN-11 MT46H64M32L2KQ 168B micron lpddr lpddr smd code marking CK BA121 Marking Code TI OMAP micron marking code information marking code micron label

    MT29F1G08ABCHC

    Abstract: mt29c MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr
    Text: Preliminary‡ 152-Ball NAND Flash and Mobile LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 152-Ball Package-on-Package (PoP) Combination Memory (TI OMAP ) MT29C Family Current production part numbers: See Table 1 on page 3 Features Figure 1:


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    PDF 152-Ball MT29C 152-Ball 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29F1G08ABCHC MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr

    MT46H64M32

    Abstract: MT46H128 MT46H64M32L2CG-6 MT46H128M 152-Ball lpddr MT46H128M32 micron lpddr 128M32 MT46H128M32L4KZ
    Text: 152-Ball x32 Mobile LPDDR only PoP (TI-OMAP) Features Mobile LPDDR (only) 152-Ball Package-on-Package (PoP) TI-OMAP MT46HxxxMxxLxCG MT46HxxxMxxLxKZ Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)


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    PDF 152-Ball MT46HxxxMxxLxCG MT46HxxxMxxLxKZ 09005aef833913f1/Source: 09005aef833913d6 MT46H64M32 MT46H128 MT46H64M32L2CG-6 MT46H128M lpddr MT46H128M32 micron lpddr 128M32 MT46H128M32L4KZ

    MT29C1G12

    Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1
    Text: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


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    PDF 152-Ball 409ng 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29C1G12 mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1

    MT29F2G16AB

    Abstract: MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


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    PDF 168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29F2G16AB MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET

    MT29C2G24m

    Abstract: MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD
    Text: Preliminary‡ 168-Ball NAND Flash and LP-DRAM PoP TI-OMAP MCP Features NAND Flash and LP-DRAM 168-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


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    PDF 168-Ball 09005aef83071038/PDF: 09005aef83070ff3 168ball MT29C2G24m MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD

    MT29C2G24MAKLAJG-75 IT

    Abstract: MT29C2G24MAKLAjg JW256
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


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    PDF 168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29C2G24MAKLAJG-75 IT MT29C2G24MAKLAjg JW256

    MICRON BGA PART MARKING

    Abstract: MT44K32M36 MT44K32M36RCT
    Text: 1Gb: x18, x36 TwinDie RLDRAM 3 - Bittware Addendum Features TwinDie RLDRAM 3 - Addendum MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRC MIN = 10ns


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    PDF MT44K64M18 MT44K32M36 168-ball RL3-1600) 576Mb 09005aef8547d835 MICRON BGA PART MARKING MT44K32M36 MT44K32M36RCT

    MT46H64M32

    Abstract: marking k22 SMD pop 168 U22-T23 marking code micron label micron lpddr SMD marking code B10 SMD CODE aa23 AB22-AB23 AC18-AC19
    Text: Preliminary‡ 168-Ball x16, x32 LPDDR-SDRAM PoP TI OMAP Features LPDDR-SDRAM 168-Ball Package-on-a-Package (PoP) TI OMAP MT46HxxxMxxLxJG Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)


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    PDF 168-Ball MT46HxxxMxxLxJG 09005aef833508fb/Source: 09005aef83350d72 MT46H64M32 marking k22 SMD pop 168 U22-T23 marking code micron label micron lpddr SMD marking code B10 SMD CODE aa23 AB22-AB23 AC18-AC19

    marking code micron label

    Abstract: No abstract text available
    Text: ADVANCE‡ 64Mb MULTIBANK ASYNC/PAGE FLASH 16Mb ASYNC CellularRAM MEMORY FLASH AND CellularRAM COMBO MEMORY MT28C64416W18AFY Low Voltage, Wireless Temperature Features Figure 1: 68-Ball FBGA Stacked die Combo package • Includes one 64Mb Flash device • Includes one 16Mb CellularRAM device


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    PDF 09005aef80f935e6 MT28C64416W18AFY marking code micron label

    MT41K512M16

    Abstract: 96 ball fbga thermal resistance micron MT41K256M16 DDR3L 63 ball fbga thermal resistance micron micron marking code information marking micron MT41K256M16 DDR3 impedance 1m x16 SDRAM MICRON
    Text: 8Gb: x16 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x 2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm)


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    PDF MT41K512M16 MT41K256M16 MT41K512M16. 96-ballw 09005aef84ccb467 MT41K512M16 96 ball fbga thermal resistance micron MT41K256M16 DDR3L 63 ball fbga thermal resistance micron micron marking code information marking micron MT41K256M16 DDR3 impedance 1m x16 SDRAM MICRON

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 64Mb MULTIBANK ASYNC/PAGE FLASH 16Mb ASYNC CellularRAM MEMORY FLASH AND CellularRAM COMBO MEMORY MT28C64416W18AFY Low Voltage, Wireless Temperature Features Figure 1: 68-Ball FBGA Stacked die Combo package • Includes one 64Mb Flash device • Includes one 16Mb CellularRAM device


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    PDF MT28C64416W18AFY 68-Ball 09005aef80f935e6 MT28C64416W18AFY

    MT41K512M16

    Abstract: MT41K256M16 96 ball fbga thermal resistance micron Theta JC of FBGA MICRON fBGA package code micron marking code information
    Text: Preliminary‡ 8Gb: x16 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x 2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm)


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    PDF MT41K512M16 MT41K256M16 MT41K512M16. SAC305 09005aef84ccb467 MT41K512M16 MT41K256M16 96 ball fbga thermal resistance micron Theta JC of FBGA MICRON fBGA package code micron marking code information

    smd marking K23

    Abstract: lpddr SMD transistor MARKING CODE g23 marking k22 SMD 168-ball LPDDR sac105 LPDDR Pop smd transistor ab2 MT46H64M32 SMD transistor k23
    Text: Preliminary‡ 168-Ball x16, x32 Mobile LPDDR PoP TI OMAP Mobile DDR SDRAM Addendum Mobile LPDDR 168-Ball Package-on-Package (PoP) TI OMAP MT46HxxxMxxLxJG Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS)


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    PDF 168-Ball MT46HxxxMxxLxJG 09005aef833508fb/Source: 09005aef83350d72 smd marking K23 lpddr SMD transistor MARKING CODE g23 marking k22 SMD 168-ball LPDDR sac105 LPDDR Pop smd transistor ab2 MT46H64M32 SMD transistor k23

    MT41K256M16

    Abstract: No abstract text available
    Text: 8Gb: x16 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x 2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm)


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    PDF MT41K512M16 96-ball 071ns DDR3L-1866) DDR3L-1600) DDR3L-1333) DDR3L-1066) 09005aef84ccb467 MT41K256M16

    Micron flash

    Abstract: marking code micron label marking W18
    Text: PRELIMINARY‡ 64Mb MULTIBANK BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C64416W18/W30A PREVIEW‡‡ MT28C64432W18/W30A MT28C64464W18/W30A Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA


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    PDF 16Mb/32Mb/64Mb 09005aef80bcd58d MT28C64432W18A Micron flash marking code micron label marking W18

    MT41K256M16

    Abstract: MT41K512M16 8Gb DDR3 SDRAM twindie ddr3 udqs DDR3 timing diagram
    Text: Preliminary‡ 8Gb: x16 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm) Rev. E


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    PDF MT41K512M16 MT41K256M16 MT41K512M16. SAC305 09005aef84ccb467 MT41K256M16 MT41K512M16 8Gb DDR3 SDRAM twindie ddr3 udqs DDR3 timing diagram