MT29F128G08AJAAAWP-IT
Abstract: MT29F128G08AJAAAWP MT29F32G08ABCABH1-10IT MT29F32G08ABCABH1 MT29F32G08AB MT29F128G08AJAAA M73A 256gb nand flash mt29f128g08 MT29F128G08A
Text: MT29F32G08ABCABH1-10IT - Micron Technology, Inc. Page 1 Micron Global Investor Relations News & Events Jobs Contact Micron Login PRODUCTS & SUPPORT ABOUT MICRON How To Buy Sign up for Access Enter Search Term or Part Number MY WORKSPACE MT29F32G08ABCABH1-10IT
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MT29F32G08ABCABH1-10IT
MT29F32G08ABCABH1-10IT
100-ball
32/64/128/256Gb
Down09/2010
flash/mass-storage/mt29f32g08abcabh1-10it
MT29F128G08AJAAAWP-IT
MT29F128G08AJAAAWP
MT29F32G08ABCABH1
MT29F32G08AB
MT29F128G08AJAAA
M73A
256gb nand flash
mt29f128g08
MT29F128G08A
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MT29F32G08AFACA
Abstract: MT29F32G08 MT29F32G0
Text: Specifications Data Sheets B~s/Cell: SLC Brand: Micron Bus Wi<hh: x8 Chill Em1ble: Single Component Density: 32Gb Depth: 2Gb Fall: Micron Family: NAND Flash Generation l>rimaly : First Generation 110 : Common 110 Channels: 1 lnte1face: Async Manufacturer: Micron
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48-pin
MT29F32G08AFACAVVP
MT29F32G08AFACAVI/PES
MT29F32G08AFACA
MT29F32G08
MT29F32G0
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MT29F32G08AFACAWP-IT
Abstract: MT29F32G08AFACAWP-ITES MT29F32G08AFA MT29F32G08 MT29F32G08AFACAWP
Text: Specifications Data Sheets B~s/Cell: SLC Brand: Micron Bus Wi<hh: x8 Chill Em1ble: Single Component Density: 32Gb Depth: 2Gb Fall: Micron Family: NAND Flash Generation l>rimaly : First Generation 110 : Common 110 Channels: 1 lnte1face: Async Manufacturer: Micron
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48-pin
MT29F32G08AFACAWP-ItC
MT29F32G08AFACAWP-ITES
MT29F32G08AFACAWP-IT
MT29F32G08AFA
MT29F32G08
MT29F32G08AFACAWP
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MT29F128G08AJAAAWP-ITES
Abstract: MT29F128G08AJAAAWP-IT MT29F128G08AJAAAWP-I MT29F128G08AJAAA MT29F128G08AJAAAWP MT29F128 mt29f128g08 MT29F128G
Text: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa Chill Em1ble: Single Component Density: 128Gb Depth: 16Gb Fall: Micron Family: NAND Flash 110 : Common Mmmfacturer: Micron Mode Operation: Single Die
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128Gb
48-pin
Exterm11:
3216411281256Gb
MT29F128G08AJAAAWP-I
MT29F128G08AJAAAWP-ITES
MT29F128G08AJAAAWP-IT
MT29F128G08AJAAA
MT29F128G08AJAAAWP
MT29F128
mt29f128g08
MT29F128G
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Micron Technology
Abstract: No abstract text available
Text: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and
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20Note/DRAM/TN4102
TN-41-04:
TN-41-13:
TN-46-02:
TN-46-06:
TN-46-11:
TN-46-14:
TN-47-19:
TN-47-20:
Micron Technology
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dram structure
Abstract: 2240 6T SRAM micron sram
Text: Joint News Release by Infineon and Micron Infineon Technologies and Micron Technology Announce Cooperation to Develop ‘CellularRAM’ Munich, Germany/Boise, Idaho, USA, June 24, 2002 - Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced they
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INFMP200206
dram structure
2240
6T SRAM
micron sram
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Micron NAND
Abstract: design manual atmel atl ATL25 ATL35
Text: Below are the ATL25 0.25 micron , ALT35 (0.35 micron) and ATL60/ATLS60 (0.6 micron) design manual sections, followed by five sections which are common to all Atmel design manuals (Design, Test, Packaging, Q&R, and Military & Aerospace). ASIC Checklists Kickoff Meeting Checklist - V 3.2
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ATL25
ALT35
ATL60/ATLS60
ATL25
Micron NAND
design manual
atmel atl
ATL35
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fan 7320
Abstract: atmel 936 ttl buffer MG2014P MG2044P MG2142P MG2270P TM1019 radiation hard PLL OAI22 capacitance
Text: MG2RTP Radiation Hardened 0.5 Micron Sea of Gates Introduction The MG2RTP series is a 0.5 micron, array based, CMOS product family. Several arrays up to 490k cells cover all system integration needs. The MG2RTP is manufactured using SCMOS3/2RTP, a 0.5 micron drawn, 3 metal
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OAI22
fan 7320
atmel 936
ttl buffer
MG2014P
MG2044P
MG2142P
MG2270P
TM1019
radiation hard PLL
OAI22 capacitance
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14020
Abstract: MG2000 MG2001 MG2002 MG2004 MG2010 MG2044 MG2055
Text: MG2 0.5 Micron Sea of Gates Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS process.
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BOUT12
14020
MG2000
MG2001
MG2002
MG2004
MG2010
MG2044
MG2055
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32M DPRAM
Abstract: MG2044E MG2091E MG2140E MG2194E MG2265E MG2360E MG2480E MG2700E TM1019
Text: MG2RT Radiation Tolerant 0.5 Micron Sea of Gates Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured using SCMOS3/2RT, a 0.5 micron drawn, 3 metal layers
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Tree65
32M DPRAM
MG2044E
MG2091E
MG2140E
MG2194E
MG2265E
MG2360E
MG2480E
MG2700E
TM1019
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36168
Abstract: No abstract text available
Text: MG2 MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS
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Bout12,
BOUT12
36168
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MG2000
Abstract: MG2001 MG2002 MG2004 MG2010 MG2044 MG2055 MATRA MHS, MG2
Text: MG2 MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS 3/2, a 0.5 micron drawn, 3 metal layers
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BOUT12
MG2000
MG2001
MG2002
MG2004
MG2010
MG2044
MG2055
MATRA MHS, MG2
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MT29F2G01
Abstract: SPI NAND FLASH 2GB Nand M69A
Text: Specifications Data Sheets B~s/Cell: ~ Datasheet: NAND SPI 2Gb Data Sheet M69A ~ SLC Brand: Micron Bus Wi<hh: x1 Chill Em1ble: Single Component Density: 2Gb Depth: 2Gb Fall: Micron Family: NAND Flash Flash Vohage: 3.3V Generation primaly : First Generation
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63-ball
MT29F2G01
SPI NAND FLASH
2GB Nand M69A
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MT29F32G08ABAAA
Abstract: MT29F32G08ABAAAWP MT29F32G08ABAAAWP-I mt29f32g08aba MT29F32G08 MT29F32G08A MT29F32G MT29F32G08ab
Text: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa Chill Em1ble: Single Component Density: 32Gb Depth: 4Gb Fall: Micron Family: NAND Flash Flash Vohage: 1.8V Generation (primary : First
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3216411281256Gb
MT29F32G08ABAAAWP-I
MT29F32G08ABAAA
MT29F32G08ABAAAWP
mt29f32g08aba
MT29F32G08
MT29F32G08A
MT29F32G
MT29F32G08ab
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MT29F16G08ABACAWP-IT
Abstract: MT29F16G08ABACA MT29F16G08Abacawp MT29F16G08ABA MT29F16G08ABAC
Text: Specifications Data Sheets B~s/Cell: SLC Brand: Micron Bus Wi<hh: x8 Chill Em1ble: Single Component Density: 16Gb Depth: 2Gb Fall: Micron Family: NAND Flash Flash Vohage: 1.8V Generation primary : First Generation 110 : Common 110 Channels: 1 Interface: Async
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Exterm11:
MT29F16G08ABACAWP-ItC
MT29F16G08ABACAWP-ITES
MT29F16G08ABACAWP-IT
MT29F16G08ABACA
MT29F16G08Abacawp
MT29F16G08ABA
MT29F16G08ABAC
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MT29F64G08
Abstract: MT29F64G08AECABH1 MT29F64G08AE
Text: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa CE Chill Count: 2 Chill Enable: Single Component Density: 64Gb Fall: Micron Family: NAND Flash Generation (l>rimaly : Third Generation
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3216411281256Gb
100-ball
MT29F64G08
MT29F64G08AECABH1
MT29F64G08AE
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mt29f128g08
Abstract: MT29F128 MT29F128G08a MT29F128G08AM
Text: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa CE Chill Count: 4 Chill Enable: Single Component Density: 128Gb Depth: 16Gb Fall: Micron Family: NAND Flash Generation (l>rimaly : First
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52-pad
Exterm11:
3216411281256Gb
mt29f128g08
MT29F128
MT29F128G08a
MT29F128G08AM
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Untitled
Abstract: No abstract text available
Text: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa CE Chill Count: 4 Chill Enable: Single Component Density: 128Gb Depth: 16Gb Fall: Micron Family: NAND Flash Generation (l>rimaly : First
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52-pad
Exterm11:
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PC5004
Abstract: VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding
Text: V L S I T ech n o lo gy, inc. O.6-MICRON _ ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.6-micron 0.55-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec - 5 V (4.5 to 5.5 V): 190 ps, 2.6 nW/MHz
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55-micron
PC5004
VGC650
VGC6P52
VGC600
IN01D1
NR02D1
QFP 128 bonding
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nd02d2
Abstract: No abstract text available
Text: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design
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OCR Scan
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PDF
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VGC450/VGC453
VGC450/453
nd02d2
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2 bit magnitude comparator
Abstract: NCR asic NCR Microelectronics Division 1-Bit full adder 30076 7217 up down counter The Western Design Center AOI22 using NAND gate construct an inverter ncr 400
Text: A S I C APPLICATION SPECIFIC INTEGRATED CIRCUITS "i NCR 62A00 2-Micron Gate Array Products fM H ffik • 2-micron drawn, 1.5-micron effective, DLM process • 600 to 8,500 equivalent gate complexity with up to 95% utilization • Commercial, industrial, automotive and
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OCR Scan
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PDF
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62A00
2 bit magnitude comparator
NCR asic
NCR Microelectronics Division
1-Bit full adder
30076
7217 up down counter
The Western Design Center
AOI22
using NAND gate construct an inverter
ncr 400
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toshiba tc110g
Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective
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OCR Scan
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PT6042
Abstract: VGC453 model values for 0.18 micron technology cmos nd02d2
Text: V L S I TECHNOLOGY INC T3aa3M? oooaaio □ M7E D V L S I T echn o lo gy , in c . VTI ' PRELIMINARY -0 9 VGC450/VGC453 LIBRARY O.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS
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OCR Scan
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PDF
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VGC450/VGC453
VGC453
VGC450
PT6042
model values for 0.18 micron technology cmos
nd02d2
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integrated circuit TL 2262
Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470
Text: V L S I TECHNOLOGY INC M7E D VTI V L S I T ech n o lo g y , in c . T - m PRELIMINARY - m VSC470 SERIES 0.8-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon gate CMOS technology
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OCR Scan
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PDF
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VSC470
integrated circuit TL 2262
PT6042
180 nm CMOS standard cell library Synopsys
compass ic
ND02D2
0.03 um CMOS technology
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