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    chn 442

    Abstract: chn 437 chn 439 chn 436 lz smd marking
    Text: MICRON TE CHN OLOGY INC 3.7E- D • blllSMi 0001530 *} MICRON ■ MT5C6408 8830 t|CHt*MCtV MC MILITARY SRAM 8K X 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • SMD 5962-85525, -89691 • JAN M38510/292 « RAD-tolerant (consult factory)


    OCR Scan     		PDF MT5C6408 M38510/292 28L/300 32L/LCC C-12A) MIL-STD-883 chn 442 chn 437 chn 439 chn 436 lz smd marking

    smd transistor marking A13C

    Abstract: smd transistor A6t 12 smd transistor A6t A6T TRANSISTOR A6t smd a6t smd transistor smd transistor wc smd transistor A6t 50 C17E smd transistor wc dc
    Text: MICRON TECHNOLOGY INC 17E J> • blllSMT 0001ÖS2 5 MICRON MT5C6404 883C MILITARY SRAM 16K X 4 SRAM 'T - M W - Z V i o AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86859, -89629 • JAN (consult factory for reference number)


    OCR Scan     		PDF MT5C6404 22L/300 MIL-STD-883 smd transistor marking A13C smd transistor A6t 12 smd transistor A6t A6T TRANSISTOR A6t smd a6t smd transistor smd transistor wc smd transistor A6t 50 C17E smd transistor wc dc

    smd transistor A6t

    Abstract: A4U marking transistor A6t smd Transistor A6T TRANSISTOR smd transistor A4U smd transistor A6t 14 SMD TRANSISTOR MARKING A1 T46 smd transistor A6t 50 transistor A6t 45 smd transistor marking a7*c
    Text: 1?E D MICRON TECHNOLOGY INC b l l l S 1^ MICRON « OOOiaiH b MT5C6401 883C HlhN-XCV'.V ISC MILITARY SRAM 64Kx1 SRAM -OS AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86105 • JAN M38510/292 « RAD-tolerance (consult factory)


    OCR Scan     		PDF MT5C6401 M38510/292 64Kx1 22L/300 T-46-23-r05 MIL-STD-883 smd transistor A6t A4U marking transistor A6t smd Transistor A6T TRANSISTOR smd transistor A4U smd transistor A6t 14 SMD TRANSISTOR MARKING A1 T46 smd transistor A6t 50 transistor A6t 45 smd transistor marking a7*c

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC 17E5 • tÌlÌS4"Ì 0001630 4 ■ MICRON i ■ MT5C6405 883C I d h i r t ' l . ' B*- 16K x 4 SRAM MILITARY SRAM WITH OUTPUT ENABLE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD (consult factory for reference number)


    OCR Scan     		PDF MT5C6405 24L/300 T-46-23-10 MIL-STD-883

    JMicron

    Abstract: No abstract text available
    Text: MICRON S E M I C O N D U C T O R INC b?E D WÊ b 1 1 1 5 4 T DDG'îETB 77G H I M R N MICRON B 16K SK.'i'ONOUCTOR l'JC MT5C6405 X 4 SRAM 16K x 4 SRAM SRAM FEATURES • High speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • High-performance, low-power, CMOS double-metal


    OCR Scan     		PDF MT5C6405 24-Pin MTSC6405 JMicron

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC S5E D • blllSHT GG0334G 7bl ■ MRN piCZRON 64K MT5C6401 X 1 SRAM - 'T 4 C 7 - 2 .V O S T SRAM 64K X 1 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply


    OCR Scan     		PDF GG0334G MT5C6401 22-Pin 000334b

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC c SSE ]> blllSM'ì GOOSbQS 1^4 B U R N MT5C6404 883C 16K X 4 SRAM IC Z R Q N 16K X 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86859, -89692 • MIL-STD-883, Class B • Radiation tolerant (consult factory)


    OCR Scan     		PDF MT5C6404 MIL-STD-883, 22-Pin MIL-STD-883

    AAA1M304

    Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
    Text: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188


    OCR Scan     		PDF CY7C106 CY7C185 AS7C1028 AS7C164 AS7C259 AS7C256 AS7C1024 AAA1M304 tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A

    Untitled

    Abstract: No abstract text available
    Text: IT/AT/XT SPECIFICATION 64K SRAM FAMILY MICRON ABSOLUTE MAXIMUM RATINGS* ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-40°C < TA < 85°C; -40°C < TA < 125°C; -55°C < TA < 125°C; Vcc = 5V ±10% DESCRIPTION CONDITIONS SYMBOL MIN


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC 55E ] |v/ i i c : i = i o n SRAM • blllSHT 0003308 b 3 T * M R N MT5C6405 16K X 4 SRAM ' l - ' M L ' 77.-1 O 16K x 4 SRAM FEATURES • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process


    OCR Scan     		PDF MT5C6405 24-Pin GDD331S T5C6405 MT5C640S

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    5C6408

    Abstract: 1293-D
    Text: OBSOLETE 8/31/94 MICRON I MT5C6408 8K x 8 SRAM SEMICONDUCTOR, INC. SRAM 8K x 8 SRAM FEATURES PIN ASSIGNMENT Top View • H igh speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • H igh-perform ance, low -pow er, CM OS double-m etal process • Single +5V +10% pow er supply


    OCR Scan     		PDF MT5C6408 28-Pin 5C6408 1293-D

    aa ssr hen ev

    Abstract: 1293-D 5C6401
    Text: OBSOLETE 8/31/94 MICRON I MT5C6401 64K x 1 SRAM SEMICONDUCTOR, INC. SRAM 64K x 1 SRAM FEATURES PIN ASSIGNMENT Top View • H igh speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • H igh-perform ance, low -pow er, CM OS double-m etal process • Single +5V +10% pow er supply


    OCR Scan     		PDF MT5C6401 22-Pin Ext260 aa ssr hen ev 1293-D 5C6401

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE ]> • b l l l S M T GQQSb4S Ö7Ü « f l R N MT5C6408 883C 8K X 8 SRAM I^ IC R Ü N . *—T"- Li i_-7 1 _1 " MILITARY SRAM 8K X 8 SRAM • • • • PIN ASSIGNMENT Top View) SMD 5962-38294, Class M JAN 5962-38294, Class B


    OCR Scan     		PDF MT5C6408 MIL-STD-883, 28-Pin C-11A) MIL-STD-883 T5C6409883C

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC L7E » • 000^340 IOS ■ MT5C6408 8K X 8 SRAM l^ iic n o N SRAM 8K X 8 SRAM • High speed: 9 ,1 0 ,1 2 ,1 5 ,2 0 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V +10% power supply • Easy memory expansion with CE1, CE2 and OE


    OCR Scan     		PDF MT5C6408 28-Pin b11154T

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE ]> b i l l 5 4 e! 0 0 0 3 3 0 0 |v iia = O N 16K SRAM 34Ö MT5C6404 X 4 SRAM 16K X 4 SRAM • High speed: 8’, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option


    OCR Scan     		PDF MT5C6404 22-Pin 000330b

    micron MT5C640

    Abstract: No abstract text available
    Text: MICRON T E C H N O L O G Y M I C R O INC S5E D billig ÜODSSfll TEO • URN MT5C6401 883C 64K X 1 SRAM N MILITARY SRAM 64K X 1 SRAM PIN A SSIG N M E N T Top View SMD 5962-86015 JAN M38510,292 MIL-STD-883, Class B Radiation tolerant (consult factory) 22-Pin DIP


    OCR Scan     		PDF MT5C6401 M38510 MIL-STD-883, 22-Pin MIL-STD-883 micron MT5C640

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC 3flE » ».»m u • b ill 5 ^ -Ü ' ? "Al LI QDOSRST O BiflRN '¿ 'i U Ü S REPLACES; MT66C3216 16Kx 32 SRAM SRAM MODULE FEATURES PIN ASSIGNMENT (Top View) High speed: 15ns, 20ns, 25ns, 30ns, 35ns and 45ns High-performance, low-power, CMOS process


    OCR Scan     		PDF MT66C3216) 64-Pin MT85C3216) HT85C3216)

    Untitled

    Abstract: No abstract text available
    Text: MICRON T E C H N O L O G Y INC SSE D • blllSMT □ 77T ■ URN MT8S1632 16K X 32 SRAM MODULE M IC R O N SRAM MODULE 16Kx 32 SRAM FEATURES • High speed: 10*, 15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process _ • Single +5V ±10% power supply


    OCR Scan     		PDF MT8S1632 64-Pin MTBS1632

    MT5C6408

    Abstract: No abstract text available
    Text: AUSTIN S E M I C O N D U C T O R INC bOE ]> • T Ü U E 1 1 ? Ü D D D 3 0 2 ASM H A U S T MT5C6408 DIE 8K X 8 SRAM MICRON T - 4 b - 2 .S - ß _ MILITARY SRAM DIE 8K X 8 SRAM FEATURES • High speed: 1 2 ,15,20,25 and 35ns • High-performance, low-power, CMOS double-metal


    OCR Scan     		PDF MT5C6408

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEM ICONDUCTOR INC b?E D • blllSHT OOG'ìbHS 720 B U R N I^IIC R O N 16K SRAM MODULE X MT8S1632 32 SRAM MODULE 16Kx 32 SRAM FEATURES • High speed: 10*, 15,20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply


    OCR Scan     		PDF MT8S1632 64-Pin MTSS1632

    5C6401

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b?E D • b!1154T DDDTBlfl flflfi B M R N unCRCHSI c^ MT,5g640l 64K X 1 SRAM SRAM 64K X 1 SRAM PIN ASSIGNMENT Top View • High speed: 9,10,1 2 ,1 5 , 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V +10% pow er supply


    OCR Scan     		PDF 1154T 5g640l 22-Pin MT5C6401 MT3CM01 5C6401

    BTM marking

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC M • b7E » b i l l SH <3 []DDR2[,4 7bfi BIMRN IC R O N ,. 16K “ T,5 “ X « 4 SRAM 16K X 4 SRAM SRAM • High speed: 9 ,1 0 ,1 2 ,1 5 , 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply


    OCR Scan     		PDF 22-Pin MT5C6404 BTM marking