Micron Technology
Abstract: No abstract text available
Text: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and
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20Note/DRAM/TN4102
TN-41-04:
TN-41-13:
TN-46-02:
TN-46-06:
TN-46-11:
TN-46-14:
TN-47-19:
TN-47-20:
Micron Technology
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Untitled
Abstract: No abstract text available
Text: Micron Confidential and Proprietary Advance‡ 256MB, 512MB, 1GB x64, DR : 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT8HSF3264HD – 256MB MT8HSF6464HD – 512MB MT8HSF12864HD – 1GB For component data sheets, refer to Micron’s Web site: www.micron.com/ddr2
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256MB,
512MB,
200-Pin
MT8HSF3264HD
256MB
MT8HSF6464HD
512MB
MT8HSF12864HD
200-pin,
PC2-3200,
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IDT ZBT SRAM 1994
Abstract: samsung 10K filing SEC semico 2000F PC2100 general architecture of ddr sdram PC133 registered reference design MT28S4M16 DDR SDRAM Component Micron technology micron dram code
Text: B u y e r s Volume 7, Issue 4 Product and service news for Micron customers 4Q00 MBN Extra: Micron Unveils New Corporate Brand “Micron Buyers News Extra” is your opportunity to hear from Micron’s management team This newsletter contains forwardlooking statements regarding the company and the industry. These particular
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Abstract: No abstract text available
Text: ADVANCE‡ MICRON CONFIDENTIAL AND PROPRIETARY 128MB, 256MB x64 200-PIN DDR SODIMM SMALL-OUTLINE DDR SDRAM MODULE MT8VDDT1664H – 128MB MT8VDDT3264H – 256MB For the latest data sheet, please refer to the Micronâ Web site: www.micron.com/moduleds Figure 1: 200-Pin SODIMM (MO-224)
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128MB,
256MB
200-PIN
200-pin,
PC1600,
PC2100,
PC2700
333MT/s
128MB
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pic 8259
Abstract: sus_stat_n rtc backup battery circuit 2h48
Text: PRELIMINARY‡ MT8LLN22NCNE COPPERTAIL 21PAD/22NCN Chipset Overview MT8LLN22NCNE Peripheral Bus Controller For the latest data sheet please refer to the Micron Web site: www.micron.com/chipset. GENERAL DESCRIPTION The Micron 21PAD/22NCN chipset consists of two
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MT8LLN22NCNE
21PAD/22NCN
21PAD
22NCN
512KB
64-bit,
pic 8259
sus_stat_n
rtc backup battery circuit
2h48
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MT4LSDT1664HI133
Abstract: MT48LC16M32 MT4LSDT1664HI MT8LSDT6464HI-133 MEG32 MT48LC8M32 MT48LC4M32B2F5 MT48LC4M32LFF5 MT46V64M8FN MT8LSDT6464HI
Text: Industrial Temperature DRAM Micron’s Industrial Temperature DRAM For Ultimate Performance Under Extreme Conditions For products operating at temperatures ranging from -40°C to +85°C, Micron Technology’s extensive line of industrial temperature IT DRAM provides
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TN-47-07
Abstract: Micron TN-47-01 DDR2-533 TN-47-01
Text: TN-47-07: DDR2 Simulation Support Introduction Technical Note DDR2 Simulation Support Introduction Micron provides extensive design support tools for system designers. For example, Micron’s recently released technical note “DDR2-533 Memory Design Guide for TwoDIMM Unbuffered Systems,” TN-47-01 enables board designers to develop a set of
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TN-47-07:
DDR2-533
TN-47-01)
09005aef812507c7
TN4707
TN-47-07
Micron TN-47-01
TN-47-01
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micron ddr3
Abstract: NANYA 42Nm nanya ddr3 42-NANOMETER x1008
Text: FOR IMMEDIATE RELEASE Contacts: Kirstin Bordner Micron Technology, Inc. 208 368-5487 Dr. Pei Lin Pai Nanya Technology Corporation 886-3-3281688 x1008 kbordner@micron.com plpai@ntc.com.tw MICRON, NANYA UNVEIL 42-NANOMETER DRAM PROCESS TECHNOLOGY – REDUCES MEMORY POWER CONSUMPTION, INCREASES PERFORMANCE
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x1008
42-NANOMETER
micron ddr3
NANYA
42Nm
nanya ddr3
x1008
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MTFC4GACAANA-4M IT
Abstract: MTFC4GACAANA MTFC8GACAANA-4M IT micron marking code information MTFC8GLDDQ-4M IT MTFC4GAC MTFC4GACA JESD84-B451 4gb nand flash MTFC4G MTFC4GACAANA-4M
Text: Preliminary‡ Micron Confidential and Proprietary 4GB, 8GB: e•MMC Features e·MMC Memory MTFC4GACAANA-4M IT, MTFC8GACAANA-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash • 100-ball TBGA (RoHS compliant, "green" package)
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100-ball
51-compliant
84-B451)
11-signal
09005aef856fbc21
ps8210
MTFC4GACAANA-4M IT
MTFC4GACAANA
MTFC8GACAANA-4M IT
micron marking code information MTFC8GLDDQ-4M IT
MTFC4GAC
MTFC4GACA
JESD84-B451
4gb nand flash
MTFC4G
MTFC4GACAANA-4M
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N2B3
Abstract: No abstract text available
Text: 2Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT41J256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 2Gb TwinDie DDR3 SDRAM uses Micron’s 1Gb
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MT41J512M4
MT41J256M8
78-ball
09005aef82fcca5a/Source:
09005aef82ed0bfa
MT41J512M4
N2B3
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MT41J512M8
Abstract: "2Gb DDR3 SDRAM" MT41J256M8 MT41J1G4 srt 8n 2Gb DDR3 SDRAM twindie MT41J512 DDR3-1066 DDR3-1333 MT41J512M4
Text: 4Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT41J512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 4Gb TwinDie DDR3 SDRAM uses Micron’s 2Gb
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MT41J1G4
MT41J512M8
MT41J512M4
MT41J1G4;
MT41J256M8
correla-3900
09005aef83188bab/Source:
09005aef83169de6
MT41J1G4
MT41J512M8
"2Gb DDR3 SDRAM"
srt 8n
2Gb DDR3 SDRAM twindie
MT41J512
DDR3-1066
DDR3-1333
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MT41J256M8
Abstract: 2Gb DDR3 SDRAM twindie MT41J512M4 srt 8n MT41J256m8 fbga MT41J256M4 "DDR3 SDRAM" DDR3-1066 DDR3-1333 MT41J128M8
Text: 2Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT41J256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 2Gb TwinDie DDR3 SDRAM uses Micron’s 1Gb
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MT41J512M4
MT41J256M8
MT41J256M4
MT41J512M4;
MT41J128M8
m3900
09005aef82fcca5a/Source:
09005aef82ed0bfa
MT41J512M4
MT41J256M8
2Gb DDR3 SDRAM twindie
srt 8n
MT41J256m8 fbga
"DDR3 SDRAM"
DDR3-1066
DDR3-1333
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MT47H32M16
Abstract: micron marking MT47H FBGA 320 DDR2 16 meg x16 micron FBGA SDRAM marking micron ddr2 FBGA 84 32M16 Micron 32M16
Text: Micron Confidential and Proprietary 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks For functional and parametric specifications, refer to the product data sheet on Micron’s Web site: www.micron.com
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512Mb:
MT47H128M4
MT47H64M8
MT47H32M16
84-ball
60-ball
DDR2-400)
DDR2-533)
DDR2-667)
09005aef81ce6bd7,
MT47H32M16
micron marking
MT47H
FBGA 320
DDR2 16 meg x16
micron FBGA SDRAM
marking micron ddr2
FBGA 84
32M16
Micron 32M16
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Untitled
Abstract: No abstract text available
Text: ADVANCE 128Mb: x4, x8, x16 DDR SDRAM MICRON' I TECHNOLOGY, INC. MT46V32M4 - 8 Meg x 4 x 4 banks MT46V16M8 - 4 Meg x 8 x 4 banks M T46V8M 16 - 2 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html
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128Mb:
MT46V32M4
MT46V16M8
T46V8M
66-PIN
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toshiba tc110g
Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective
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Untitled
Abstract: No abstract text available
Text: ADVANCE 64Mb: x32 DDR SDRAM MICRON' I TECHNOLOGY, INC. DOUBLE DATA RATE SDRAM MT46V2M32 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Internal, pipelined double data rate DDR architec
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MT46V2M32
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Untitled
Abstract: No abstract text available
Text: ADVANCE 512K x 32 DDR SGRAM MICRON I TECHNOLOGY, INC. MT45V512K32 - 128K x 32 x 4 banks DOUBLE DATA RATE SGRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Internal, pipelined double data rate DDR architec
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MT45V512K32
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Untitled
Abstract: No abstract text available
Text: 4’8 MEGx32 MICRON* I SDRAM DIMMs TECHNOLOGY, INC. MT2LSDT432U, MT4LSDT832UD SYNCHRONOUS DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View
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MT2LSDT432U,
MT4LSDT832UD
100-pin,
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Untitled
Abstract: No abstract text available
Text: ADVANCE 64 MEG: x8 DDR SDRAM MICRON I TECHNOLOGY, INC. MT46LC8M8 - 2 Meg x 8 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Internal, pipelined double data rate DDR architec
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MT46LC8M8
66-PIN
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footprint jedec MS-026 LQFP
Abstract: footprint jedec MS-026 TQFP JEDEC MS-026 footprint footprint jedec MS-026 LQFP 64 pin
Text: PRELIMINARY M IC R O N ’ I 512K x 32 DDR SGRAM TECHNOLOGY, INC. MT45V512K32 - 128K x 32 x 4 banks DOUBLE DATA RATE SGRAM For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html FEATURES PIN ASSIGNMENT Top View
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MT45V512K32
footprint jedec MS-026 LQFP
footprint jedec MS-026 TQFP
JEDEC MS-026 footprint
footprint jedec MS-026 LQFP 64 pin
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON 16 M EGx72 • DDR REGISTERED SDRAM DIMM MT18LDDT1672 DDR SDRAM DIMM MODULE F or the latest full-length data sheet, please refer to the Micron Web site: www.m icron.com /m ti/m sp/htm l/ datasheet.htm l FEATURES • • • • 184-pin dual in-line memory module DIMM
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MT18LDDT1672
184-pin
128MB
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON 32 M EGx72 • REGISTERED SDRAM DIMM MT36LSDT3272 SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet, html PIN ASSIGNMENT Front View 168-Pin DIMM FEATURES
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MT36LSDT3272
168-pin,
256MB
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON 64 M EGx72 • REGISTERED SDRAM DIMM MT36LSDT6472 SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet, html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM
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168-pin,
512MB
096-c
2/99a
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5Bp smd transistor data
Abstract: 5Bp smd TRANSISTOR SMD 2X y CK 158 SMD WL18 TRANSISTOR SMD 2X K 100CLCC cmos based on tanner tools operation of sr latch using nor gates TRANSISTOR SMD 2X 7
Text: Order this data sheet by HDCM IL/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Military HDC Series HDC Series CMOS Arrays High Performance Triple Layer Metal 1.0 Micron CMOS Arrays Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a
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