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    M513

    Abstract: MASWSS0065 MASWSS0199 MASWSS0199SMB MASWSS0199TR-3000
    Text: MASWSS0199 GaAs SP3T 2.6 V CDMA-GPS Switch DC - 2.5 GHz Features GND 39 pF Pin 12 ANT Functional Schematic Unbalanced asymmetric RF Paths Low Cross Modulation Low Insertion Loss: 0.5 dB at 1.0 GHz High Isolation: 20 dB at 2.0 GHz 0.5 micron GaAs PHEMT Process


    Original     		PDF MASWSS0199 12-lead MASWSS0065 MASWSS0199 M513 MASWSS0065 MASWSS0199SMB MASWSS0199TR-3000

    M513

    Abstract: MASWSS0065 MASWSS0199 MASWSS0199SMB MASWSS0199TR-3000
    Text: RoHS Compliant GaAs SP3T 2.6 V CDMA-GPS Switch DC - 2.5 GHz Features GND 39 pF Pin 12 ANT Functional Schematic Unbalanced asymmetric RF Paths Low Cross Modulation Low Insertion Loss: 0.5 dB at 1.0 GHz High Isolation: 20 dB at 2.0 GHz 0.5 micron GaAs PHEMT Process


    Original     		PDF 12-lead MASWSS0065 MASWSS0199 MASWSS0199 M513 MASWSS0065 MASWSS0199SMB MASWSS0199TR-3000

    M513

    Abstract: MASWSS0191 MASWSS0191SMB MASWSS0191TR-3000
    Text: MASWSS0191 GaAs SP3T 2.6 V CDMA-GPS Switch 0.5 - 3.0 GHz Rev. V1 Features • • • • • • • • • Optimized RF Paths Low Cross Modulation Low Insertion Loss: 0.7 dB at 820 MHz Cell High Isolation: 21.5 dB at 1.9 GHz (PCS) 0.5 micron GaAs PHEMT Process


    Original     		PDF MASWSS0191 MASWSS0191 M513 MASWSS0191SMB MASWSS0191TR-3000

    M513

    Abstract: MASWSS0060 MASWSS0060SMB MASWSS0060TR MASWSS0060TR-3000
    Text: GaAs SP3T 2.7 V CDMA-GPS Switch DC - 2.5 GHz GND Pin 12 100 pF Balanced symmetrical RF Ports Low Cross Modulation Low Insertion Loss: 0.55 dB at 1 GHz High Isolation: 21 dB at 2 GHz Miniature Package: 3 mm 12-Lead PQFN 0.5 micron GaAs PHEMT Process ANT •


    Original     		PDF 12-Lead MASWSS0060 M513 MASWSS0060 MASWSS0060SMB MASWSS0060TR MASWSS0060TR-3000

    MASWSS0065SMB

    Abstract: MASWSS0065TR-3000 M513 MASWSS0065
    Text: MASWSS0065 GaAs SP3T 2.6 V CDMA-GPS Switch DC - 2.5 GHz Features GND Pin 12 39 pF Unbalanced asymmetric RF Paths Low Cross Modulation Low Insertion Loss: 0.5 dB at 1.0 GHz High Isolation: 20 dB at 2.0 GHz 3 mm 12-lead PQFN Package 0.5 micron GaAs PHEMT Process


    Original     		PDF MASWSS0065 12-lead MASWSS0065 MASWSS0065SMB MASWSS0065TR-3000 M513

    M513

    Abstract: MASWSS0060 MASWSS0200 MASWSS0200SMB MASWSS0200TR-3000
    Text: MASWSS0200 GaAs SP3T 2.7 V CDMA-GPS Switch DC - 2.5 GHz GND ANT Pin 12 GND Balanced symmetrical RF Ports Low Cross Modulation Low Insertion Loss: 0.55 dB at 1 GHz High Isolation: 21 dB at 2 GHz 0.5 micron GaAs PHEMT Process Lead-Free 3 mm 12-Lead PQFN Package


    Original     		PDF MASWSS0200 12-Lead MASWSS0060 M513 MASWSS0060 MASWSS0200 MASWSS0200SMB MASWSS0200TR-3000

    M513

    Abstract: MASWSS0060 MASWSS0060SMB MASWSS0060TR MASWSS0060TR-3000
    Text: MASWSS0060 GaAs SP3T 2.7 V CDMA-GPS Switch DC - 2.5 GHz GND ANT Pin 12 GND Balanced symmetrical RF Ports Low Cross Modulation Low Insertion Loss: 0.55 dB at 1 GHz High Isolation: 21 dB at 2 GHz Miniature Package: 3 mm 12-Lead PQFN 0.5 micron GaAs PHEMT Process


    Original     		PDF MASWSS0060 12-Lead M513 MASWSS0060 MASWSS0060SMB MASWSS0060TR MASWSS0060TR-3000

    M513

    Abstract: MASWSS0191 MASWSS0191SMB MASWSS0191TR-3000 MASWSS01
    Text: RoHS Compliant GaAs SP3T 2.6 V CDMA-GPS Switch 0.5 - 3.0 GHz MASWSS0191 V1 Features • • • • • • • • • Optimized RF Paths Low Cross Modulation Low Insertion Loss: 0.7 dB at 820 MHz Cell High Isolation: 21.5 dB at 1.9 GHz (PCS) 0.5 micron GaAs PHEMT Process


    Original     		PDF MASWSS0191 MASWSS0191 M513 MASWSS0191SMB MASWSS0191TR-3000 MASWSS01

    Untitled

    Abstract: No abstract text available
    Text: GaAs SP3T 2.6 V CDMA-GPS Switch DC - 2.5 GHz Features GND 39 pF Pin 12 ANT Functional Schematic Unbalanced asymmetric RF Paths Low Cross Modulation Low Insertion Loss: 0.5 dB at 1.0 GHz High Isolation: 20 dB at 2.0 GHz 3 mm FQFP-N 12-lead Package 0.5 micron GaAs PHEMT Process


    Original     		PDF MASWSS0065 12-lead MASWSS0065

    M513

    Abstract: MASWSS0065 MASWSS0065SMB MASWSS0065TR-3000
    Text: GaAs SP3T 2.6 V CDMA-GPS Switch DC - 2.5 GHz Features GND 39 pF Pin 12 ANT Functional Schematic Unbalanced asymmetric RF Paths Low Cross Modulation Low Insertion Loss: 0.5 dB at 1.0 GHz High Isolation: 20 dB at 2.0 GHz 3 mm 12-lead PQFN Package 0.5 micron GaAs PHEMT Process


    Original     		PDF 12-lead MASWSS0065 M513 MASWSS0065SMB MASWSS0065TR-3000

    UM62256EM-70LL

    Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
    Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL PD43256BGW-70 PD441000L-B PD442000L-B UM62256EM-70LL UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723

    um61256

    Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
    Text: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245

    um61256

    Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
    Text: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16

    um61256

    Abstract: PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620
    Text: Cross Reference Your Memory Supplier part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 um61256 PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    AAA1M304

    Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
    Text: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188


    OCR Scan     		PDF CY7C106 CY7C185 AS7C1028 AS7C164 AS7C259 AS7C256 AS7C1024 AAA1M304 tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


    OCR Scan     		PDF LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256

    nec 424256

    Abstract: nec 424100 511000 424256 424256 nec KM41C1000 NEC 421000 m5m44c256 S4C1024 514256
    Text: SIEM EN S Cross reference Memory Components 1 Mx1 256 K SIE M E N S HYB 511000 HYB 514256 HYB 514100 TO SHIBA TC 511000 TC 514256 TC 514100 HITACHI HM 511000 HM 514256 HM 514100 NEC jiP D 421000 XPD 424256 (XPD 424100 M ITSUBISHI M5M4C1000 M5M44C256 M5M514000


    OCR Scan     		PDF M5M4C1000 MSM511000 MB81C1000 KM41C1000 MT4C1024 S4C1024 M5M44C256 MB81C4256 KM44C256 MT4C4256 nec 424256 nec 424100 511000 424256 424256 nec NEC 421000 514256

    AM7204

    Abstract: IC Works cross DALLAS cross reference CY7C408
    Text: FIFO Cross Reference FIFO CROSS REFERENCE ORGANIZATIONAL STRUCTURE COMPETITIVE VENDOR SHARP MODEL ' Cypress [ CY7C408 AMD i CY7C409 _ Cypress ACCESS TIME SHARP PACKAGE OPTIONS 35/25/15 MHz -h - Cypress LH5496/96H COMPETITIVE MODEL 35/25/15 MHz Am7201 DIP/PLCC


    OCR Scan     		PDF LH5496/96H CY7C408 CY7C409 Am7201 CY7C420 CY7C421 DS2009 LH540202 LH5497/97H CY7C424 AM7204 IC Works cross DALLAS cross reference

    organizational structure samsung

    Abstract: CYPRESS SAMSUNG CROSS REFERENCE DALLAS cross reference VITELIC MK4501 ic cross reference book CY7C408 mosel KM75C02
    Text: FIFO Cross Reference FIFO CROSS REFERENCE ORGANIZATIONAL STRUCTURE SHARP MODEL * COMPETITIVE VENDOR 256 X 36 X 2 LH5420 LH5481 64 X 8 64 X 9 LH5491 4,096 X 9 4,096 X 9 4,096 X 9 1,024 X 9 2,048 X 9 X LH5493 LH5494 LH5496/96H 512 X 9 4.096 LH5492 9 LH5497/97H


    OCR Scan     		PDF LH5420 MS76542 NMF256X36X2 CY7C408 NMF64X8 CY7C409 NMF64X9 MS76492 NMFC5492 MS76493 organizational structure samsung CYPRESS SAMSUNG CROSS REFERENCE DALLAS cross reference VITELIC MK4501 ic cross reference book mosel KM75C02

    STATIC RAM 8464

    Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
    Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)


    OCR Scan     		PDF L7C167 L7C168 L7C170 L7C171 L7C172 L6116/ L6116L L7C183 CY7C183 L7C184 STATIC RAM 8464 IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram

    Untitled

    Abstract: No abstract text available
    Text: Hermetic Connectors D*H - D Subminiature MIL-C-24308 D*H hermetically sealed connectors are designed to meet environmental conditions of extreme pressure differential. These connectors are part of the ITT Cannon D Subminiature series and are qualified to MIL-C-24308 see below for cross reference in­


    OCR Scan     		PDF MIL-C-24308 TBFH-100 TBFH-110