MI31T
Abstract: MI31TA MIB31TA
Text: MI31TA CRO DESCRIPTION MI31T & MIB31TA are GaAlAs infrared emitting diode molded in 3.2mm diameter clear transparent lens. r 5.3 0 .21 INFRARED EMITTING DIODE 03.15 (0.124) -N\ % 1.0(0 ,04)-f 0.75(0.03) max. • • • All dimension .in mm(inch) No Scale
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MI31TA
MI31T
MIB31TA
150mW
MI31T
MI31TA
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MIB31TA-2
Abstract: No abstract text available
Text: CRO MIB31TA-2 INFRARED EMITTING DIODE DESCRIPTION MIB31TA-2 is GaAiAs infrared emitting diode molded in T-l standard 3mm diameter clear transparent lens. • All Dimension io mm inch • NO Scale • Toi : + / - 0.3mm ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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MIB31TA-2
MIB31TA-2
100mA
200mW
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MIB31T
Abstract: No abstract text available
Text: MIB31T INFRARED EMITTING DIODE DESCRIPTION M1B31T is GaAlAs infrared emitting diode molded in T-l standard 3 mm diameter clear transparent lens. • All Dimension in mm inch NOScale Toi : + / - n i mm ABSOLUTE MAXIMUM RATINGS ( Ira=25°C) 100mA Forward Current (Continuous)
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MIB31T
100mA
200mW
10\isy
-20mA
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MIB31T
Abstract: No abstract text available
Text: CRO MIB31T INFRARED EMITTING DIODE DESCRIPTION M1B31T is GaAlAs infrared emitting diode molded in T-l standard 3mm diameter clear transparent lens. • NO Scale • Toi : + / - 0.3mm ABSOLUTE MAXIMUM RATINGS Ta=25°C Forward Current (Continuous) Pulse Forward Current
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MIB31T
MIB31T
100mA
200mW
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770nm
Abstract: No abstract text available
Text: UKU INFRARED EMITTING DIODE DESCRIPTION MIB31TA-2 is GaAiAs infrared emitting diode molded in T-l standard 3mm diameter clear transparent lens. • NO Scale • Toi : + / - 0.3mm ABSOLUTE MAXIMUM RATINGS Ta=25°C 100mA Forward Current (Continuous) Pulse Forward Current
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M1B31TA-2
100mA
200mW
Ocf-98
770nm
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MI31T
Abstract: MI31TA MIB31TA Diode BAY 45
Text: MI31T MI31TA CRO INFRARED EMITTING DIODE DESCRIPTION ML31T & MIB31TA are GaAlAs infrared emitting diode molded in 3.2mm diameter clear transparent lens. 03.15 0.124 r 5.3 ( . ) 0 21 1.0(0 % ,04)-f -N\ 0.75(0.03) max. • • • A ll dim ension .in mm(inch)
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MI31T
MI31TA
ML31T
MIB31TA
150mW
Diode BAY 45
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G321
Abstract: MIB31TA-2 004H
Text: MIB31TA-2 INFRARED EMITTING DIODE 03.15 " 0.124 DESCRIPTION f MIB31TA-2 is GaAlAs infrared emitting diode molded in T-l standard 3mm diameter clear transparent lens. 5.3 (0 .21) 1.0(0.04)-'' 0.75(0.03) max. mm. 0.5 -Cathode (0.02) ' 1.5(0.06) -2.54(0.1) • All Dimension in mm (inch)
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MIB31TA-2
100mA
200mW
4351G
Oet-90
G321
004H
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MEL78
Abstract: MIB31T
Text: IVI I KU NPN SILICON PHOTO TRANSISTOR DESCRIPTION M EL78 is NPN silicon planar photo transistor. It features illumination sensitivity, ultra fast high 03.15 0.124 response time. All dimension in mm(inch) No Scale Toi. : +/-0.3mm 5.3 M EL78 is spectrally and mechanically
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MEL78
MIB31T.
100pA
100/iA
MIB31T
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MEL78
Abstract: MI31T MIB31T
Text: MEL78 NPN SILICON PHOTO TRANSISTOR D E S C R IPT IO N MEL78 is NPN silicon planar phototransistor. It features illumination sensitivity, ultra high 03.15 0.124 fast response time. MEL78 is spectrally and mechanically 5.3 All dimension in mm(tnch) No Scale
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MEL78
MI31T
MIB31T.
MIB31T
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