MHZ PNP TRANSISTOR Search Results

MHZ PNP TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MHZ PNP TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Quad Low-Noise NPN / PNP Transistor Array T H AT Corporation THAT140 FEATURES APPLICATIONS • Two Matched NPN Transistors Two Matched PNP Transistors · Monolithic Construction · Low Noise — 0.75 nV/ Hz PNP — 0.8 nV/ Hz (NPN) · High Speed — ft= 350 MHz (NPN)	Original	PDF	THAT140 THAT140
"PNP Transistor array" Abstract: pnp 8 transistor array dual matched PNP ST 2n3904 TRANSISTOR PNP "Microphone Preamplifiers" NPN Two monolithic transistors DIELECTRICALLY ISOLATED pin configuration NPN transistor 2n3906 pnp array 2N3904 Text: T H AT Corporation Quad Low-Noise NPN / PNP Transistor Array THAT140 FEATURES APPLICATIONS • Two Matched NPN Transistors Two Matched PNP Transistors · Monolithic Construction · Low Noise — 0.75 nV/ Hz PNP — 0.8 nV/ Hz (NPN) · High Speed — ft= 350 MHz (NPN)	Original	PDF	THAT140 THAT140 "PNP Transistor array" pnp 8 transistor array dual matched PNP ST 2n3904 TRANSISTOR PNP "Microphone Preamplifiers" NPN Two monolithic transistors DIELECTRICALLY ISOLATED pin configuration NPN transistor 2n3906 pnp array 2N3904
2STA1962 Abstract: 2STC5242 JESD97 Text: 2STA1962 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC5242 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a PNP transistor manufactured	Original	PDF	2STA1962 2STC5242 2STA1962 2STC5242 JESD97
2sta2121 Abstract: 2STC5949 JESD97 Text: 2STA2121 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -250 V ■ Complementary to 2STC5949 ■ Typical ft = 25 MHz ■ Fully characterized at 125 oC Application ■ Audio power amplifier TO-264 Description The device is a PNP transistor manufactured	Original	PDF	2STA2121 2STC5949 O-264 2sta2121 2STC5949 JESD97
Untitled Abstract: No abstract text available Text: Quad Low-Noise PNP Transistor Array T H AT Corporation THAT120 FEATURES APPLICATIONS • Four Matched PNP Transistors · Microphone Preamplifiers · Low noise — 0.75 · Tape Head Preamplifiers · High Speed — 325 MHz ft · Current Sources · Excellent Matching - 500 mV typ	Original	PDF	THAT120 THAT120
"PNP Transistor array" Abstract: "Microphone Preamplifiers" THAT120 Text: Quad Low-Noise PNP Transistor Array T H AT Corporation THAT120 FEATURES APPLICATIONS • Four Matched PNP Transistors · Microphone Preamplifiers · Low noise — 0.75 · Tape Head Preamplifiers · High Speed — 325 MHz ft · Current Sources · Excellent Matching - 500 mV typ	Original	PDF	THAT120 2N3906-class "PNP Transistor array" "Microphone Preamplifiers" THAT120
"PNP Transistor array" Abstract: "Microphone Preamplifiers" antilog amplifier THAT120 Text: T H AT Corporation Quad Low-Noise PNP Transistor Array THAT120 FEATURES APPLICATIONS • Four Matched PNP Transistors · Microphone Preamplifiers · Low noise — 0.75 · Tape Head Preamplifiers · High Speed — 325 MHz ft · Current Sources · Excellent Matching - 500 mV typ	Original	PDF	THAT120 2N3906-class "PNP Transistor array" "Microphone Preamplifiers" antilog amplifier THAT120
AF279 Abstract: tfk transistor germanium-pnp-mesa-hf-transistor AF279 transistor tfk 140 Germanium mesa AF 279 042PF Text: Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: V orstufen bis 900 MHz Applications: Pre stages up to 900 MHz Besondere Merkmale: Features: • Passivierte O berfläche • • Leistungsverstärkung 16 dB • Power gain 16 dB	OCR Scan	PDF
AF280 Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF Text: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:	OCR Scan	PDF
TFK U 111 B Abstract: 6 TFK 106 tfk 106 AF106 tfk 518 tfk u 111 TFK AF TFK 111 tfk 325 germanium-pnp-mesa-hf-transistor Text: Nicht für Neuentwicklungen Not for new developments AF 106 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 260 MHz Applications: Pre, m ixer and o scilla to r stages up to 260 MHz Besondere Merkmale:	OCR Scan	PDF	01mA- TFK U 111 B 6 TFK 106 tfk 106 AF106 tfk 518 tfk u 111 TFK AF TFK 111 tfk 325 germanium-pnp-mesa-hf-transistor
AF 109 R Abstract: AF109R af109 germanium-pnp-mesa-hf-transistor Text: ¡fi Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: G eregelte Vorstufen bis 260 MHz Applications: C ontrolled pre-stages up to 260 MHz Besondere Merkmale: Features: • Leistungsverstärkung 16,5 dB • Power gain 16.5 dB • Rauschmaß < 4 ,8 dB	OCR Scan	PDF	AF109R AF 109 R AF109R af109 germanium-pnp-mesa-hf-transistor
AF239 Abstract: germanium-pnp-mesa-hf-transistor Tfk 239 900 mhz oscillator AF 239 Text: * AF 239 S 'W Nicht für Neuentwicklungen Not for new developments 4W Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixer and o scilla to r stages up to 900 MHz	OCR Scan	PDF
AF239 Abstract: germanium-pnp-mesa-hf-transistor AF 239 Text: 'W Nicht für Neuentwicklungen Not for new developments AF 239 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixe r and o scilla to r stages up to 900 MHz	OCR Scan	PDF
transistor BF 506 Abstract: BF506 S45C 51785 to 92 z transistor f 506 z.2x Text: BF 506 Silizium-PNP-HF-Transistor Silicon PNP RF Transistor Anwendungen: Oszillator-, M isch- und ungeregelte Vorstufen bis 300 MHz Applications: O scillator- m ixer and u n controlled p re a m p lifie r stages up to 300 MHz Besondere Merkmale: Features: • Kleine R ückwirkungskapazität	OCR Scan	PDF

AFY16 Abstract: Germanium Transistor 71lb 21b22 Text: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.	OCR Scan	PDF	AFY16 AFY16 18A4DIN41876 Q60106 f-200 Germanium Transistor 71lb 21b22
CBC 557 C Abstract: CBC 557 AF139 1j 400 CBC 557 B TFK AF 72136 72136 p AF 139 germanium-pnp-hf-transistor Text: Germanium-PNP-HF-Transistor Germanium PNP RF Transistor Anwendungen: Vor-, Misch- und Oszillatorstufen bis 860 MHz Applications: Pre, mixer and oscillator stages up to 860 M Hz Besondere Merkmale: Features: • Leistungsverstärkung >9 dB • Pow er gain > 9 dB	OCR Scan	PDF
2N5415 Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >25@2.5/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) 1.3@2.5/.25	OCR Scan	PDF	O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5094 2N5149 2N5153 2N5415
2N3553 equivalent Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200 Text: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz	OCR Scan	PDF	MM4019 2N3553 MM4019/2N3553 ATC-200 2N3553 equivalent vk-200 ferrite choke vk200* FERROXCUBE VK-200 VK200 MM4019 ATC200
AFY42 Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B Text: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in	OCR Scan	PDF	AFY42 AFY42 60106-Y BIfi03 U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
TRANSISTOR SMD CODE PACKAGE SOT89 Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 4 SMD CODE SOT89 lc b3 smd transistor smd transistor code b3 BFQ149 smd transistor b3 BFQ14 10 GHz PNP transistor smd transistor HB Text: Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFQ149 PINNING PNP tra nsistor in a S O T89 envelope. It is intended for use in U HF a pplications such as broadband aerial am plifiers 30 to 860 MHz and in m icrow ave am plifiers such as radar	OCR Scan	PDF	BFQ149 -75mA; TRANSISTOR SMD CODE PACKAGE SOT89 TRANSISTOR SMD CODE PACKAGE SOT89 4 SMD CODE SOT89 lc b3 smd transistor smd transistor code b3 smd transistor b3 BFQ14 10 GHz PNP transistor smd transistor HB
pnp 8 transistor array Abstract: BD 104 NPN LA400 ARRAY resistor npn 8 transistor array transistor array pnp bD 106 transistor Text: AT&T Data Sheet ^ ss oo5i 52 Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval	OCR Scan	PDF	LA400 rev400 50AL203140 DS86-352LBC pnp 8 transistor array BD 104 NPN ARRAY resistor npn 8 transistor array transistor array pnp bD 106 transistor
BD 104 NPN Abstract: pnp 8 transistor array LA400 npn 8 transistor array BD+104+NPN Text: AT&T Data Sheet oo5i 52 ^ ss Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval	OCR Scan	PDF	LA400 50AL203140 DS86-352LBC BD 104 NPN pnp 8 transistor array npn 8 transistor array BD+104+NPN
Untitled Abstract: No abstract text available Text: lAiur Data Sheet Linear Array 005152 Benefits • High-frequency performance, typical fî of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design	OCR Scan	PDF	LA400 50AL203140 DS86-352LBC
AF239S Abstract: Germanium mesa Text: 11419771 AF239S MESA PNP UHF PREAMPLIFIER The AF 239S is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It is particularly designed as preamplifier, mixer and oscillator up to 900 MHz. ABSOLUTE MAXIMUM RATINGS V C ES VcEO ^E B O 'c P.o, Collector-em itter voltage VBE = 0	OCR Scan	PDF	AF239S AF239S Germanium mesa

MHZ PNP TRANSISTOR Search Results

MHZ PNP TRANSISTOR Result Highlights (5)

MHZ PNP TRANSISTOR Datasheets Context Search

Untitled

"PNP Transistor array"

2STA1962

2sta2121

Untitled

"PNP Transistor array"

"PNP Transistor array"

AF279

AF280

TFK U 111 B

AF 109 R

AF239

AF239

transistor BF 506

AFY16

CBC 557 C

2N5415

2N3553 equivalent

AFY42

TRANSISTOR SMD CODE PACKAGE SOT89

pnp 8 transistor array

BD 104 NPN

Untitled

AF239S